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1. 发明授权

EP2905356B1 METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT 有权
公开(公告)号：EP2905356B1
公开(公告)日：2018-10-10
申请号：EP12886098.8
申请日：2012-10-31
申请人： JX Nippon Mining & Metals Corporation
发明人： SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko , KODAMA, Atsushi
IPC分类号： C23C30/00 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C19/05 , C25D3/02 , C25D3/12 , C25D7/00 , H01B5/02 , H01R13/03
CPC分类号： C22C5/06 , B32B15/01 , C22C5/02 , C22C5/08 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C28/00 , C23C28/021 , C25D3/04 , C25D3/18 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/562 , C25D3/60 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/505 , C25D7/00
摘要： There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 µm, and the middle layer (B layer) 13 has a thickness larger than 0.3 µm.

2. 发明授权

EP2868776B1 ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL 有权
标题翻译：电子元件金属材料及其制造方法，以及使用所述电子元件金属材料的连接器端子，连接器和电子元件
公开(公告)号：EP2868776B1
公开(公告)日：2017-05-17
申请号：EP13809664.9
申请日：2013-06-27
申请人： JX Nippon Mining & Metals Corporation
发明人： SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko , KODAMA, Atsushi
IPC分类号： C25D7/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C13/00 , C22C28/00 , C25D5/10 , C25D5/50 , H01B1/02 , H01B5/02 , H01R13/03 , C25D5/48 , C25D9/06 , B32B15/01 , C25D11/36 , C23C18/16 , C23C28/02 , C25D3/12 , C25D3/18 , C25D3/30 , C25D3/38 , C25D3/46
CPC分类号： H01R13/03 , B32B15/01 , C22C5/06 , C23C18/165 , C23C18/1651 , C23C18/1882 , C23C28/021 , C25D3/12 , C25D3/18 , C25D3/30 , C25D3/38 , C25D3/46 , C25D5/10 , C25D5/48 , C25D5/50 , C25D5/505 , C25D7/00 , C25D9/06 , C25D11/36 , H01B1/02 , H01R12/716 , H05K1/184 , Y10T428/12681 , Y10T428/12708 , Y10T428/12715

3. 发明公开

EP2905356A1 METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT, AND METHOD FOR PRODUCING SAME 有权
标题翻译：金属材料FOR USE电子组件和方法及其制造
公开(公告)号：EP2905356A1
公开(公告)日：2015-08-12
申请号：EP12886098.8
申请日：2012-10-31
申请人： JX Nippon Mining & Metals Corporation
发明人： SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko , KODAMA, Atsushi
IPC分类号： C23C30/00 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C19/05 , C25D3/02 , C25D3/12 , C25D7/00 , H01B5/02 , H01R13/03
CPC分类号： C22C5/06 , B32B15/01 , C22C5/02 , C22C5/08 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C28/00 , C23C28/021 , C25D3/04 , C25D3/18 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/562 , C25D3/60 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/505 , C25D7/00
摘要： There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 µm, and the middle layer (B layer) 13 has a thickness larger than 0.3 µm.
摘要翻译：存在其中具有低的能力插入/可萃取，低晶须成形性，高耐久性，以及用于金属材料的制造方法的电子部件的金属材料提供。所述电子部件的金属材料10包括上形成层14构成在基体材料11最外表面层的基体材料11形成的Sn，In或到其合金，和基座之间设置构成的中间层B层13 材料11和A层14以及形成银，金，铂，钯，钌，铑，锇，铱或以它们的合金，worin最外表面层（A层）14的厚度为0.002〜0.2微米，并且中间层（B层）13的厚度大于0.3微米的。

4. 发明公开

EP2899298A1 SURFACE-TREATED PLATED MATERIAL AND METHOD FOR PRODUCING SAME, AND ELECTRONIC COMPONENT 审中-公开
标题翻译：表面处理的电镀材料和方法其制造，及电子零件
公开(公告)号：EP2899298A1
公开(公告)日：2015-07-29
申请号：EP13838846.7
申请日：2013-07-05
申请人： JX Nippon Mining & Metals Corporation
发明人： KODAMA, Atsushi , SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko
IPC分类号： C23C28/00 , C25D5/12 , C25D5/48
CPC分类号： C25D3/18 , B32B15/01 , C09D4/00 , C22C5/06 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/06 , C22C13/00 , C22C13/02 , C22C19/03 , C23C10/28 , C23C28/021 , C25D3/30 , C25D3/32 , C25D3/46 , C25D5/12 , C25D5/48 , C25D5/505 , C25D7/00 , C25D9/06 , H01R12/716 , H01R13/03 , Y10T428/12493 , Y10T428/12722 , Y10T428/12896
摘要： The present invention provides a surface treated plating material being suppressed in the occurrence of whiskers, maintaining satisfactory solderability and satisfactory contact resistance even when exposed to a high temperature environment, and being low in the terminal-connector insertion force. The surface treated plating material is a plating material including: a metal base material; a lower layer constituted with Ni or Ni alloy plating; and an upper layer constituted with Sn or Sn alloy plating, wherein the lower layer and the upper layer are sequentially formed on the metal base material; P and N are present on the upper layer surface; the amounts of the P and N elements deposited on the upper layer surface are respectively P: 1 × 10 -11 to 4 × 10 -8 mol/cm 2 , N: 2 × 10 -12 to 8 × 10 -9 mol/cm 2 .
摘要翻译：本发明提供了在晶须的产生被抑制的表面处理电镀材料，保持令人满意的可焊性和接触电阻良好，即使暴露在高温环境下，以及在端子插入力连接器为低。治疗电镀材料的表面是包括镀覆材料：一金属基材; 下层与Ni或Ni合金电镀构成; 并在上层与Sn或Sn合金镀覆组成，worin下层和上层上的金属基体材料上依次形成; P和N存在于上表面层上; 在P沉积在上层表面上的量和N的元素分别为，P：1×10 -11至4×10 -8摩尔/厘米2，N 2×10 -12〜8×10 -9摩尔/厘米第二

