专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2677546B1 Method for manufacturing solar cell and dopant layer thereof 有权转让
标题翻译：一种用于生产太阳能电池和所述掺杂层为过程
公开(公告)号：EP2677546B1
公开(公告)日：2017-03-01
申请号：EP13002270.0
申请日：2013-04-29
申请人： LG Electronics, Inc.
发明人： Cheong, Juhwa , Jin, Yongduk , Yang, Youngsung , Ha, Manhyo
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/02168 , H01L31/022441 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521

2. 发明公开

EP2879189A3 Solar cell and method of manufacturing the same 有权转让
标题翻译：用于制备太阳能电池及其制造方法
公开(公告)号：EP2879189A3
公开(公告)日：2015-07-29
申请号：EP14004013.0
申请日：2014-11-27
申请人： LG Electronics Inc.
发明人： Yang, Youngsung , Choi, Junghoon , Park, Hyunjung
IPC分类号： H01L31/0224 , H01L21/266 , H01L31/0747 , H01L31/18 , H01L31/0352
摘要： A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate, a first conductivity type region and a second conductivity type region disposed on the same side of the semiconductor substrate, wherein at least one of the first and second conductivity type regions includes a main region and a boundary region disposed at a peripheral portion of the main region, and the boundary region has at least one of a varying doping concentration and a varying doping depth.

3. 发明公开

EP2662904A2 Solar cell, method for manufacturing dopant layer, and method for manufacturing solar cell 有权转让
标题翻译：太阳能电池，制造掺杂层的方法，以及用于制造太阳能电池的方法
公开(公告)号：EP2662904A2
公开(公告)日：2013-11-13
申请号：EP13000790.9
申请日：2013-02-15
申请人： LG Electronics, Inc.
发明人： Yang, Youngsung , JIN, Yongduk , HA, Manhyo , Cheong, Juhwa
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/03529 , H01L31/068 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a method of manufacturing a solar cell (100) includes forming a dopant layer (20) by doping with a dopant (202) of a first conductivity type and a counter dopant (204) of a second conductivity type opposite to the first conductivity type to a surface of a semiconductor substrate. Here, a doping amount of the counter dopant (204) is less than a doping amount of the dopant (202).

4. 发明公开

EP2662898A1 Solar cell and method for manufacturing the same 有权转让
标题翻译： Solarzelle und Verfahren zur Herstellung einer Solarzelle
公开(公告)号：EP2662898A1
公开(公告)日：2013-11-13
申请号：EP12006850.7
申请日：2012-10-02
申请人： LG Electronics Inc.
发明人： Yang, Youngsung , Jin, Yongduk , Ha, Manhyo , Cheong, Juhwa
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
摘要翻译：根据实施例的太阳能电池包括半导体衬底; 形成在所述半导体衬底的一个表面处的第一掺杂剂层; 以及电连接到第一掺杂剂层的第一电极。第一掺杂剂层的至少一部分包括预非晶化元素，并且第一掺杂剂层的一部分中的非淀粉化元素的浓度不同于第一掺杂剂层的另一部分中的预非晶化元素的浓度掺杂层。

5. 发明公开

EP2525412A3 Solar cell and solar cell module 有权转让
标题翻译：太阳能电池和太阳能电池模块
公开(公告)号：EP2525412A3
公开(公告)日：2012-12-05
申请号：EP12003230.5
申请日：2012-04-30
申请人： LG ELECTRONICS INC.
发明人： Yang, Youngsung , Shin, Myungjun , Choi, Minho , Lee, Seongeun
IPC分类号： H01L31/0224 , H01L31/068
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate (110), an emitter region (121) positioned at the semiconductor substrate, a first electrode which is positioned on the semiconductor substrate and is connected to the emitter region, a second electrode which is positioned on the semiconductor substrate and is connected to the semiconductor substrate, and a second electrode current collector which is positioned on the semiconductor substrate and is connected to the second electrode. An overlap distance (d21, d22) between the second electrode and the second electrode current collector in a first direction (Y) corresponding to an extension direction of a conductive film positioned on the second electrode current collector is less than an overlap distance (d11, d12) between the second electrode and the second electrode current collector in a second direction (X) crossing the first direction.

6. 发明公开

EP3104417A2 METHOD OF MANUFACTURING A PROTECTIVE FILM FOR A SOLAR CELL 有权转让
标题翻译：制造用于太阳能电池的保护涂层
公开(公告)号：EP3104417A2
公开(公告)日：2016-12-14
申请号：EP16173691.3
申请日：2016-06-09
申请人： LG ELECTRONICS INC.
发明人： Yang, Youngsung , Kwon, Hyungjin , Kim, Chungyi , Choi, Junghoon
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/0236 , H01L21/316
CPC分类号： H01L31/1868 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L31/02167 , H01L31/0682 , H01L31/1864 , Y02E10/547
摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

