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1. 发明授权

EP1497030B1 VORRICHTUNG AUF BASIS VON PARTIELL OXIDIERTEM PORÖSEN SILIZIUM UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：基于装置的部分氧化FOR多孔硅和方法及其
公开(公告)号：EP1497030B1
公开(公告)日：2006-09-13
申请号：EP03720392.4
申请日：2003-03-28
申请人： Infineon Technologies AG
发明人： DERTINGER, Stephan , FRITZ, Michaela , FUCHS, Karin , HANEDER, Thomas , LEHMANN, Volker , MARTIN, Alfred , MÄRZ, Reinhard
IPC分类号： B01L3/00
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00286 , B01J2219/00497 , B01J2219/00511 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00621 , B01J2219/00626 , B01J2219/00659 , B01J2219/00677 , B01J2219/00707 , B01J2219/00711 , B01J2219/00722 , B01J2219/00725 , B01J2219/00729 , B01L3/50857 , C30B29/06 , C30B33/00 , C40B40/06 , C40B40/10 , C40B60/14 , G01N33/54373
摘要： The invention relates to a device comprising a planar macroporous support material based on silicon, which has a plurality of pores with a diameter ranging from 500 nm to 100 µm, distributed over at least one surface region, said pores extending in a continuous manner from one surface to the opposite surface of the support material. Said device comprises at least one region containing one or several pores with pore walls consisting of Si02, said region being surrounded by a frame that is arranged substantially parallel to the longitudinal axes of the pores, is open in the direction of the surface of the support material and consists of walls with a silicon core. The silicon core changes to silicon dioxide over the cross-section towards the exterior face of the walls that form the frame. The invention also relates to a method for producing said device. The inventive device is suitable for use as a base for a biochip base module in methods for detecting biochemical (bonding) reactions, in addition to analysing for this purpose enzymatic reactions, nucleic acid hybridizations, protein-protein interactions and other bonding reactions in the domain of genome, proteome or active substance research in the fields of biology and medicine.

2. 发明授权

EP1344222B1 VERFAHREN ZUM AUSLESEN UND SPEICHERN EINES ZUSTANDES AUS EINEM ODER IN EINEN FERROELEKTRISCHEN TRANSISTOR EINER SPEICHERZELLE UND SPEICHERMATRIX 有权
标题翻译：方法读取和保存的情况来自或在铁电晶体管的存储单元和存储矩阵
公开(公告)号：EP1344222B1
公开(公告)日：2004-10-20
申请号：EP01990313.7
申请日：2001-12-19
申请人： Infineon Technologies AG
发明人： GOEBEL, Holger , HOENIGSCHMID, Heinz , HOENLEIN, Wolfgang , HANEDER, Thomas , ULLMANN, Marc
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , Y10S977/943

3. 发明授权

EP1399262B1 PIPETTENVORRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG 有权
公开(公告)号：EP1399262B1
公开(公告)日：2004-10-13
申请号：EP02754726.4
申请日：2002-06-20
申请人： Infineon Technologies AG
发明人： FRITZ, Michaela , DERTINGER, Stephan , FUCHS, Karin , HANEDER, Thomas , HANKE, Hans-Christian , JENKNER, Martin , LEHMANN, Volker , PAULUS, Christian
IPC分类号： B01L3/02 , B01L3/00
CPC分类号： B81C1/00087 , B01L3/0241 , B81B2201/057
摘要： The invention relates to a device, especially for patch-clamping vesicles and/or for dispensing small, defined liquid amounts onto surfaces. The device is characterized in that in a substrate (2) at least one pipette in the form of a through hole (8) with a predetermined diameter is produced, a rim (16) of the through hole (8) protruding from a neighboring surface (4) of the substrate (2) by a predetermined length. The invention further relates to a method for producing the device, comprising the following steps: producing at least one hole (8), forming at least one modified surface layer (12) on at least the inner surfaces of the hole (8), selectively removing the substrate (2), the modified surface layer (12) not being substantially affected so that it protrudes from a surface (4) of the substrate and forms a protruding rim (16), and finishing the hole (8) as a through hole in a suitable process step.
摘要翻译：本发明涉及一种装置，尤其是用于贴片囊泡和/或用于将少量限定的液体量分配到表面上的装置。该装置的特征在于，在基板（2）中制造至少一个具有预定直径的通孔（8）形式的移液管，通孔（8）的边缘（16）从相邻表面（4）的预定长度。本发明还涉及一种用于制造该装置的方法，包括以下步骤：制造至少一个孔（8），在孔（8）的至少内表面上形成至少一个改性表面层（12），选择性地去除基底（2），修饰的表面层（12）基本上不受影响，使得它从基底的表面（4）突出并形成突出边缘（16），并且将孔（8）作为通孔在合适的工艺步骤中钻孔。