5. 发明公开

EP2868776A1 ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL 有权
标题翻译：金属材料电子元器件及其制造方法和相关单位SEND，连接器和电子元件与本金属材料电子元器件
公开(公告)号：EP2868776A1
公开(公告)日：2015-05-06
申请号：EP13809664.9
申请日：2013-06-27
申请人： JX Nippon Mining & Metals Corporation
发明人： SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko , KODAMA, Atsushi
IPC分类号： C25D7/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C13/00 , C22C28/00 , C25D5/10 , C25D5/50 , H01B1/02 , H01B5/02 , H01R13/03
CPC分类号： H01R13/03 , B32B15/01 , C22C5/06 , C23C18/165 , C23C18/1651 , C23C18/1882 , C23C28/021 , C25D3/12 , C25D3/18 , C25D3/30 , C25D3/38 , C25D3/46 , C25D5/10 , C25D5/48 , C25D5/50 , C25D5/505 , C25D7/00 , C25D9/06 , C25D11/36 , H01B1/02 , H01R12/716 , H05K1/184 , Y10T428/12681 , Y10T428/12708 , Y10T428/12715
摘要： The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; an upper layer formed on the intermediate layer, the upper layer being constituted with an alloy composed of one or two or more selected from the constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; an outermost layer formed on the upper layer, the upper layer being constituted with one or two selected from the constituent element group C, namely, the group consisting of Sn and In, wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.01 µm or more and less than 0.50 µm; the thickness of the upper layer is less than 0.50 µm; and the thickness of the outermost layer is 0.005 µm or more and less than 0.30 µm.
摘要翻译：本发明提供金属材料的电子部件，其具有低度晶须形成，低粘着磨损性和高耐久性，并且连接器端子，连接器和使用搜索的金属材料的电子元器件。用于电子部件的金属材料，包括：基底材料; 形成在基体材料的下层，与从构成元素A组中选择的一种或两种或更多种被构成的下层，即，该组包括Ni，铬，锰，铁，钴和铜; 在形成在所述下层上的中间层，与从构成元素B组中选择的一种或两种或更多种被构成的中间层，即，选自由银，金，铂，钯，钌，铑，Os和Ir的; 到形成在中间层上的上层，上层被以构成在一个或两个或更多个从所述组成元素族乙选择的组成合金，即，选自由银，金，铂，钯，钌，铑的， Os和Ir和一个或两个从构成元素组C中，即，该组由Sn和In的; 在形成在上层上最外层，所述上层被从构成元素C组中选择的一个或两个构成，即，该组由Sn和In的，worin下层的厚度为0:05微米或更大且小于下午5:00微米; 中间层的厚度为0点01微米或更大且小于0:50微米; 上层的厚度为小于0:50微米; 和最外层的厚度为0005微米或更大且小于0:30微米。

6. 发明授权

EP2759622B1 METAL MATERIAL FOR ELECTRONIC COMPONENTS 有权转让
公开(公告)号：EP2759622B1
公开(公告)日：2018-11-28
申请号：EP12834344.9
申请日：2012-09-10
申请人： JX Nippon Mining & Metals Corporation
发明人： SHIBUYA, Yoshitaka , FUKAMACHI, Kazuhiko , KODAMA, Atsushi
IPC分类号： B32B15/01 , C22C5/06 , C22C5/08 , C22C5/10 , C22C9/02 , C22C9/04 , C22C13/02 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/06 , C22C38/00 , C25D5/10 , C25D5/12 , C25D5/50 , C23C18/16 , H05K3/24 , H01B1/02 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/50 , C25D3/56 , C25D3/62 , C25D3/64 , H01R13/03 , H05K1/11
CPC分类号： H01B1/02 , B32B15/01 , B32B15/018 , C22C5/06 , C22C5/08 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/06 , C22C38/00 , C23C18/1651 , C23C18/1692 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/50 , C25D3/567 , C25D3/62 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/505 , H01R13/03 , H05K1/117 , H05K1/118 , H05K3/244 , H05K2201/0341 , Y10T428/12681 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722
摘要： There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 µm.

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