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3. 发明公开

EP0555722A1 Hetero-superlattice PN junctions 失效
标题翻译： Übergittermit PN-Hetero-Übergang。
公开(公告)号：EP0555722A1
公开(公告)日：1993-08-18
申请号：EP93101518.4
申请日：1993-02-01
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong , Guha, Supratik , Munekata, Hiroo
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00
摘要： The present invention is a hetero superlattice pn junction. In particular, the invention combines n and p type superlattices (250, 200) into a single pn junction having a bandgap sufficient to create high frequency (i.e. blue or higher) light emission. Individual superlattices (250, 200) are formed using a molecular beam epitaxy process. This process creates thin layers (10, 30, 40, 60, 70, 90) of well material separated by thin layers (20, 50, 80) of barrier material. The well material is doped to create carrier concentrations and the barrier materials are chosen in combination with the thickness of the well materials to adjust the effective bandgap of the superlattice in order to create an effective wide bandgap material. The barrier material for the n and p type superlattices (250, 200) is different from the material used to form either of the two types of well layers. A particular embodiment of the present invention forms a first superlattice (250) from n type doped ZnSe well layers (10, 30) and undoped ZnMnSe barrier layers (20) and forms a second superlattice (200) from p type doped ZnTe well layers (70, 90) and undoped ZnMnSe barrier layers (80). The first and second superlattices (250, 200) are merged into a hetero superlattice pn junction. The thickness and composition of the individual well and barrier layers can be modified to adjust the effective bandgap of the pn junction. Therefore, a wide bandgap diode is formed from previously incompatible materials.
摘要翻译：本发明是异质超晶格pn结。特别地，本发明将n型和p型超晶格（250,200）组合成具有足以产生高频（即蓝色或更高）光发射的带隙的单个pn结。使用分子束外延法形成单个超晶格（250,200）。该过程产生由隔离材料的薄层（20,50,80）分隔开的材料的薄层（10,30,40,60,70,90）。掺杂阱材料以产生载流子浓度，并且与阱材料的厚度结合选择阻挡材料以调整超晶格的有效带隙，以便产生有效的宽带隙材料。用于n型和p型超晶格（250,200）的阻挡材料与用于形成两种类型的阱层中的任一种的材料不同。本发明的一个具体实施方案从n型掺杂的ZnSe阱层（10,30）和未掺杂的ZnMnSe阻挡层（20）形成第一超晶格（250），并从p型掺杂的ZnTe阱层形成第二超晶格（200） 70，90）和未掺杂的ZnMnSe阻挡层（80）。第一和第二超晶格（250,200）被合并成异质超晶格pn结。可以修改单个阱和阻挡层的厚度和组成以调节pn结的有效带隙。因此，宽带隙二极管由先前不兼容的材料形成。

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