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1. 发明公开

EP2784831A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：EP2784831A1
公开(公告)日：2014-10-01
申请号：EP14168448.0
申请日：2009-09-08
申请人： Kabushiki Kaisha Toshiba
发明人： Shimokawa, Kazuo , Koyanagawa, Takashi , Miyagi, Takeshi , Happoya, Akihiko , Higuchi, Kazuhito , Kitani, Tomoyuki
IPC分类号： H01L33/00 , H01L33/50 , H01L33/62 , H01L33/38 , H01L33/44
CPC分类号： H01L33/507 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is an optical semiconductor device includes: a light-emitting layer (2) having a first main surface (M1), a second main surface (M2) opposed to the first main surface, a first electrode (7a) and a second electrode (7b) which are formed on the second main surface; a fluorescent layer (4) provided on the first main surface; a light-transmissive layer (5) provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post (8a) provided on the first electrodes; a second metal post (8b) provided on the second electrode; a sealing layer (10) provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer (11a) provided on the exposed end of the first metal post; and a second metal layer (11b) provided on the exposed end of the second metal post.
摘要翻译：本发明提供一种光半导体装置，其包括：具有第一主面（M1），与第一主面相对的第二主面（M2），第一电极（7a）和第二电极（7a）的发光层（2） 7b），其形成在所述第二主表面上; 设置在第一主表面上的荧光层（4）设置在荧光层上并由透光无机材料制成的透光层（5）设置在所述第一电极上的第一金属柱（8a）设置在第二电极上的第二金属柱（8b）设置在所述第二主表面上的密封层（10），以密封所述第一金属柱和所述第二金属柱中的相应第一金属柱和第二金属柱的一端暴露; 设置在第一金属柱的暴露端上的第一金属层（11a）和设置在第二金属柱的暴露端上的第二金属层（11b）。

2. 发明公开

EP2903039A1 Semiconductor device and method for manufacturing the same 有权转让
标题翻译：半导体装置及其制造方法
公开(公告)号：EP2903039A1
公开(公告)日：2015-08-05
申请号：EP15157374.8
申请日：2009-09-08
申请人： Kabushiki Kaisha Toshiba
发明人： Shimokawa, Kazuo , Koyanagawa, Takashi , Miyagi, Takeshi , Happoya, Akihiko , Higuchi, Kazuhito , Kitani, Tomoyuki
IPC分类号： H01L33/00 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/38 , H01L33/44
CPC分类号： H01L33/507 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is an optical semiconductor device includes: a light-emitting layer (2) having a first main surface (M1), a second main surface (M2) opposed to the first main surface, a first electrode (7a) and a second electrode (7b) which are formed on the second main surface; a fluorescent layer (4) provided on the first main surface; a light-transmissive layer (5) provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post (8a) provided on the first electrodes; a second metal post (8b) provided on the second electrode; a sealing layer (10) provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer (11a) provided on the exposed end of the first metal post; and a second metal layer (11b) provided on the exposed end of the second metal post
摘要翻译：本发明提供一种光半导体装置，其包括：具有第一主面（M1），与第一主面相对的第二主面（M2），第一电极（7a）和第二电极（7a）的发光层（2） 7b），其形成在所述第二主表面上; 设置在第一主表面上的荧光层（4）设置在荧光层上并由透光无机材料制成的透光层（5）设置在所述第一电极上的第一金属柱（8a）设置在第二电极上的第二金属柱（8b）设置在所述第二主表面上的密封层（10），以密封所述第一金属柱和所述第二金属柱中的相应第一金属柱和第二金属柱的一端暴露; 设置在第一金属柱的暴露端上的第一金属层（11a）和设置在第二金属柱的暴露端上的第二金属层（11b）

3. 发明公开

EP2194586A1 Semiconductor device and method for manufacturing the same 无效
标题翻译： Halbleiterbauelement和Verfahren zu seiner Herstellung
公开(公告)号：EP2194586A1
公开(公告)日：2010-06-09
申请号：EP09169704.5
申请日：2009-09-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shimokawa, Kazuo , Koyanagawa, Takashi , Miyagi, Takeshi , Happoya, Akihiko , Higuchi, Kazuhito , Kitani, Tomoyuki
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is an optical semiconductor device includes: a light-emitting layer (2) having a first main surface (M1), a second main surface (M2) opposed to the first main surface, a first electrode (7a) and a second electrode (7b) which are formed on the second main surface; a fluorescent layer (4) provided on the first main surface; a light-transmissive layer (5) provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post (8a) provided on the first electrodes; a second metal post (8b) provided on the second electrode; a sealing layer (10) provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer (11a) provided on the exposed end of the first metal post; and a second metal layer (11b) provided on the exposed end of the second metal post.
摘要翻译：本发明提供一种光半导体装置，具备：具有第一主表面（M1）的发光层（2），与第一主表面相对的第二主表面（M2），第一电极（7a）和第二电极 7b），其形成在第二主表面上; 设置在所述第一主表面上的荧光层（4）设置在荧光层上并由透光性无机材料制成的透光层（5）设置在所述第一电极上的第一金属柱（8a）设置在第二电极上的第二金属柱（8b）密封层（10），设置在所述第二主表面上，以密封在所述第一和第二金属柱中，所述第一和第二金属柱的一端暴露; 设置在第一金属柱的露出端上的第一金属层（11a）以及设置在第二金属柱的暴露端上的第二金属层（11b）。

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