7. 发明公开

EP2988336A2 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权转让
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2988336A2
公开(公告)日：2016-02-24
申请号：EP15002380.2
申请日：2015-08-10
申请人： LG Electronics Inc.
发明人： Yang, Youngsung , Choi, Junghoon , Kim, Chungyi
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/0352
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/022441 , H01L31/035209 , H01L31/035272 , H01L31/03529 , H01L31/065 , H01L31/0745 , H01L31/0747 , H01L31/18 , Y02E10/50
摘要： A solar cell comprises: a semiconductor substrate (10); a tunneling layer (20) formed on a surface of the semiconductor substrate; a p-type conductive region (32) and a n-type conductive region (34) formed on the tunneling layer, the p- and n-type conductive regions being disposed next to each other in a direction parallel to the surface of the semiconductor substrate and being separated by a barrier region (36); and an electrode structure (42, 44) electrically connected to the p- and n-type conductive regions, wherein the barrier region includes an intrinsic semiconductor portion (30c) and a buffer portion (22c) located between the intrinsic semiconductor portion and the tunneling layer, the buffer portion having stronger electrical insulating property than the intrinsic semiconductor portion.
摘要翻译：一种太阳能电池包括：半导体衬底（10）; 形成在所述半导体衬底的表面上的隧穿层（20）形成在隧穿层上的p型导电区域（32）和n型导电区域（34），p型和n型导电区域在平行于半导体表面的方向上彼此相邻地设置衬底并且被阻挡区域（36）分开; 和电连接到所述p型和n型导电区域的电极结构（42,44），其中所述阻挡区域包括本征半导体部分（30c）和位于所述本征半导体部分和所述隧穿之间的缓冲部分（22c）层，缓冲部分具有比本征半导体部分更强的电绝缘特性。

8. 发明公开

EP2879189A2 Solar cell and method of manufacturing the same 有权转让
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2879189A2
公开(公告)日：2015-06-03
申请号：EP14004013.0
申请日：2014-11-27
申请人： LG Electronics Inc.
发明人： Yang, Youngsung , Choi, Junghoon , Park, Hyunjung
IPC分类号： H01L31/0224 , H01L21/266 , H01L31/0747 , H01L31/18
摘要： A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate, a first conductivity type region and a second conductivity type region disposed on the same side of the semiconductor substrate, wherein at least one of the first and second conductivity type regions includes a main region and a boundary region disposed at a peripheral portion of the main region, and the boundary region has at least one of a varying doping concentration and a varying doping depth.
摘要翻译：讨论太阳能电池。根据实施例的太阳能电池包括半导体衬底，设置在半导体衬底的同一侧上的第一导电类型区域和第二导电类型区域，其中第一导电类型区域和第二导电类型区域中的至少一个包括主区域和设置在主区域的周边部分处的边界区域，并且边界区域具有变化的掺杂浓度和变化的掺杂深度中的至少一个。

9. 发明公开

EP2525412A2 Solar cell and solar cell module 有权转让
标题翻译：太阳能电池和太阳能电池组件
公开(公告)号：EP2525412A2
公开(公告)日：2012-11-21
申请号：EP12003230.5
申请日：2012-04-30
申请人： LG ELECTRONICS INC.
发明人： Yang, Youngsung , Shin, Myungjun , Choi, Minho , Lee, Seongeun
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate (110), an emitter region (121) positioned at the semiconductor substrate, a first electrode which is positioned on the semiconductor substrate and is connected to the emitter region, a second electrode which is positioned on the semiconductor substrate and is connected to the semiconductor substrate, and a second electrode current collector which is positioned on the semiconductor substrate and is connected to the second electrode. An overlap distance (d21, d22) between the second electrode and the second electrode current collector in a first direction (Y) corresponding to an extension direction of a conductive film positioned on the second electrode current collector is less than an overlap distance (d11, d12) between the second electrode and the second electrode current collector in a second direction (X) crossing the first direction.
摘要翻译：一种太阳能电池，包括：半导体衬底（110）;位于所述半导体衬底处的发射极区域（121）;位于所述半导体衬底上且连接至所述发射极区域的第一电极;位于所述半导体衬底上的第二电极衬底并且连接到半导体衬底;以及第二电极集流器，位于半导体衬底上并连接到第二电极。第二电极和第二电极集流体之间在与位于第二电极集流体上的导电膜的延伸方向相对应的第一方向（Y）上的重叠距离（d21，d22）小于重叠距离（d11， d12）在与第一方向交叉的第二方向（X）上在第二电极和第二电极集流器之间。

10. 发明公开

EP3104417A3 METHOD OF MANUFACTURING A PROTECTIVE FILM FOR A SOLAR CELL 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SCHUTZSCHICHTFÜRSOLARZELLEN
公开(公告)号：EP3104417A3
公开(公告)日：2017-03-15
申请号：EP16173691.3
申请日：2016-06-09
申请人： LG ELECTRONICS INC.
发明人： Yang, Youngsung , Kwon, Hyungjin , Kim, Chungyi , Choi, Junghoon
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/0236 , C23C16/40
CPC分类号： H01L31/1868 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L31/02167 , H01L31/0682 , H01L31/1864 , Y02E10/547
摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.
摘要翻译：公开了一种制造太阳能电池的方法。该方法包括使用半导体衬底上的绝缘膜形成保护膜（20,24,40），该半导体衬底包括第一导电类型的基底区域（110）并由晶体硅形成。保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下，在600℃以上的热处理温度下进行的热处理工序。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式