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1. 发明公开

EP0349703A2 Multilayer field-effect transistor 失效
标题翻译： Mehrschichtiger Feldeffekt晶体管。
公开(公告)号：EP0349703A2
公开(公告)日：1990-01-10
申请号：EP89103350.8
申请日：1989-02-25
申请人： International Business Machines Corporation
发明人： Smith III, Theoron P.
IPC分类号： H01L29/76 , H01L29/10
CPC分类号： H01L23/482 , H01L29/1029 , H01L29/41 , H01L29/772 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A multilayer semiconductor structure is disclosed having a plurality of conducting layers (16, 20) separated by a barrier layer (18). A common contact (24) extends from an upper exposed surface (22) to all the layers of the device and a surface contact (26) extends from the upper surface (22) into an uppermost conducting layer (20). Each of the conducting layers (16, 20) defines an independent channel of current flow thereby providing at least two independent current paths (40, 42) between the common contact (24) and the surface contact (26). A Schottky barrier electrode (32) is disposed on the surface (22) of the structure between the common and surface contacts and is operable to selectively deplete charge carriers within the conducting layers (16, 20) sequentially to cause current to flow through the desired channel. The current flow in each channel results in an independent I/V characteristic curve in which one channel is linear and the other channel is non-linear.
摘要翻译：公开了一种多层半导体结构，其具有由阻挡层（18）分开的多个导电层（16,20）。公共接触件（24）从上暴露表面（22）延伸到器件的所有层，并且表面接触件（26）从上表面（22）延伸到最上面的导电层（20）中。每个导电层（16,20）限定电流的独立通道，从而在公共接触件（24）和表面接触件（26）之间提供至少两个独立的电流通路（40,42）。肖特基势垒电极（32）设置在共同和表面触点之间的结构的表面（22）上，并且可操作以依次选择性地耗尽导电层（16,20）内的电荷载流子，以使电流流过期望的渠道。每个通道中的电流导致独立的I / V特性曲线，其中一个通道是线性的，另一个通道是非线性的。

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