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    • 4. 发明公开
    • Process for forming a fine pattern
    • Verfahren zur Herstellung einer feinen Struktur。
    • EP0392236A1
    • 1990-10-17
    • EP90105610.1
    • 1990-03-24
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Hashimoto, KazuhikoKawakita, KenjiNomura, Noboru
    • G03F7/075
    • G03F7/0754Y10S430/168
    • A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I):
      where R₁, R₂, R₃ and R₄ are each hydrogen or an alkyl group,
      a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.
    • 一种用于形成精细图案的方法,包括以下步骤:在半导体衬底上形成有机聚合物膜,然后进行热处理,施加由通式(I)表示的环硅烷硅烷组成的抗蚀剂膜:其中R1,R2, R3和R4各自为氢或烷基,聚合物树脂和光酸产生剂,在有机聚合物膜上进行热处理,暴露于带电束,通过显影形成抗蚀剂图案,并蚀刻有机聚合物 同时使用抗蚀剂图案作为掩模。 根据本发明,可以高灵敏度地形成耐干蚀刻精确的精细抗蚀剂图案。