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1. 发明授权

EP2295619B1 Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults 有权
标题翻译：一种用于生产具有低缺陷密度和空位为主芯的硅的过程，是不含氧化诱导堆垛层错的基本上
公开(公告)号：EP2295619B1
公开(公告)日：2014-04-23
申请号：EP10177865.2
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21

2. 发明公开

EP0892091A1 Graphite support vessels having a low concentration of calcium impurities and use thereof for production of single-crystal silicon 失效
标题翻译：具有Calziumverunreinigungen的低浓度及其对硅单晶的制造中使用石墨坩埚支撑
公开(公告)号：EP0892091A1
公开(公告)日：1999-01-20
申请号：EP97304874.7
申请日：1997-07-03
申请人： MEMC Electronic Materials, Inc.
发明人： Banan, Mohsen , Hansen, Richard Lee
IPC分类号： C30B15/10 , C30B35/00 , C30B29/06
CPC分类号： C30B15/10 , C04B35/52 , C30B35/002
摘要： Methods for producing single-crystal silicon (55) in a Czochralski-type crystal puller and novel graphite support vessels (e.g. susceptors (30)) used in such methods for supporting silica containers (e.g. crucibles (10; 10', 10'')) are disclosed. The concentration of alkaline-earth metal and alkali metal impurities, particularly calcium, present in a graphite support vessel (e.g. susceptor (30)) substantially affects non-uniform devitrification of a silica container (e.g. crucible (10; 10', 10'')) being supported by the support vessel (30) during production of single-crystal silicon (55) in a Czochralski-type crystal puller. Advantageously, the use of a graphite support vessel (30) having sufficiently low calcium concentration, preferably not in excess of about 1 ppm by weight, allows for the production of single-crystal silicon (55) without substantial non-uniform devitrification of the vitreous silica container (10; 10', 10'') holding the molten silicon (48) --- even where the silicon melt (48) is produced from a relatively higher capacity charge requiring heating of the support vessel (30) to relatively higher temperatures. Reducing the extent of localized crystallization of the vitreous silica container (10; 10', 10'') lowers the potential for a loss of structural integrity of the silica container (10; 10', 10'') and allows for improved silicon crystal quality, including improved zero-defect growth.
摘要翻译：）10“ 10' ”;对于（在切克拉斯基型晶体拉制器和新颖的石墨支援船55）（例如感受器（30）生产单晶硅）中搜索用于支撑二氧化硅容器例如坩埚的方法（使用（10方法）的游离缺失盘。碱土金属和碱金属中的杂质，特别是钙，存在于石墨支撑容器（例如基座（30））的浓度显着地影响二氧化硅容器的非均匀的失透（例如坩埚（10; 10“ 10' ” ））由生产切克劳斯基型晶体拉制器单晶硅（55）的过程中支撑容器（30）的支持。有利地，使用具有足够低的钙浓度的石墨支撑容器（30）的，优选不超过约1重量ppm，允许在不玻璃体的大量非均匀的失透生产单晶硅（55）的二氧化硅容器（10; 10“ 10' ”）保持所述熔融硅（48）---即使在硅熔体（48）由相对较高的容量需要充电的支撑容器的加热（30）产生的相对较高的温度。降低了石英玻璃容器的局部结晶的程度（10; 10”，10' ‘）降低了的二氧化硅容器的结构完整性损失的可能性（10; 10’，10‘’），并允许改进的硅晶体质量，包括改进零缺陷增长。

3. 发明公开

EP0761597A1 Cleaning of metallic contaminants from the surface of polycrystalline silicon 失效
标题翻译： polykristallinischen除去硅表面的金属杂质的方法
公开(公告)号：EP0761597A1
公开(公告)日：1997-03-12
申请号：EP96305195.8
申请日：1996-07-15
申请人： MEMC Electronic Materials, Inc.
发明人： Hansen, Richard L. , Banan, Mohsen
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： A process for removing metallic contaminants from the surface of chunk or granular polycrystalline silicon is disclosed. The metallic contaminants are exposed to a gas-phase halogen etchant which reacts with the metallic contaminants to form metal halides. The gas-phase halogen etchant is preferably a halogen plasma. The metal halides are volatilized into an atmosphere adjacent to the surface of the polycrystalline silicon, and purged therefrom. The cleaned polycrystalline silicon is used to prepare a mass of molten silicon for use in producing a single crystal silicon ingot by the Czochralski method.
摘要翻译：一种用于从组块或颗粒状多晶硅的表面除去金属杂质处理游离缺失盘。所述金属杂质暴露于气相卤素腐蚀剂与金属杂质反应形成金属卤化物。气相卤素腐蚀剂优选的是卤素等离子体。金属卤化物挥发到大气毗邻多晶硅的表面，并从那里吹扫。的清洁的多晶硅用于制备熔硅的质量用于生产通过切克劳斯基法的单晶硅锭。

