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1. 发明授权

EP0292436B1 High current conductors and high field magnets using anisotropic superconductors 失效
标题翻译：头具有各向异性超导体高电流和高场磁体
公开(公告)号：EP0292436B1
公开(公告)日：1999-11-24
申请号：EP88810313.2
申请日：1988-05-13
申请人： International Business Machines Corporation
发明人： Davidson, Arthur , Dinger, Timothy Rea , Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/12 , H01F6/06
CPC分类号： H01F6/06 , H01L39/143

2. 发明授权

EP0345441B1 High-Tc superconductor-gallate crystal structures 失效
标题翻译：高温超导体 - 玻璃水晶结构
公开(公告)号：EP0345441B1
公开(公告)日：1993-08-18
申请号：EP89106765.4
申请日：1989-04-15
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Giess, Edward August , Gupta, Arunava , Laibowitz, Robert Benjamin , O'Sullivan, Eugene John M. , Sandstrom, Robert Lee
IPC分类号： H01L39/24
CPC分类号： H01P3/085 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/143 , H01L39/2458 , H01L39/247 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10T29/49014
摘要： High-Tc oxide superconductive structures (22, 24) can be formed on gallate layers (18, 20), where the gallate layers (18, 20) include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. 'The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high-Tc superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.

3. 发明公开

EP0218119A2 Superconductor switching device 失效
标题翻译： Supraleitendes Schaltelement。
公开(公告)号：EP0218119A2
公开(公告)日：1987-04-15
申请号：EP86112662.1
申请日：1986-09-12
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Raider, Stanley Irwin
IPC分类号： H01L39/22 , H01L39/16
CPC分类号： H01L39/228 , H01L39/18
摘要： A switch is provided that introduces quasiparticles at an asymmetric location into a reduced cross-sectional area microbridge link (4) that is part of an output path. The quasiparticles nucleate a small region of normal resistivity and the normal region propagates to produce normal resistivity in the entire reduced cross-sectional area microbridge link (4). The asymmetry of the location provides input-output isolation. The high critical current, high resistivity material for the reduced cross-section member (4) provides high current and voltage gain and the small size provides high speed. In one structure, an input film conductor (5) is asymmetrically, centrally positioned in an insulator stack, and a microbridge link (4) is positioned on a bevelled side of the stack with the input conductor (5) in tunnelling relationship with part of the narrow portion of the microbridge link (4). Decoupling between input and output sufficient to permit one switch to drive several others is provided. Voltage gain can be sufficient to serve as an interface between superconducting devices and semiconductor circuitry.
摘要翻译：提供了一种开关，其将非对称位置处的准粒子引入到作为输出路径的一部分的减小的横截面微桥链路（4）中。准粒子在正常电阻率的小区域成核，并且正常区域在整个减少的横截面微桥链路（4）中传播以产生正常电阻率。位置的不对称提供输入输出隔离。用于减小横截面构件（4）的高临界电流，高电阻率材料提供高电流和电压增益，并且小尺寸提供高速度。在一种结构中，输入膜导体（5）不对称地居中定位在绝缘体堆叠中，并且微桥连杆（4）被定位在堆叠的倾斜侧上，输入导体（5）与部分微桥链路（4）的窄部分。提供足够允许一个开关驱动其他开关的输入和输出之间的去耦合。电压增益足以用作超导器件和半导体电路之间的接口。

4. 发明授权

EP0936622B1 Magnetic memory devices having multiple magnetic tunnel junctions therein 有权
标题翻译：具有多个磁隧道结的磁存储器件
公开(公告)号：EP0936622B1
公开(公告)日：2002-10-02
申请号：EP99300384.7
申请日：1999-01-20
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C29/74
摘要： Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.

5. 发明公开

EP0936622A3 Magnetic memory devices having multiple magnetic tunnel junctions therein 有权
标题翻译：具有多个磁隧道结的磁存储器件
公开(公告)号：EP0936622A3
公开(公告)日：2000-11-08
申请号：EP99300384.7
申请日：1999-01-20
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C29/74
摘要： Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.

