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1. 发明公开

EP3954795A1 CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME 审中-公开
公开(公告)号：EP3954795A1
公开(公告)日：2022-02-16
申请号：EP20787755.6
申请日：2020-04-02
申请人： KABUSHIKI KAISHA TOSHIBA , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , KATO, Hiromasa , YANO, Keiichi
IPC分类号： C22C5/08 , C22C9/00 , H01L23/15 , B23K35/30 , H05K1/09
摘要： A ceramic copper circuit board (1) including a ceramic substrate (2), and a copper circuit part (3) located on the ceramic substrate (2), wherein an arbitrary line parallel to a first direction at a cross section of the copper circuit part (3) parallel to the first direction crosses multiple copper crystal grains (10), the first direction is from the ceramic substrate (2) toward the copper circuit part (3), an average of multiple distances in a second direction between the line and edges of the copper crystal grains (10) is not more than 300 µm, and the second direction is perpendicular to the first direction.

2. 发明公开

EP3608951A1 CERAMIC METAL CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME 有权
公开(公告)号：EP3608951A1
公开(公告)日：2020-02-12
申请号：EP18771816.8
申请日：2018-03-15
申请人： Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , YANO, Keiichi , KATO, Hiromasa
IPC分类号： H01L23/28 , H01L23/12 , H01L23/13 , H01L23/36 , H05K1/02 , H05K3/28
摘要： According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm 2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate. An area to provide the concave portion may fall within a range of 3% to 70% of one metal circuit plate surface.

3. 发明公开

EP4026819A1 JOINED BODY, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4026819A1
公开(公告)日：2022-07-13
申请号：EP20861301.8
申请日：2020-08-20
申请人： KABUSHIKI KAISHA TOSHIBA , Toshiba Materials Co., Ltd.
发明人： YONETSU, Maki , SUENAGA, Seiichi , FUJISAWA, Sachiko , NABA, Takayuki
IPC分类号： C04B37/02 , B23K1/19 , H01L23/13
摘要： A bonded body (100) according to an embodiment includes a substrate (1), a metal member (2), and a bonding layer (3). The bonding layer (3) is provided between the substrate (1) and the metal member (2). The bonding layer (3) includes a first particle (11) including carbon, a first region (21) including a metal, and a second region (22) including titanium. The second region (22) is provided between the first particle (11) and the first region (21). A concentration of titanium in the second region (22) is greater than a concentration of titanium in the first region (21).

4. 发明公开

EP3629370A1 CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3629370A1
公开(公告)日：2020-04-01
申请号：EP19210462.8
申请日：2016-08-01
申请人： Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , KATO, Hiromasa , UMEHARA, Masashi
IPC分类号： H01L23/13 , H05K1/02
摘要： To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less. At least one selected from the group consisting of a difference between a maximum value and a minimum value of the first Vickers hardnesses and a difference between a maximum value and a minimum value of the second Vickers hardnesses is 50 or less. At least one selected from the group consisting of the first and second bonding layers contains Ag, Cu and Ti. A side surface of the first metal plate and an inner surface thereof define an angle of 40 degrees or more and 84 degrees or less therebetween.

5. 发明公开

EP4401128A3 CERAMIC METAL CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME 审中-公开
公开(公告)号：EP4401128A3
公开(公告)日：2024-10-02
申请号：EP24179436.1
申请日：2018-03-15
申请人： KABUSHIKI KAISHA TOSHIBA , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , YANO, Keiichi , KATO, Hiromasa
IPC分类号： H01L23/28 , H01L23/12 , H01L23/13 , H01L23/36 , H05K1/02 , H05K3/28 , H01L23/24 , H01L23/053 , H01L23/31 , H01L23/373
CPC分类号： H01L23/3735 , H01L23/24 , H01L23/053 , H01L23/3142
摘要： According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate. An area to provide the concave portion may fall within a range of 3% to 70% of one metal circuit plate surface.

6. 发明公开

EP4297076A1 CERAMIC CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME 审中-实审
公开(公告)号：EP4297076A1
公开(公告)日：2023-12-27
申请号：EP22756097.6
申请日：2022-02-10
申请人： KABUSHIKI KAISHA TOSHIBA , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , YANO, Keiichi , KATO, Hiromasa
IPC分类号： H01L23/13 , H01L23/29 , H01L23/31 , H05K3/38
摘要： A ceramic circuit board includes a ceramic substrate and a metal plate bonded together via a bonding layer, wherein when the ceramic circuit board is observed through a cross-section defined by a thickness direction and lateral direction of the ceramic circuit board: a side surface of the metal plate has an inclined shape; and the bonding layer has a bonding-layer protruding portion which protrudes by 20 µm or more and 150 µm or less from an edge where the bonding layer is in contact with the side surface of the metal plate. The shape and Vickers hardness of the side surface of the metal plate are controlled. The ceramic substrate is preferably a silicon nitride substrate.

