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1. 发明公开

EP1804347A1 TERAHERTZ ELECTROMAGNETIC WAVE RADIATION ELEMENT AND ITS MANUFACTURING METHOD 有权
标题翻译：辐射电磁元用于生产太赫兹波和方法
公开(公告)号：EP1804347A1
公开(公告)日：2007-07-04
申请号：EP05774908.7
申请日：2005-08-23
申请人： Kyushu Institute of Technology , National University Corporation Hokkaido University
发明人： OTSUJI, Taiichi c/o KYUSHU INSTITUTE OF TECHNOLOGY , SANO, Eiichi
IPC分类号： H01S1/02
CPC分类号： H01S1/02 , G02F1/3534 , G02F2203/13 , H01L31/0224 , H01L31/02327 , H01L31/09 , H01S2302/02
摘要： The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band. Two light waves are caused to enter from the lower surface of the transparent metal mirror, and two different dc bias potentials are alternately applied to the double gate electrode grating so as to periodically modulate the electron density of the two-dimensional electron layer in accordance with the configuration of the double gate electrode grating.
摘要翻译：本发明改善的转化从非辐射的二维电子等离子体波成辐射电磁波的效率，并实现宽带特性。本发明的太赫兹波的电磁波辐射元件包括半绝缘半导体本体层，由半导体异质结结构，源的半导体本体层的上方直接形成和二维电子层漏电极电连接到所述双的两个相对侧维电子层，这是在附近，并且平行地设置于二维电子层和用于两个不同的直流偏置电位上表面上的双栅极电极光栅所有可以交替地设置，并且在接触的方式设置的透明金属镜与半导体本体层的下表面，形成为膜形状，如在太赫兹频带反射镜的作用，并且是在光波段透明的。两个光波被使得从所述透明的金属反射镜的下表面进入，和两个不同的直流偏置电势被交替地施加到双栅电极光栅以与周期性调制雅舞蹈的二维电子层的电子密度双栅电极光栅的配置。

2. 发明授权

EP1804347B1 TERAHERTZ ELECTROMAGNETIC WAVE RADIATION ELEMENT AND ITS MANUFACTURING METHOD 有权
标题翻译：辐射电磁元用于生产太赫兹波和方法
公开(公告)号：EP1804347B1
公开(公告)日：2014-01-01
申请号：EP05774908.7
申请日：2005-08-23
申请人： Kyushu Institute of Technology , National University Corporation Hokkaido University
发明人： OTSUJI, Taiichi , SANO, Eiichi
IPC分类号： H01S1/02 , G02F1/35
CPC分类号： H01S1/02 , G02F1/3534 , G02F2203/13 , H01L31/0224 , H01L31/02327 , H01L31/09 , H01S2302/02

3. 发明公开

EP2416365A1 FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：EP2416365A1
公开(公告)日：2012-02-08
申请号：EP10758297.5
申请日：2010-04-01
申请人： National University Corporation Hokkaido University , Tohoku University
发明人： SANO, Eiichi , OTSUJI, Taiichi
IPC分类号： H01L29/78 , H01L21/205 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/161 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L21/823807 , H01L21/02527 , H01L21/02573 , H01L21/02612 , H01L21/8213 , H01L29/1606 , H01L29/165 , H01L29/66431 , H01L29/7781 , H01L29/78618 , H01L29/78684
摘要： The disclosed field-effect transistor has a graphene channel, and does not exhibit ambipolar properties. Specifically, the field-effect transistor has a semi-conducting substrate; a channel including a graphene layer disposed on the aforementioned semiconductor substrate; a source electrode and drain electrode comprising a metal; and a gate electrode. The aforementioned channel and the aforementioned source and drain electrodes comprising a metal are connected via a semiconductor layer.
摘要翻译：所公开的场效应晶体管具有石墨烯沟道，并且不呈现双极性质。具体而言，场效应晶体管具有半导体衬底; 包括设置在上述半导体衬底上的石墨烯层的沟道; 包含金属的源电极和漏电极; 和栅电极。上述沟道和上述包含金属的源电极和漏电极经由半导体层连接。

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