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1. 发明公开

EP3038175A4 THERMOELECTRIC MATERIAL AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：热电材料和方法及其生产
公开(公告)号：EP3038175A4
公开(公告)日：2017-02-22
申请号：EP14854841
申请日：2014-10-16
申请人： LG CHEMICAL LTD
发明人： KO KYUNG-MOON , KIM TAE-HOON , PARK CHEOL-HEE
IPC分类号： H01L35/14 , C01B19/00 , H01L35/16
CPC分类号： H01L35/16 , C01B19/007 , C01P2002/54 , C01P2002/72 , C01P2006/32 , C01P2006/40 , H01L35/14
摘要： Disclosed is a thermoelectric material with excellent thermoelectric performance. The thermoelectric material is expressed by Chemical Formula 1 below: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ €ƒ€ƒ€ƒ€ƒ€ƒCu x Se 1-y Q y where Q is at least one element selected from the group consisting of S and Te, 2

2. 发明公开

EP2924748A4 THERMOELECTRIC MATERIAL 有权转让
标题翻译：热塑性材料
公开(公告)号：EP2924748A4
公开(公告)日：2016-07-20
申请号：EP14842225
申请日：2014-09-05
申请人： LG CHEMICAL LTD
发明人： KO KYUNG-MOON , KIM TAE-HOON , PARK CHEOL-HEE , LEE JAE-KI
IPC分类号： H01L35/14 , C01B19/00 , C01G3/00 , H01L35/16
CPC分类号： H01L35/16 , C01B19/007 , C01G3/00 , C01P2002/72 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01L35/14
摘要： Disclosed is a thermoelectric conversion material having excellent performance. The thermoelectric material according to the present disclosure includes Cu and Se, and has a plurality of different crystal structures together, in which Cu atoms and Se atoms are arranged in the crystal, at a predetermined temperature.

3. 发明公开

EP2924746A4 METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL 有权转让
标题翻译：方法带有电气THERMO MATERIAL
公开(公告)号：EP2924746A4
公开(公告)日：2016-07-20
申请号：EP14841837
申请日：2014-09-05
申请人： LG CHEMICAL LTD
发明人： KO KYUNG-MOON , KIM TAE-HOON , PARK CHEOL-HEE , LEE JAE-KI
IPC分类号： H01L35/14 , C01B19/00 , C01G3/00 , H01L35/16
CPC分类号： H01L35/16 , C01B19/007 , C01G3/00 , C01P2002/72 , C01P2002/74 , C01P2004/01 , C01P2004/03
摘要： Disclosed is a method for manufacturing a thermoelectric material having high thermoelectric conversion performance in a broad temperature range. The method for manufacturing a thermoelectric material according to the present disclosure includes forming a mixture by weighing Cu and Se based on the following chemical formula 1 and mixing the Cu and the Se, and forming a compound by thermally treating the mixture: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ €ƒ€ƒ€ƒ€ƒ€ƒCu x Se where 2

4. 发明公开

EP2899763A4 NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF 有权
标题翻译：新的关联和使用它
公开(公告)号：EP2899763A4
公开(公告)日：2016-06-01
申请号：EP14849468
申请日：2014-09-18
申请人： LG CHEMICAL LTD
发明人： CHOI HYUN-WOO , LIM BYUNG-KYU , KIM TAE-HOON , PARK CHEOL-HEE , YOU EUN-AH , KWON O-JONG
IPC分类号： C01B19/00 , H01L35/14
CPC分类号： H01L35/16 , C01B19/002 , C01B19/007 , C01P2006/32 , C01P2006/40 , H01L31/0272 , H01L31/02725 , H01L35/18 , H01L35/20 , H01L35/34

5. 发明公开

EP2854206A4 HIGH-CAPACITY ANODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, MANUFACTURING METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY COMPRISING SAME 审中-公开
标题翻译：高性能负极活性物质的二次电池的锂，工艺用于生产和锂二次电池
公开(公告)号：EP2854206A4
公开(公告)日：2016-01-27
申请号：EP13859936
申请日：2013-11-29
申请人： LG CHEMICAL LTD
发明人： LEE YONG-JU , KIM JE-YOUNG , KIM TAE-HOON , PARK CHEOL-HEE , KANG YOON-AH , LEE MI-RIM , JUNG HYE-RAN , JEONG HAN-NAH
IPC分类号： H01M4/587 , H01M4/04 , H01M4/13 , H01M4/133 , H01M4/139 , H01M4/1393 , H01M4/36 , H01M4/48 , H01M10/0525
CPC分类号： H01M4/366 , H01M4/0471 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/483 , H01M4/485 , H01M4/587 , H01M4/625 , H01M10/0525 , Y02E60/122 , Y02P70/54 , Y02T10/7011