7. 发明公开

EP2006895A1 ELECTRONIC COMPONENT MODULE 有权
标题翻译： ELEKTRONISCHES KOMPONENTENMODUL
公开(公告)号：EP2006895A1
公开(公告)日：2008-12-24
申请号：EP07713551.5
申请日：2007-03-05
申请人： Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
发明人： KATO, Hiromasa , NABA, Takayuki , NAKAYAMA, Noritaka
IPC分类号： H01L21/52 , H01B1/02 , H01L25/07 , H01L25/18 , H01L35/30 , H05K3/34
CPC分类号： H01L35/30 , H01L23/3735 , H01L23/473 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29124 , H01L2224/29139 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/83192 , H01L2224/838 , H01L2224/83805 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/351 , H05K1/0201 , H05K1/18 , H05K3/3463 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/01039
摘要： An electronic component module 1 has a circuit board 2 in which metal plates 5 and 7 are bonded to both surfaces of a ceramic substrate 3, and an electronic component 9 that is bonded to at least one surface of the metal plate 5 and is operable at least 125°C. The electronic component 9 is bonded to the metal plate 5 via a brazing material layer 8 having a higher melting point than a operating temperature of the electronic component 9.
摘要翻译：电子部件模块1具有电路基板2，金属板5,7与陶瓷基板3的两面接合，电子部件9与金属板5的至少一个面接合，至少125°C。电子部件9经由比电子部件9的工作温度高的熔点的钎料层8与金属板5接合。

8. 发明公开

EP3486942A1 CERAMIC CIRCUIT BOARD AND SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：EP3486942A1
公开(公告)日：2019-05-22
申请号：EP17827739.8
申请日：2017-07-14
申请人： Kabushiki Kaisha Toshiba, Inc. , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , KATO, Hiromasa , YANO, Keiichi
IPC分类号： H01L23/13 , C04B37/02 , H01L23/15 , H01L23/36 , H05K1/02
摘要： A ceramic circuit board comprises: a ceramic substrate with a 1.0 mm thickness or less including a first surface and a second surface, the first surface including a first area and a second area; a first metal plate joined to the first area; and a second metal plate joined to the second surface. The second area has a first waviness profile along a first side of the first surface, the first waviness profile having one extreme value or less. The second area has a second waviness profile along a second side of the first surface, the second waviness profile has not less than two nor more than three extreme values.

9. 发明公开

EP3358614A1 CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3358614A1
公开(公告)日：2018-08-08
申请号：EP16850544.4
申请日：2016-08-01
申请人： Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
发明人： NABA, Takayuki , KATO, Hiromasa , UMEHARA, Masashi
IPC分类号： H01L23/13 , H05K1/02
CPC分类号： H01L23/3735 , H01L21/4807 , H05K1/0265 , H05K1/0271 , H05K1/0306 , H05K3/06 , H05K3/388 , H05K2201/0338 , H05K2201/0355 , H05K2201/10272
摘要： To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

10. 发明公开

EP3255666A1 SILICON NITRIDE CIRCUIT SUBSTRATE AND ELECTRONIC COMPONENT MODULE USING SAME 有权
标题翻译：硅氮化物电路衬底和使用该衬底的电子元件模块
公开(公告)号：EP3255666A1
公开(公告)日：2017-12-13
申请号：EP16746466.8
申请日：2016-01-26
申请人： Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
发明人： KATO, Hiromasa , KITAMORI, Noboru , NABA, Takayuki , UMEHARA, Masashi
IPC分类号： H01L23/36 , H01L23/13 , H05K1/03
CPC分类号： H01L23/3735 , H01L21/4807 , H01L23/13 , H01L23/36 , H05K1/03
摘要： The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1 - t2| ≥ 0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved.
摘要翻译：本发明提供一种氮化硅电路板，其中金属板被附着在三点弯曲强度为500MPa或更高的氮化硅衬底的前侧和后侧上，其中假设前侧上的金属板的厚度用t1表示后侧的金属板的厚度，用t2表示数值关系：| t1-t2 | ≥0.30mm，并且在氮化硅衬底中形成翘曲，使得氮化硅衬底在前侧或后侧中的一侧上朝向金属板凸起; 氮化硅基板的长边方向和短边方向的翘曲量均在0.01〜1.0mm的范围内。氮化硅基板的纵向宽度（L1）优选为10〜200mm的范围，氮化硅基板的横向宽度（L2）优选为10〜200mm的范围。由于上述结构，即使氮化硅电路板在氮化硅衬底的前侧和后侧上附着的金属板之间具有大的厚度差异，TCT性能也可以大大提高。

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