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1. 发明公开

EP2588650A1 SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS 审中-公开
标题翻译：选择性外延含Si材料和替代掺杂含Si的晶体材料
公开(公告)号：EP2588650A1
公开(公告)日：2013-05-08
申请号：EP11801264.0
申请日：2011-06-23
申请人： Matheson Tri-Gas, Inc. , International Business Machines Corporation
发明人： FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David , TORRES, Robert, Jr. , HE, Hong , REZNICEK, Alexander , ADAM, Thomas, N. , SADANA, Devendra, K.
IPC分类号： C30B25/02
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550°C and a pressure in the range of about 10 mTorr - 200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

2. 发明公开

EP1917682A2 MOBILITY ENHANCEMENT IN SiGe HETEROJUNCTION BIPOLAR TRANSISTORS 审中-公开
标题翻译： SiGe异质结双极晶体管的迁移率增强
公开(公告)号：EP1917682A2
公开(公告)日：2008-05-07
申请号：EP06813862.7
申请日：2006-08-25
申请人： International Business Machines Corporation
发明人： CHIDAMBARRAO, Dureseti , ADAM, Thomas, N.
IPC分类号： H01L29/00
CPC分类号： H01L29/7378 , H01L29/161 , H01L29/165
摘要： The present invention relates to a high performance heterojunction bipolar transistor (HBT) having abase region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 ran thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.
摘要翻译：本发明涉及一种高性能异质结双极晶体管（HBT），其具有在其中具有含SiGe层的基区。含锗硅层的厚度不超过约100nm，并具有预定的临界锗含量。含SiGe层进一步具有不低于预定临界锗含量的约80％的平均锗含量。本发明还涉及一种通过均匀地增加含SiGe基层的HBT来提高载流子迁移率的方法在基层中的锗含量使得其中的平均锗含量不小于基于基层厚度计算的临界锗含量的80％，条件是基层不超过100nm厚。

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