6. 发明公开

EP2708503A4 NOVEL COMPOUND SEMICONDUCTOR AND USAGE FOR SAME 有权
标题翻译：维也纳大学教授
公开(公告)号：EP2708503A4
公开(公告)日：2015-04-01
申请号：EP12786280
申请日：2012-05-11
申请人： LG CHEMICAL LTD
发明人： PARK CHEOL-HEE , KIM TAE-HOON
IPC分类号： C01G51/00 , C01B19/00 , H01L35/18
CPC分类号： C01G51/006 , C01B19/002 , H01L35/18

7. 发明公开

EP2316793A4 NEW SEMICONDUCTIVE COMPOUND, METHOD OF MANUFACTURE THEREOF, AND THERMOELECTRIC COMPONENT USING THE SAME 有权
标题翻译：新的半导电性化合物，方法用于生产和热电组件
公开(公告)号：EP2316793A4
公开(公告)日：2013-11-20
申请号：EP09810242
申请日：2009-08-31
申请人： LG CHEMICAL LTD
发明人： PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , KIM TAE-HOON , HONG SEUNG-TAE
IPC分类号： H01L35/16 , C01B19/00 , C01G3/00 , C01G29/00 , H01L35/18
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
摘要： Disclosed is a new compound semiconductor represented by the chemical formula: Bi 1-x-y Ln x M y CuOTe where Ln belongs to the lanthanoid series and is any one or more elements selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, M is any one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, and 0

8. 发明公开

EP2320485A4 NEW THERMOELECTRIC MATERIAL, METHOD OF MANUFACTURE THEREOF AND THERMOELECTRIC COMPONENT USING THE SAME 有权
标题翻译：新型热电材料，及其制造方法热电组件
公开(公告)号：EP2320485A4
公开(公告)日：2013-10-30
申请号：EP09810246
申请日：2009-08-31
申请人： LG CHEMICAL LTD
发明人： PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , HONG SEUNG-TAE , KIM TAE-HOON
IPC分类号： H01L35/16 , C01B19/00 , C01G3/00 , C01G29/00 , H01L35/18
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50

9. 发明公开

EP3073535A4 NOVEL COMPOUND SEMICONDUCTOR AND UTILIZATION THEREOF 有权转让
标题翻译： NEUARTIGER VERBUNDHALBLEITER UND VERWENDUNG DAVON
公开(公告)号：EP3073535A4
公开(公告)日：2017-06-21
申请号：EP14865588
申请日：2014-11-28
申请人： LG CHEMICAL LTD
发明人： KWON O-JONG , KIM TAE-HOON , PARK CHEOL-HEE , KO KYUNG-MOON
IPC分类号： H01L31/04 , C01B19/00 , H01L31/18
CPC分类号： H01L35/18 , C01B19/002 , C01P2004/60 , C01P2006/40 , H01L31/032 , H01L35/16
摘要： In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ €ƒ€ƒ€ƒ€ƒ€ƒ[Bi 1-x M x Cu u-w T w O a-y Q1 y Te b Se z ]A c Where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0‰¤x
摘要翻译：在本公开中，公开了可用作热电材料等的新型化合物半导体及其应用。根据本公开的化合物半导体可以由以下化学式1表示：[Bi 1-x M] [Bi 1-x M 其中，在化学式1中，M是选自Ba，Sr，Ca，Mg，Cs，K，Na， Cd，Hg，Sn，Pb，Mn，Ga，In，Tl，As和Sb; Q1是选自S，Se，As和Sb中的一种或多种元素; T是选自过渡金属元素中的一种或多种元素; A是选自过渡金属元素和过渡金属元素和VI族元素的化合物中的一种或多种元素; 和0‰x <1，0.5‰u‰1.5，0

10. 发明公开

EP2958156A4 NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF 有权
标题翻译：维也纳维也纳维也纳公民报
公开(公告)号：EP2958156A4
公开(公告)日：2016-07-20
申请号：EP14850400
申请日：2014-10-06
申请人： LG CHEMICAL LTD
发明人： KWON O-JONG , KIM TAE-HOON , PARK CHEOL-HEE , KO KYUNG-MOON , CHUNG CHAN-YEUP
IPC分类号： H01L35/16 , C01B19/00 , H01L35/14
CPC分类号： C01B19/002 , C01P2006/40 , H01L31/0272 , H01L35/16 , H01L35/18 , H01L35/34
摘要： Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Chemical Formula 1 €ƒ€ƒ€ƒ€ƒ€ƒBi l-x M x Cu l-w T w O a-y Ql y Te b Se z where, in Chemical Formula 1, M is at least one selected from the group consisting Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Ql is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0‰¤x
摘要翻译：公开了可用于热电材料等的新的化合物半导体材料及其应用。化合物半导体可以由下面的化学式1表示：ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ化学式1€ƒ€ƒ€ƒ€ƒBilx M x Cu lw T w O ay Q 1 y Te b Se z其中，在化学式1中，M为选自Sr，Ca，Mg，Cs，K，Na，Cd，Hg，Sn，Pb，Mn，Ga，In，Tl中的至少一种 As和Sb中，Q 1为选自S，Se，As和Sb中的至少一种，T为选自过渡金属元素中的至少一种，0≤x≤1,0

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