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1. 发明公开

EP0326531A2 Improved RF plasma processing apparatus 失效
标题翻译： VorrichtungfürRF-Plasma-Verarbeitung。
公开(公告)号：EP0326531A2
公开(公告)日：1989-08-02
申请号：EP89850011.1
申请日：1989-01-16
申请人： International Business Machines Corporation
发明人： Hendrix, Howard Allan , Schmidt, Howard William, Jr. , Ward, Ernest Spencer
IPC分类号： C23C14/40 , H01J37/34
CPC分类号： H01J37/3441 , H01J37/34
摘要： A sputtering apparatus for coating a substrate comprising a first electrode (14) for supporting a suitable target material and a second electrode (16′) for supporting a substrate, upon which a coating is deposited. A source (22) of RF power is connected to impose an RF voltage across the electrodes to produce a glow discharge in the space between the electrodes. A shield (20) is provided surrounding the peripheral edges and the back of the second electrode, and this shield is spaced a substantial distance from the back of the electrode. Electrical insulating material is placed in the space between the shield and the back of the second electrode with a small gap between the electrical insulating material and the shield. The configuration of the shield, the insulating material, and the second electrode eliminates spurious sputtering from the peripheral and back regions of the second electrode so that very high power levels can be achieved and sputtering can be done very efficiently at high sputtering rates.
摘要翻译：一种用于涂覆基材的溅射装置，包括用于支撑合适的目标材料的第一电极（14）和用于支撑基材的第二电极（16分钟），在其上沉积涂层。 RF功率源（22）被连接以在电极两端施加RF电压，以在电极之间的空间中产生辉光放电。设置围绕第二电极的周边边缘和背面的屏蔽件（20），并且该屏蔽件与电极的背面隔开相当长的距离。电绝缘材料被放置在屏蔽件和第二电极的背面之间的空间中，在电绝缘材料和屏蔽之间具有小的间隙。屏蔽层，绝缘材料和第二电极的结构消除了来自第二电极的周边区域和后部区域的杂散溅射，从而可以实现非常高的功率水平，并且可以在高溅射速率下非常有效地进行溅射。

2. 发明授权

EP0326531B1 Improved RF plasma processing apparatus 失效
标题翻译：改进的射频等离子体处理设备
公开(公告)号：EP0326531B1
公开(公告)日：1993-09-22
申请号：EP89850011.1
申请日：1989-01-16
申请人： International Business Machines Corporation
发明人： Hendrix, Howard Allan , Schmidt, Howard William, Jr. , Ward, Ernest Spencer
IPC分类号： C23C14/40 , H01J37/34
CPC分类号： H01J37/3441 , H01J37/34

3. 发明公开

EP0326531A3 Improved RF plasma processing apparatus 失效
标题翻译：改进的射频等离子体加工设备
公开(公告)号：EP0326531A3
公开(公告)日：1990-08-22
申请号：EP89850011.1
申请日：1989-01-16
申请人： International Business Machines Corporation
发明人： Hendrix, Howard Allan , Schmidt, Howard William, Jr. , Ward, Ernest Spencer
IPC分类号： C23C14/40 , H01J37/34
CPC分类号： H01J37/3441 , H01J37/34
摘要： A sputtering apparatus for coating a substrate comprising a first electrode (14) for supporting a suitable target material and a second electrode (16′) for supporting a substrate, upon which a coating is deposited. A source (22) of RF power is connected to impose an RF voltage across the electrodes to produce a glow discharge in the space between the electrodes. A shield (20) is provided surrounding the peripheral edges and the back of the second electrode, and this shield is spaced a substantial distance from the back of the electrode. Electrical insulating material is placed in the space between the shield and the back of the second electrode with a small gap between the electrical insulating material and the shield. The configuration of the shield, the insulating material, and the second electrode eliminates spurious sputtering from the peripheral and back regions of the second electrode so that very high power levels can be achieved and sputtering can be done very efficiently at high sputtering rates.

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