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    • 3. 发明公开
    • Charged-particle beam apparatus equipped with aberration corrector
    • Apparatfürgeladene Teilchen mit Aberrationskorrektur
    • EP1313125A1
    • 2003-05-21
    • EP02257934.6
    • 2002-11-18
    • Jeol Ltd.
    • Matsuya, MiyukiKazumori, Hiroyoshi
    • H01J37/153H01J37/26H01J37/252
    • H01J37/153H01J2237/1516H01J2237/153H01J2237/1534
    • Particle-beam apparatus is realized which is equipped with an aberration corrector capable of controlling the angular aperture of a particle beam after performing aberration correction. The corrector comprises four stages of electrostatic quadrupole elements, two stages of magnetic quadrupole elements for superimposing a magnetic potential distribution analogous to the electric potential distribution created by the two central stages of the electrostatic quadrupole elements, and four stages of electrostatic octupole elements for superimposing an octupole electric potential on the electric potential distribution created by the four stages of electrostatic quadrupole elements. An objective lens is located downstream of the corrector. An objective aperture is located upstream of the corrector. An angular aperture control lens is located downstream of the objective aperture to control the angular aperture of the probe hitting a specimen surface. This control lens makes it possible to correct aberrations more stably and to set an optimum angular aperture when the operator modifies accelerating voltage, working distance, or probe current through a manual operation-and-display portion.
    • 实现了粒子束装置,其具有能够在进行像差校正之后控制粒子束的角度孔径的像差校正器。 校正器包括四级静电四极元件,两级磁四极元件,用于叠加类似于由静电四极元件的两个中心级产生的电势分布的磁势分布,以及用于叠加静电四极元件的四级静电八极元件 由四级静电四极元件产生的电位分布上的八极电位。 物镜位于校正器的下游。 物镜孔位于校正器的上游。 角度孔径控制透镜位于物镜孔的下游,以控制探针撞击样品表面的角度孔径。 该控制透镜使得可以更稳定地校正像差,并且当操作者通过手动操作和显示部分修改加速电压,工作距离或探针电流时,设置最佳角度孔径。
    • 4. 发明公开
    • Electron beam apparatus and method of operating the same
    • Elektronenstrahlvorrichtung und Verfahren zu deren Ansteuerung
    • EP2197016A2
    • 2010-06-16
    • EP09252728.2
    • 2009-12-04
    • JEOL Ltd.
    • Kazumori, Hiroyoshi
    • H01J37/147H01J37/244H01J37/28
    • H01J37/153H01J37/244H01J37/28H01J2237/15H01J2237/2443H01J2237/24475H01J2237/2448
    • An electron beam apparatus is offered which can well detect backscattered electrons (22) or both kinds of backscattered electrons and secondary electrons if an electron detector (7) is disposed above an objective lens (6) in the apparatus. The electron beam apparatus has an electron beam source (1) for emitting an electron beam (21) accelerated by a given accelerating voltage, the objective lens (6) for focusing the electron beam (21) emitted from the beam source (1) onto a specimen (20), scan coils (5) for scanning the focused beam (21) over the specimen (20), and the electron detector (7) located above the objective lens (6) and provided with a hole permitting passage of the beam (21). The detector (7) has an electrode (9) for producing an electric field that attracts the electrons (22) produced from the specimen (20) in response to the electron beam (21) irradiation. Correction coils (4) for correcting deflection of the beam (21) caused by the electric field are located below the detector (7).
    • 如果电子检测器(7)设置在设备中的物镜(6)上方,则提供一种电子束装置,其可以很好地检测反向散射电子(22)或两种背散射电子和二次电子。 电子束装置具有用于发射通过给定的加速电压加速的电子束(21)的电子束源(1),用于将从光束源(1)发射的电子束(21)聚焦的物镜(6) 用于在所述试样(20)上方扫描聚焦光束(21)的扫描线圈(5)和位于所述物镜(6)上方的所述电子检测器(7)的试样(20) 梁(21)。 检测器(7)具有用于响应于电子束(21)照射而产生吸引由试样(20)产生的电子(22)的电场的电极(9)。 用于校正由电场引起的光束(21)的偏转的校正线圈(4)位于检测器(7)的下方。