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1. 发明公开

EP1383164A1 FinFET device and a method for manufacturing such device 审中-公开
标题翻译： FinFET - Anordnung und Verfahren zur Herstellung einer solchen Anordnung
公开(公告)号：EP1383164A1
公开(公告)日：2004-01-21
申请号：EP02447135.1
申请日：2002-07-17
申请人： Interuniversitair Micro-Elektronica Centrum (IMEC)
发明人： Collaert, Nadine , De Meyer, Kristin
IPC分类号： H01L21/336 , H01L29/423 , H01L27/12
CPC分类号： H01L29/785 , H01L21/823821 , H01L21/823828 , H01L21/845 , H01L27/12 , H01L27/1211 , H01L29/42384 , H01L29/66545 , H01L29/78636
摘要： The present invention is related to a method for forming a FinFET comprising the steps of:

providing a substrate (1), comprising a semiconductor layer (2),
forming in said semiconductor layer (2) active areas (4) insulated from each other by field areas (5),
forming within at least one of said active areas (4) on said semiconductor layer (2) at least one dummy gate (9),
forming, within said at least one of said active areas (4) and self aligned to said dummy gate (9), source (6) and drain (7) regions in said semiconductor layer (2),
covering said substrate (1) with an insulating layer (16) leaving said dummy gate (9) exposed,
forming an open cavity (25) in said insulating layer (16) and in said semiconductor layer (2) by patterning said dummy gate (9) and said semiconductor layer (2) to form respectively a dummy fin (19) and a semiconductor fin (17) aligned to said dummy fin (19), both fins (17), (19) extending from the source (6) to the drain (7) of said at least one active area (4), thereby exposing said semiconductor layer (2)
摘要翻译：本发明涉及一种用于形成FinFET的方法，包括以下步骤：提供包括半导体层（2）的衬底（1），所述衬底（1）在所述半导体层（2）中形成通过相互绝缘的有源区（4）场区域（5），在所述半导体层（2）上的至少一个所述有源区（4）内形成至少一个虚拟栅极（9），在所述至少一个所述有源区域（4）和自与所述半导体层（2）中的所述伪栅极（9），源极（6）和漏极（7）区域对准，用绝缘层（16）覆盖所述衬底（1），使绝缘栅极（9）露出，形成通过对所述伪栅极（9）和所述半导体层（2）进行构图来形成所述绝缘层（16）和所述半导体层（2）中的开放空腔（25），以形成分别为虚拟鳍片（19）和半导体鳍片与所述虚拟翅片（19）对准的两个翅片（17），（19）从所述源（6）延伸到所述至少一个活动区域（4）的漏极（7）从而暴露所述半导体层（2）

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