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    • 7. 发明公开
    • Phase change recording with crystallization improving layer
    • 用结晶改进层进行相变记录
    • EP1526522A1
    • 2005-04-27
    • EP05001400.0
    • 2000-03-24
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Kojima, RieYamada, NoboruKitaura, Hideki
    • G11B7/24G11B7/26B41M5/26
    • G11B7/266G11B7/00454G11B7/2403G11B7/24038G11B7/243G11B7/252G11B7/2534G11B7/2542G11B7/257G11B7/259G11B7/26G11B7/268G11B2007/24312G11B2007/24314G11B2007/24316G11B2007/25706G11B2007/2571G11B2007/25718Y10T428/21
    • An information recording medium (50) includes at least a recording layer (5) formed on a substrate (1), the recording layer (5) including a phase change layer (4) in which a reversible phase change is caused between a crystalline state and an amorphous state by irradiation of a light beam (27), and a crystallization-ability improving layer (3) for improving a crystallization ability of the phase change layer. The crystallization-ability improving layer (3) is formed of a telluride and a halogenide before the phase change layer (4) is formed. Thus, crystal nucleus generation and crystal growth are caused during formation of the phase change layer (4), so that at least a portion of the phase change layer (4) is in the crystalline phase after the formation. Thus, information signals can be recorded/reproduced at a high density and a high linear velocity, and thus the present invention provides a highly reliable optical information recording medium. Further, the present invention provides an information recording medium that allows a recording operation to be performed on the recording layer in the as-depo amorphous state without the initialization process.
    • 一种信息记录介质(50)至少包括形成在基板(1)上的记录层(5),所述记录层(5)包括相变层(4),在所述相变层中在结晶态 (27)照射的无定形状态以及用于提高相变层的结晶能力的结晶化能力提高层(3)。 在相变层(4)形成之前,结晶能力改进层(3)由碲化物和卤化物形成。 因此,在形成相变层(4)期间引起晶核生成和晶体生长,使得相变层(4)的至少一部分在形成之后处于结晶相中。 因此,可以以高密度和高线速度记录/再现信息信号,因此本发明提供了一种高度可靠的光学信息记录介质。 此外,本发明提供了一种信息记录介质,其允许在没有初始化处理的情况下在记录层上以非平衡非晶态进行记录操作。