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1. 发明公开

EP1320116A1 FIELD EMISSION ELECTRON SOURCE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译： VERFAHREN ZU IHRER HERSTELLUNG焊接技术 - ELEKTRONENQUELLE
公开(公告)号：EP1320116A1
公开(公告)日：2003-06-18
申请号：EP02722726.3
申请日：2002-04-24
申请人： Matsushita Electric Works, Ltd.
发明人： KOMODA, Takuya, MATSUSHITA ELECTRIC WORKS, LTD. , AIZAWA, Koichi, MATSUSHITA ELECTRIC WORKS, LTD. , HONDA, Yoshiaki, MATSUSHITA ELECTRIC WORKS, LTD. , ICHIHARA, Tsutomu, MATSUSHITA ELECTRIC WORKS, LTD. , WATABE, Yoshifumi, MATSUSHITA ELECTRIC WORKS, LTD. , HATAI, Takashi, MATSUSHITA ELECTRIC WORKS, LTD. , BABA, Toru, MATSUSHITA ELECTRIC WORKS, LTD. , TAKEGAWA, Yoshiyuki, MATSUSHITA ELECT. WORKS, LTD.
IPC分类号： H01J1/312 , H01J9/02
CPC分类号： B82Y10/00 , H01J1/304 , H01J1/312 , H01J9/022 , H01J9/025 , H01J2201/30446 , H01J2201/3125
摘要： In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.
摘要翻译：在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。在n型硅衬底（1）的背面设有欧姆电极（2）。施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由表面电极（7）。强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上并且各自具有使得发生电子隧道现象的程度的膜厚度。

2. 发明公开

EP1505640A1 METHOD FOR ELECTROCHEMICAL OXIDATION 审中-公开
标题翻译： VERFAHREN ZUR ELEKTROCHEMISCHEN氧化
公开(公告)号：EP1505640A1
公开(公告)日：2005-02-09
申请号：EP03723363.2
申请日：2003-05-14
申请人： Matsushita Electric Works, Ltd.
发明人： WATABE, Yoshifumi, MATSUSHITA ELECTRIC WORKS, LTD. , AIZAWA, Koichi, MATSUSHITA ELECTRIC WORKS, LTD. , KOMODA, Takuya, MATSUSHITA ELECTRIC WORKS, LTD. , HATAI, Takashi, MATSUSHITA ELECTRIC WORKS, LTD. , HONDA, Yoshiaki, MATSUSHITA ELECTRIC WORKS, LTD.
IPC分类号： H01L21/316 , C25D11/32
CPC分类号： H01L21/02238 , C25D11/32 , C25D21/12 , H01J9/025 , H01L21/02258 , H01L21/02299 , H01L21/0231 , H01L21/31675 , H01L21/31687
摘要： Disclosed is a method for the electrochemical oxidation of a semiconductor layer. In an electrochemical oxidation treatment for the production process of an electron source 10 (field-emission type electron source) as one of electronic devices, a control section 37 determines a voltage increment due to the resistance of an electrolytic solution B in advance, based on a detected voltage from a resistance detect section 35. Then, the control section 37 controls a current source to supply a constant current so as to initiate an oxidation treatment for a semiconductor layer formed on an object 30. The control section 37 corrects a detected voltage from a voltage detect section 36 by subtracting the voltage increment therefrom. When the corrected voltage reaches a given upper voltage value, the control section 37 is operable to discontinue the output of the current source 32 and terminate the oxidation treatment. The present invention allows electronic devices to be produced with reduced variation in the characteristics thereof.
摘要翻译：公开了半导体层的电化学氧化的方法。在作为电子设备之一的电子源10（场致发射型电子源）的制造工序的电化学氧化处理中，控制部37基于电解液B的电阻预先确定电压增量，基于来自电阻检测部分35的检测电压。然后，控制部分37控制电流源以提供恒定电流，以便开始对形成在对象30上的半导体层的氧化处理。控制部分37校正检测电压从电压检测部分36减去其电压增量。当校正电压达到给定的上限电压值时，控制部分37可操作地中止电流源32的输出并终止氧化处理。本发明允许以特性减小的方式制造电子设备。

3. 发明公开

EP1761105A1 PRESSURE WAVE GENERATOR AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译： DRUCKWELLENGENERATOR UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1761105A1
公开(公告)日：2007-03-07
申请号：EP05737154.4
申请日：2005-04-28
申请人： MATSUSHITA ELECTRIC WORKS, LTD.
发明人： WATABE, Yoshifumi, MATSUSHITA ELECTRIC WORKS LTD. , HONDA, Yoshiaki, MATSUSHITA ELECTRIC WORKS, LTD.
IPC分类号： H04R23/00
CPC分类号： H04R23/002 , B06B1/02
摘要： Even when compression stress is generated because a volume of a thermal insulation layer 2 is expanded due to oxidized by oxygen in the air, occurrence of cracks and fractures of the thermal insulation layer and a heating conductor 3 caused by the cracks are prevented by dispersing the compression stress. A pressure wave generator comprises a substrate 1, the thermal insulation layer 2 of porous material which is formed on a surface of the substrate 1 in thickness direction, and the heating conductor 3 of thin film formed on the thermal insulation layer 2, and generates pressure waves by heat exchange between the heating conductor 3 and a medium. When a thickness at the center of the thermal insulation layer 2 in width direction W is used as a reference thickness, and it is assumed that distribution of thickness of thermal insulation layer in the width direction is averaged with the reference thickness, porosity in an outer peripheral portion of the thermal insulation layer is made smaller than porosity in the center portion. By making the porosity in the outer peripheral portion of the thermal insulation layer 2 smaller, a number of immovable points on the outer periphery of the thermal insulation layer 2 restricted by the substrate 1 is increased and the positions of them are dispersed, so that the compression stress compressed in the outer peripheral portion of the thermal insulation layer 2 can be dispersed.
摘要翻译：即使当由于空气中的氧被氧化而导致绝热层2的体积膨胀而产生压缩应力时，通过将由于裂纹引起的绝热层和加热导体3的裂纹和加热导体3的裂纹的分散压缩应力。压力波发生器包括基板1，在基板1的厚度方向的表面上形成的多孔材料的绝热层2和形成在绝热层2上的薄膜的加热导体3，并产生压力通过加热导体3和介质之间的热交换产生波浪。当使用绝热层2的宽度方向W的中心的厚度作为基准厚度时，假定绝热层的宽度方向的厚度分布与基准厚度平均，外部的孔隙率使绝热层的周边部分比中心部分的孔隙度小。通过使绝热层2的外周部的孔隙率变小，由基板1限制的绝热层2的外周上的多个不动点增加，并且它们的位置分散，能够分散在绝热层2的外周部压缩的压缩应力。

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