4. 发明公开

EP2295619A1 Low Defect Density Silicon Having A Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults 有权
标题翻译：一种用于生产具有低缺陷密度和空位为主芯的硅的过程，是不含氧化诱导堆垛层错的基本上
公开(公告)号：EP2295619A1
公开(公告)日：2011-03-16
申请号：EP10177865.2
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750 DEG C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot.; the process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种用于制备单晶硅锭，以及到该锭或晶片从那里产生的过程。该工艺包括控制（I）的生长速度V，（ⅱ）平均轴向温度梯度，G，和（iii）从凝固晶体的冷却速率至约750℃，以引起的形成具有第一轴对称区从铸锭worin硅自 - 填隙原子的侧表面径向向内延伸的段是主要的本征点缺陷，以及第二轴对称区从第一和朝向锭的中心轴线沿径向向内延伸。 ; 该过程DASS V，G和冷却速率被控制以防止团聚本征点缺陷的在第一区域中的形成，而冷却速度进一步控制以限制氧化的诱导源自晶片的堆垛层错的形成该段，在将晶片经受另外适合用于寻找故障的形成的氧化处理。

5. 发明公开

EP0785298A1 Rapid cooling of cz silicon crystal growth system 失效
标题翻译： cz硅晶体生长系统的快速冷却
公开(公告)号：EP0785298A1
公开(公告)日：1997-07-23
申请号：EP97300038.3
申请日：1997-01-06
申请人： MEMC Electronic Materials, Inc.
发明人： Banan, Mohsen , Kim, Kyong-Min , Korb, Harold W.
IPC分类号： C30B15/14 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
摘要： A Czochralski method for producing monocrystals wherein a single crystal silicon rod (13) is pulled from a silicon melt (9) contained in a crucible (3) within a chamber (1). After pulling the single crystal silicon rod (13) from a silicon melt (9) in a chamber (1), the chamber (1) is cooled by flowing a gas having a thermal conductivity of at least about 55x10 -5 g.cal./(sec.● cm 2 ) (°C/cm) at 800°K into the chamber (1). The preferred cooling gas is a helium-containing gas.
摘要翻译：一种用于制造单晶的切克劳斯基方法，其中从容纳在腔室（1）内的坩埚（3）中的硅熔体（9）中拉出单晶硅棒（13）。在从室（1）中的硅熔体（9）中拉出单晶硅棒（13）之后，通过使导热率至少约为55×10 -5 g·cm 2的气体流动来冷却室（1）。 /（秒·平方厘米）（℃/厘米）在800°K进入室（1）。优选的冷却气体是含氦气体。

6. 发明公开

EP1688519A3 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 审中-公开
标题翻译：硅低缺陷密度和CORE空位为主，即氧化诱导堆垛层错基本上不含
公开(公告)号：EP1688519A3
公开(公告)日：2007-10-17
申请号：EP06111930.1
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B15/00 , C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750°C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种用于制备单晶硅锭，以及到该锭或晶片从那里产生的过程。该工艺包括控制（I）的生长速度V，（ⅱ）平均轴向温度梯度，G，和（iii）从凝固晶体的冷却速率至约750℃，以引起的形成具有第一轴对称区从铸锭worin硅自 - 填隙原子的侧表面径向向内延伸的段是主要的本征点缺陷，以及第二轴对称区从第一和朝向锭的中心轴线沿径向向内延伸。该过程DASS V，G和冷却速率被控制以防止团聚本征点缺陷的在第一区域中的形成，而冷却速度进一步控制以限制氧化的诱导源自晶片的堆垛层错的形成该段，在将晶片经受另外适合用于寻找故障的形成的氧化处理。

7. 发明公开

EP1688519A2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 审中-公开
标题翻译：硅低缺陷密度和CORE空位为主，即氧化诱导堆垛层错基本上不含
公开(公告)号：EP1688519A2
公开(公告)日：2006-08-09
申请号：EP06111930.1
申请日：2002-01-22
申请人： MEMC Electronic Materials, Inc.
发明人： Kim, Chang Bum , Kimbel, Steven L , Libbert, Jeffrey L , Banan, Mohsen
IPC分类号： C30B15/00 , C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (I) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750°C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterised in that v, G and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.

8. 发明授权

EP0785298B1 Rapid cooling of cz silicon crystal growth system 失效
标题翻译： cz硅晶体生长系统的快速冷却
公开(公告)号：EP0785298B1
公开(公告)日：2002-06-26
申请号：EP97300038.3
申请日：1997-01-06
申请人： MEMC Electronic Materials, Inc.
发明人： Banan, Mohsen , Kim, Kyong-Min , Korb, Harold W.
IPC分类号： C30B15/14 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032

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