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1. 发明授权

EP1861905B1 POLARIZATION-REVERSED III-NITRIDE LIGHT-EMITTING DEVICE 有权转让
标题翻译：与极化反转发光III族氮化物器件
公开(公告)号：EP1861905B1
公开(公告)日：2009-01-14
申请号：EP06727657.6
申请日：2006-03-10
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company LLC
发明人： WIERER, Jonathan, J., Jr. , CRAFORD, Magnus, G. , EPLER, John , KRAMES, Michael, R.
IPC分类号： H01S5/02 , H01S5/323 , H01L33/00 , H01S5/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a Ill-nitride wurtzite semiconductor light emitting region (53) disposed between a p-type region (54, 58) and an n-type region (56) . A bonded interface (50) is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interlace facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.

2. 发明公开

EP2220695A2 CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：触，实现半导体发光器件
公开(公告)号：EP2220695A2
公开(公告)日：2010-08-25
申请号：EP08862297.2
申请日：2008-12-15
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company LLC
发明人： ALDAZ, Rafael, I , EPLER, John, E. , GRILLOT, Patrick, N. , KRAMES, Michael, R.
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). N-and p-contacts (34, 32) electrically connected to the n-and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount (40) via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 &mgr,-m in some embodiments, less than 10 &mgr,-m in some embodiments. The top side of the semiconductor structure may be textured.

3. 发明公开

EP2033233A1 LOW PROFILE SIDE EMITTING LED 有权转让
标题翻译：低侧面发光LED
公开(公告)号：EP2033233A1
公开(公告)日：2009-03-11
申请号：EP07766687.3
申请日：2007-06-07
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
发明人： SHCHEKIN, Oleg, B. , PUGH, Mark , HARBERS, Gerard , KRAMES, Michael, R. , EPLER, John, E.
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/60 , H01L2224/13
摘要： Low profile, side-emitting LEDs (10) are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light- generating active layer (14). The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes (18) on the same side of the LED, and the LED is mounted electrode-side down on a submount (22). A reflector (34) is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer (14) and eventually exits through a side surface of the LED. A waveguide layer (30) and/or one or more phosphors layers are deposed between the semiconductor layers (12, 14, 16) and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.
摘要翻译：描述了低轮廓的侧面发光LED（10），其中所有的光都在通常平行于发光活性层（14）的表面的相对窄的角度内有效地发射。这些LED能够为背光LCD创造非常薄的背光。在一个实施例中，LED是倒装芯片，其中n和p电极（18）位于LED的同一侧，并且LED电极侧朝下安装在基座（22）上。反射器（34）设置在LED的顶部表面上，使得照射在反射器上的光被反射回有源层（14）并最终通过LED的侧表面出射。在半导体层（12,14,16）和反射器之间设置有波导层（30）和/或一个或多个荧光体层，用于增加侧面发射面积以提高效率。可以创建厚度在0.2-0.4mm之间的侧面发光LED。

4. 发明公开

EP1894256A1 GROWN PHOTONIC CRYSTALS IN SEMICONDUCTOR LIGHT EMITTING DEVICES 有权转让
标题翻译： GROWN光子晶体技术在发光半导体器件
公开(公告)号：EP1894256A1
公开(公告)日：2008-03-05
申请号：EP06756133.2
申请日：2006-06-14
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company LLC
发明人： WIERER, Jonathan, J., Jr. , KRAMES, Michael, R. , GARDNER, Nathan, F.
IPC分类号： H01L33/00 , G02B6/13 , G02B6/122 , C30B29/60
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

5. 发明公开

EP2329517A1 METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 审中-公开
标题翻译：方法的形成松弛的半导体材料层，半导体结构，设备和操作的基片这样的
公开(公告)号：EP2329517A1
公开(公告)日：2011-06-08
申请号：EP09792798.2
申请日：2009-09-21
申请人： S.O.I.Tec Silicon on Insulator Technologies , Philips Lumileds Lighting Company LLC , Koninklijke Philips Electronics N.V.
发明人： LETERTRE, Fabrice , FAURE, Bruce , KRAMES, Michael, R. , GARDNER, Nathan, F.
IPC分类号： H01L21/02
CPC分类号： H01L21/02639 , H01L21/02367 , H01L21/02389 , H01L21/02458 , H01L21/0254
摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

6. 发明公开

EP1932186A1 COMPOSITE HOST-SEED SUBSTRATE FOR GROWING AN III-V LIGHT-EMITTING DEVICE 有权转让
标题翻译： HOST-KEIMSUBSTRATSVERBUND ZUM WACHSTUM VON III-V LICHTEMITTIERENDEN VORRICHTUNGEN
公开(公告)号：EP1932186A1
公开(公告)日：2008-06-18
申请号：EP06809397.0
申请日：2006-09-25
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
发明人： KRAMES, Michael, R. , GARDNER, Nathan, F. , EPLER, John
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host subtrate and a seed layer bonded to the host substrate is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host substrate to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host substrate ma be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：提供包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。在一些实施方案中，键合层将主体结合到种子层。种子层可以比用于缓解半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在籽晶层和结合层之间滑动而消除，两层。在一些实施例中，通过蚀刻掉粘结层，可以将主体与半导体结构和晶种层分离。

7. 发明公开

EP1922766A1 III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION 有权转让
标题翻译：枸杞子三氮UNG UNG UNG UNG UNG UNG UNG UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR
公开(公告)号：EP1922766A1
公开(公告)日：2008-05-21
申请号：EP06795665.6
申请日：2006-08-16
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
发明人： SHEN, Yu-Chen , GARDNER, Nathan, F. , WATANABE, Satoshi , KRAMES, Michael, R. , MUELLER, Gerd, O.
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A Ill-nitride light emitting layer is disposed between an n-type region and a p- type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.
摘要翻译： III族氮化物发光层设置在n型区域和p型区域之间。发光层是掺杂的厚层。在一些实施例中，发光层夹在两个掺杂间隔层之间。

8. 发明公开

EP2033238A2 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING POROUS LAYER 有权转让
标题翻译：多孔发光层半导体器件
公开(公告)号：EP2033238A2
公开(公告)日：2009-03-11
申请号：EP07825794.6
申请日：2007-06-05
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company LLC
发明人： EPLER, John, E. , KRAMES, Michael, R. , ZHAO, Hanmin , KIM, James, C.
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n- type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

9. 发明公开

EP1932187A2 III-V LIGHT EMITTING DEVICE 有权转让
标题翻译： III-V-发光器件
公开(公告)号：EP1932187A2
公开(公告)日：2008-06-18
申请号：EP06821126.7
申请日：2006-09-22
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
发明人： KRAMES, Michael, R. , GARDNER, Nathan, F. , EPLER, John, E.
IPC分类号： H01L33/00
CPC分类号： H01L21/2654 , H01L33/0075 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

10. 发明公开

EP1861905A1 POLARIZATION-REVERSED III-NITRIDE LIGHT-EMITTING DEVICE 有权转让
标题翻译：与极化反转发光III族氮化物器件
公开(公告)号：EP1861905A1
公开(公告)日：2007-12-05
申请号：EP06727657.6
申请日：2006-03-10
申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
发明人： WIERER, Jonathan, J., Jr. , CRAFORD, Magnus, G. , EPLER, John , KRAMES, Michael, R.
IPC分类号： H01S5/02 , H01S5/323 , H01L33/00 , H01S5/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a Ill-nitride wurtzite semiconductor light emitting region (53) disposed between a p-type region (54, 58) and an n-type region (56) . A bonded interface (50) is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interlace facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.

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