6. 发明公开

EP0477495A1 Josephson integrated circuit 失效
标题翻译： Integrierter Josephson-Schaltkreis。
公开(公告)号：EP0477495A1
公开(公告)日：1992-04-01
申请号：EP91112385.9
申请日：1991-07-24
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Hu, Chao-Kun , Jaso, Mark Anthony , Ketchen, Mark Benjamin , Kleinsasser, Alan Willis , Pearson, Dale Jonathan
IPC分类号： H01L39/24
CPC分类号： H01L39/2493 , H01L27/18 , Y10S505/728 , Y10S505/82
摘要： A method for fabricating Josephson integrated circuits and the circuit is described incorporating the steps of depositing layers of different materials to form a trilayer Josephson junction, etching to define a plurality of trilayer areas (22, 23, 24), depositing dielectric material thereover, and chemical-mechanical polishing to planarize the dielectric material down to provide a coplanar surface (55) with the tops (56, 57, 58) of the trilayer areas for subsequent interconnection. The invention overcomes the problem of poor quality Josephson junctions, low Vm's, and crevices or gaps in the upper coplanar surface between the trilayer area and the surrounding dielectric material.
摘要翻译：描述了一种用于制造约瑟夫逊集成电路的方法和电路，其结合了沉积不同材料的层以形成三层约瑟夫逊结的步骤，蚀刻以限定多个三面体区域（22,23,24），在其上沉积介电材料，以及化学机械抛光以将介电材料平坦化，以提供与三层区域的顶部（56,57,58）的共面表面（55），用于随后的互连。本发明克服了质量差的约瑟夫逊结，低Vm以及三层区域和周围电介质材料之间的上共面的缝隙或间隙的问题。

7. 发明公开

EP0218119A3 Superconductor switching device 失效
标题翻译：超导体开关装置
公开(公告)号：EP0218119A3
公开(公告)日：1990-02-14
申请号：EP86112662.1
申请日：1986-09-12
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Raider, Stanley Irwin
IPC分类号： H01L39/22 , H01L39/16
CPC分类号： H01L39/228 , H01L39/18
摘要： A switch is provided that introduces quasiparticles at an asymmetric location into a reduced cross-sectional area microbridge link (4) that is part of an output path. The quasiparticles nucleate a small region of normal resistivity and the normal region propagates to produce normal resistivity in the entire reduced cross-sectional area microbridge link (4). The asymmetry of the location provides input-output isolation. The high critical current, high resistivity material for the reduced cross-section member (4) provides high current and voltage gain and the small size provides high speed. In one structure, an input film conductor (5) is asymmetrically, centrally positioned in an insulator stack, and a microbridge link (4) is positioned on a bevelled side of the stack with the input conductor (5) in tunnelling relationship with part of the narrow portion of the microbridge link (4). Decoupling between input and output sufficient to permit one switch to drive several others is provided. Voltage gain can be sufficient to serve as an interface between superconducting devices and semiconductor circuitry.

8. 发明授权

EP0936623B1 Magnetic tunnel junction devices 有权
标题翻译：磁性隧道结元件
公开(公告)号：EP0936623B1
公开(公告)日：2005-04-13
申请号：EP99300847.3
申请日：1999-02-04
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , G11C11/15 , G11C11/16

9. 发明授权

EP0454939B1 Oriented superconductors for AC power transmission 失效
标题翻译：基超导体的交流输电
公开(公告)号：EP0454939B1
公开(公告)日：1995-12-27
申请号：EP91100308.5
申请日：1991-01-11
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/143

10. 发明公开

EP0454939A3 Oriented superconductors for AC power transmission 失效
标题翻译：面向交流电力传输的超导体
公开(公告)号：EP0454939A3
公开(公告)日：1992-03-18
申请号：EP91100308.5
申请日：1991-01-11
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/143
摘要： A superconductive transmission line (20) is formed of mixed metallic oxide ceramic material, particularly Y₁Ba₂Cu₃O 7-x drawn epitaxially upon a substrate (76). The superconductive material has basal crystallographic planes (44) in alignment with copper oxide of the ceramic material. The planes (44) are parallel to the substrate (72). The transmission line (20) is constructed of a plurality of electrically conductive elements (38, 40, 56, 60), each of which is formed of the superconductive material. The conductive elements (38, 40, 56, 60) are arranged with the basal crystalline planes (44) parallel to an axis (46, 72) of the transmission line, along which axis power is to flow. Thereby, magnetic fields (48) induced by currents flowing in the conductive elements (38, 40, 56, 60) intersect the conductive elements (38, 40, 56, 60) perpendicularly to the basal crystallographic planes (44) to maximize the current which can flow while retaining linearity between magnetization and applied magnetic field. Thereby, alternating current can be transmitted by the transmission line without the introduction of hysteresis losses which would develop heat and quench the superconducting characteristic of the transmission line (20).

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