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2. 发明公开

EP0583736A1 Plasma-enhanced magnetron-sputtered deposition of materials 失效
标题翻译： Niederschlag von材质手套PlasmaunterstützteMagnetronzerstäubung。
公开(公告)号：EP0583736A1
公开(公告)日：1994-02-23
申请号：EP93112909.2
申请日：1993-08-12
申请人： Hughes Aircraft Company
发明人： Nieh, Simon K. , Matossian, Jesse N. , Krajenbrink, Frans G.
IPC分类号： C23C14/00 , C23C14/32 , C23C14/34 , C23C14/35 , C23C14/42 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32706 , C23C14/0036 , C23C14/32 , C23C14/355 , H01J37/3405
摘要： Plasma-enhanced magnetron-sputtered deposition (PMD) of materials is employed for low-temperature deposition of hard, wear-resistant thin films, such as metal nitrides, metal carbides, and metal carbo-nitrides, onto large, three-dimensional, irregularly shaped objects (20) without the requirement for substrate manipulation. The deposition is done by using metal sputter targets (18) as the source of the metal and immersing the metal sputter targets (18) in a plasma (16) that is random in direction and fills the deposition chamber (12) by diffusion. The plasma (16) is generated from at least two gases, the first gas comprising an inert gas, such as argon, and the second gas comprising a nitrogen source, such a nitrogen, and/or a carbon source, such as methane. Simultaneous with the deposition, the substrate (20) is bombarded with ions from the plasma (16) by biasing the substrate (20) negative with respect to the plasma (16) to maintain the substrate temperature and control the film microstructure. The substrate (20), metal targets, and plasma (16) are all electrically decoupled from each other and from walls (14) of the deposition chamber (12), so as to provide independent electrical control of each component. The PMD process is applicable not only to the deposition of hard coatings, but also can be applied to any thin film process such as for electrically and thermally conductive coatings and optical coatings, requiring simultaneous, high-flux, ion-bombardment to control film properties.
摘要翻译：材料的等离子体增强型磁控溅射沉积（PMD）被用于将硬质耐磨薄膜如金属氮化物，金属碳化物和金属碳氮化物低温沉积到大的，三维的，不规则的（20），而不需要基板操作。通过使用金属溅射靶（18）作为金属源并将金属溅射靶（18）浸入在方向上随机的等离子体（16）中并通过扩散填充沉积室（12）来进行沉积。等离子体（16）由至少两种气体产生，第一气体包括惰性气体，例如氩气，第二气体包括氮源，氮气和/或碳源，例如甲烷。与沉积同时，通过使衬底（20）相对于等离子体（16）为负的方式使来自等离子体（16）的离子轰击衬底（20），以维持衬底温度并控制膜微观结构。基板（20），金属靶和等离子体（16）都彼此电隔离并与沉积室（12）的壁（14）电隔离，以便为每个部件提供独立的电控制。 PMD工艺不仅适用于硬涂层的沉积，而且可以应用于任何薄膜工艺，如用于导电和导热涂层和光学涂层，需要同时进行高通量离子轰击以控制膜性能。

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