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1. 发明授权

EP2295619B1 Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults 有权
标题翻译：一种用于生产具有低缺陷密度和空位为主芯的硅的过程，是不含氧化诱导堆垛层错的基本上
公开(公告)号：EP2295619B1
公开(公告)日：2014-04-23
申请号：EP10177865.2
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21

2. 发明公开

EP2295619A1 Low Defect Density Silicon Having A Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults 有权
标题翻译：一种用于生产具有低缺陷密度和空位为主芯的硅的过程，是不含氧化诱导堆垛层错的基本上
公开(公告)号：EP2295619A1
公开(公告)日：2011-03-16
申请号：EP10177865.2
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750 DEG C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot.; the process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种用于制备单晶硅锭，以及到该锭或晶片从那里产生的过程。该工艺包括控制（I）的生长速度V，（ⅱ）平均轴向温度梯度，G，和（iii）从凝固晶体的冷却速率至约750℃，以引起的形成具有第一轴对称区从铸锭worin硅自 - 填隙原子的侧表面径向向内延伸的段是主要的本征点缺陷，以及第二轴对称区从第一和朝向锭的中心轴线沿径向向内延伸。 ; 该过程DASS V，G和冷却速率被控制以防止团聚本征点缺陷的在第一区域中的形成，而冷却速度进一步控制以限制氧化的诱导源自晶片的堆垛层错的形成该段，在将晶片经受另外适合用于寻找故障的形成的氧化处理。

3. 发明公开

EP1688519A3 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 审中-公开
标题翻译：硅低缺陷密度和CORE空位为主，即氧化诱导堆垛层错基本上不含
公开(公告)号：EP1688519A3
公开(公告)日：2007-10-17
申请号：EP06111930.1
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B15/00 , C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750°C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种用于制备单晶硅锭，以及到该锭或晶片从那里产生的过程。该工艺包括控制（I）的生长速度V，（ⅱ）平均轴向温度梯度，G，和（iii）从凝固晶体的冷却速率至约750℃，以引起的形成具有第一轴对称区从铸锭worin硅自 - 填隙原子的侧表面径向向内延伸的段是主要的本征点缺陷，以及第二轴对称区从第一和朝向锭的中心轴线沿径向向内延伸。该过程DASS V，G和冷却速率被控制以防止团聚本征点缺陷的在第一区域中的形成，而冷却速度进一步控制以限制氧化的诱导源自晶片的堆垛层错的形成该段，在将晶片经受另外适合用于寻找故障的形成的氧化处理。

4. 发明公开

EP1688519A2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 审中-公开
标题翻译：硅低缺陷密度和CORE空位为主，即氧化诱导堆垛层错基本上不含
公开(公告)号：EP1688519A2
公开(公告)日：2006-08-09
申请号：EP06111930.1
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B15/00 , C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750°C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.

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