4. 发明公开

EP1344222A2 VERFAHREN ZUM AUSLESEN UND SPEICHERN EINES ZUSTANDES AUS EINEM ODER IN EINEN FERROELEKTRISCHEN TRANSISTOR EINER SPEICHERZELLE UND SPEICHERMATRIX 有权
标题翻译：方法读取和保存的情况来自或在铁电晶体管的存储单元和存储矩阵
公开(公告)号：EP1344222A2
公开(公告)日：2003-09-17
申请号：EP01990313.7
申请日：2001-12-19
申请人： Infineon Technologies AG
发明人： GOEBEL, Holger , HOENIGSCHMID, Heinz , HOENLEIN, Wolfgang , HANEDER, Thomas , ULLMANN, Marc
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , Y10S977/943
摘要： The status is read out from or stored in the ferroelectrical transistor. During the reading out or storing of the status, at least one further ferroelectrical transistor in the memory matrix is controlled such as to be operated in the depletion region thereof.

5. 发明公开

EP1312107A1 NIEDERTEMPERATUR-PROZESSIERUNG FERROELEKTRISCHER STRONTIUM-WISMUTH-TANTALAT-SCHICHTEN UND HERSTELLUNG FERROELEKTRISCHER BAUELEMENTE DARAUS 审中-公开
标题翻译：低温加工FERRO电动锶铋钽层和制造FERRO电气组件
公开(公告)号：EP1312107A1
公开(公告)日：2003-05-21
申请号：EP01962657.1
申请日：2001-08-14
申请人： Infineon Technologies AG
发明人： BACHHOFER, Harald , HANEDER, Thomas , SPINDLER, Oswald , WASER, Rainer
IPC分类号： H01L21/02 , H01L21/316
CPC分类号： H01L21/02197 , H01L21/02356 , H01L21/31691 , H01L28/55 , H01L28/56
摘要： The invention relates to a method for producing ferroelectric strontium bismuth tantalate comprising the compositions SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN). The element strontium normally found in a proportion of y = 2 is made available with an excess in the region of 2.1 ≤ y ≤ 3.0. It is thus possible to carry out the temperature treatment step for transferring the deposited material into the ferroelectric phase at a temperature T1 below 700 °C. The proportion of strontium x can be reduced from the nominal value thereof, 1, to 0.7.

6. 发明公开

EP1497651A1 WELLENLEITER IN PORÖSEN SUBSTRATEN 有权
标题翻译：纤维中多孔基材
公开(公告)号：EP1497651A1
公开(公告)日：2005-01-19
申请号：EP03720483.1
申请日：2003-04-16
申请人： Infineon Technologies AG
发明人： DERTINGER, Stephan , FRITZ, Michaela , FUCHS, Karin , HANEDER, Thomas , HANKE, Hans-Christian , MARTIN, Alfred , MÄRZ, Reinhard
IPC分类号： G01N33/543 , B01L3/00
CPC分类号： B01D67/0093 , B01D69/02 , B01J19/0046 , B01J2219/00286 , B01J2219/00497 , B01J2219/00511 , B01J2219/00576 , B01J2219/00605 , B01J2219/00612 , B01J2219/00621 , B01J2219/00626 , B01J2219/00628 , B01J2219/00637 , B01J2219/00641 , B01J2219/00659 , B01J2219/00677 , B01J2219/00707 , B01J2219/00711 , B01J2219/00722 , B01J2219/00725 , B01J2219/00729 , B01L3/5023 , B01L2300/0654 , B01L2300/12 , B82Y30/00 , C40B40/06 , C40B40/10 , C40B60/14 , G01N21/6452 , G01N21/648 , G02B6/122
摘要： The invention relates to a device comprising a planar support material (16), which has a plurality of pores (10) distributed over at least one surface region, said pores extending in a continuous manner from one surface (12) of the support material (16) to the opposite surface (14). The invention is characterised in that the pores (10) are delimited along their longitudinal axis by a pore limiting surface (18) of the pore walls (22) configured in the support material (16), that at least one part of the pore walls (22) has, at least in sections, a layered construction comprising a first layer (20) that forms the pore limiting surface (18) and a second layer (24) that is adjacent to the first layer (20) and located at a distance from the pore limiting surface (18) and that the refractive index nWaveguide of the first layer (20) is greater than the refractive index n2 of the second layer (24).

7. 发明公开

EP1497030A2 VORRICHTUNG AUF BASIS VON PARTIELL OXIDIERTEM PORÖSEN SILIZIUM UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：基于装置的部分氧化FOR多孔硅和方法及其
公开(公告)号：EP1497030A2
公开(公告)日：2005-01-19
申请号：EP03720392.4
申请日：2003-03-28
申请人： Infineon Technologies AG
发明人： DERTINGER, Stephan , FRITZ, Michaela , FUCHS, Karin , HANEDER, Thomas , LEHMANN, Volker , MARTIN, Alfred , MÄRZ, Reinhard
IPC分类号： B01L3/00
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00286 , B01J2219/00497 , B01J2219/00511 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00621 , B01J2219/00626 , B01J2219/00659 , B01J2219/00677 , B01J2219/00707 , B01J2219/00711 , B01J2219/00722 , B01J2219/00725 , B01J2219/00729 , B01L3/50857 , C30B29/06 , C30B33/00 , C40B40/06 , C40B40/10 , C40B60/14 , G01N33/54373
摘要： The invention relates to a device comprising a planar macroporous support material based on silicon, which has a plurality of pores with a diameter ranging from 500 nm to 100 µm, distributed over at least one surface region, said pores extending in a continuous manner from one surface to the opposite surface of the support material. Said device comprises at least one region containing one or several pores with pore walls consisting of Si02, said region being surrounded by a frame that is arranged substantially parallel to the longitudinal axes of the pores, is open in the direction of the surface of the support material and consists of walls with a silicon core. The silicon core changes to silicon dioxide over the cross-section towards the exterior face of the walls that form the frame. The invention also relates to a method for producing said device. The inventive device is suitable for use as a base for a biochip base module in methods for detecting biochemical (bonding) reactions, in addition to analysing for this purpose enzymatic reactions, nucleic acid hybridizations, protein-protein interactions and other bonding reactions in the domain of genome, proteome or active substance research in the fields of biology and medicine.

8. 发明公开

EP1399262A1 PIPETTENVORRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：移液器装置和方法及其
公开(公告)号：EP1399262A1
公开(公告)日：2004-03-24
申请号：EP02754726.4
申请日：2002-06-20
申请人： Infineon Technologies AG
发明人： FRITZ, Michaela , DERTINGER, Stephan , FUCHS, Karin , HANEDER, Thomas , HANKE, Hans-Christian , JENKNER, Martin , LEHMANN, Volker , PAULUS, Christian
IPC分类号： B01L3/02 , B01L3/00
CPC分类号： B81C1/00087 , B01L3/0241 , B81B2201/057
摘要： The invention relates to a device, especially for patch-clamping vesicles and/or for dispensing small, defined liquid amounts onto surfaces. The device is characterized in that in a substrate (2) at least one pipette in the form of a through hole (8) with a predetermined diameter is produced, a rim (16) of the through hole (8) protruding from a neighboring surface (4) of the substrate (2) by a predetermined length. The invention further relates to a method for producing the device, comprising the following steps: producing at least one hole (8), forming at least one modified surface layer (12) on at least the inner surfaces of the hole (8), selectively removing the substrate (2), the modified surface layer (12) not being substantially affected so that it protrudes from a surface (4) of the substrate and forms a protruding rim (16), and finishing the hole (8) as a through hole in a suitable process step.

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