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1. 发明公开

EP0898344A3 Near planar native-oxid VCSEL device and arrays 失效
标题翻译：几乎是平的VCSEL具有天然氧化物和多个激光
公开(公告)号：EP0898344A3
公开(公告)日：2000-04-26
申请号：EP98109847.8
申请日：1998-05-29
申请人： Hewlett-Packard Company
发明人： Schneider, Richard P., Jr. , Tan, Michael R.T. , Corzine, Scott W.
IPC分类号： H01S3/085 , H01S3/25
CPC分类号： H01S5/18313 , H01S5/2086 , H01S5/423
摘要： A VCSEL [100] with a near planar top surface on which the top electrode [111] is deposited. A VCSEL [100] according to the present invention includes a top electrode [111], a top mirror [115] having a top surface, a light generation region [120], and a bottom mirror [116] for reflecting light toward the top mirror [115]. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes [112] are etched down from the top surface of the VCSEL [100] to the layer [118] containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region [121] surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.

2. 发明公开

EP0898344A2 Near planar native-oxid VCSEL device and arrays 失效
标题翻译：快速飞溅VCSEL mitnatürlichem氧化物和Vielfachlaser
公开(公告)号：EP0898344A2
公开(公告)日：1999-02-24
申请号：EP98109847.8
申请日：1998-05-29
申请人： Hewlett-Packard Company
发明人： Schneider, Richard P., Jr. , Tan, Michael R.T. , Corzine, Scott W.
IPC分类号： H01S3/085
CPC分类号： H01S5/18313 , H01S5/2086 , H01S5/423
摘要： A VCSEL [100] with a near planar top surface on which the top electrode [111] is deposited. A VCSEL [100] according to the present invention includes a top electrode [111], a top mirror [115] having a top surface, a light generation region [120], and a bottom mirror [116] for reflecting light toward the top mirror [115]. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes [112] are etched down from the top surface of the VCSEL [100] to the layer [118] containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region [121] surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.
摘要翻译： VCSELÄ100Ü具有接近平坦的顶表面，顶部电极Ä111Ü沉积在其上。根据本发明的VCSELÄ100Ü包括顶部电极Ä111Ü，具有顶表面的顶部镜Ä115Ü，光产生区域Ä120Ü以及用于向上反射镜Ä115Ü反射光的底部镜Ä116Ü。至少一个反射镜包括具有不同折射率的多个平面导电层。此外，至少一层包括可氧化材料。为了将该层暴露于氧化剂（从而将材料转化为电绝缘体），从VCSELÄ100Ü的顶表面向包含可氧化材料的层Ä118Ü刻蚀了三个或更多个孔Ä112ü。然后将氧化剂引入这些孔的顶部。该层的部分氧化将该层转变成具有被电绝缘区域包围的导电区域的层，该导电区域位于顶部电极之下。

3. 发明公开

EP0871208A3 Reduction threading dislocations by amorphization and recrystalization 失效
标题翻译：通过非晶化和重结晶还原穿透位错
公开(公告)号：EP0871208A3
公开(公告)日：1998-12-16
申请号：EP97120023.3
申请日：1997-11-14
申请人： Hewlett-Packard Company
发明人： Chen, Yong , Schneider, Richard P., Jr. , Wang, Shih-Yun
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02664 , H01L21/02667
摘要： A method for providing an epitaxial layer[14] of a first material over a substrate[11] comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate[11]. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.
摘要翻译：一种用于在衬底[11]上提供第一材料的外延层[14]的方法，该衬底包括具有与第一材料不同的晶格常数的第二材料。在本发明的方法中，第一材料的第一层生长在衬底[11]上。处理第一层的一部分以使该部分变得无定形。然后在非晶部分的再结晶点以上但低于第一层的结晶部分的熔点的温度下使非晶部分退火，从而使第一层的非晶部分再结晶。通过离子注入可以使第一层变得无定形。该方法可以用于在蓝宝石上产生具有比常规沉积技术所产生的GaN层更少的位错的GaN层。

4. 发明公开

EP0871208A2 Reduction threading dislocations by amorphization and recrystalization 失效
标题翻译： Verminderung von Verspannungen durch Amorphisierung und Rekristallisation
公开(公告)号：EP0871208A2
公开(公告)日：1998-10-14
申请号：EP97120023.3
申请日：1997-11-14
申请人： Hewlett-Packard Company
发明人： Chen, Yong , Schneider, Richard P., Jr. , Wang, Shih-Yun
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02664 , H01L21/02667
摘要： A method for providing an epitaxial layer[14] of a first material over a substrate[11] comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate[11]. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.
摘要翻译：一种用于在衬底上提供第一材料外延层的方法，包括具有不同于第一材料的晶格常数的第二材料。在本发明的方法中，第一材料的第一层生长在基底上。处理第一层的一部分以使该部分成为无定形的。然后将非晶部分在高于非晶部分的再结晶点的温度下退火，但低于第一层的结晶部分的熔点，从而使第一层的非晶部分重结晶。第一层可以通过离子注入形成非晶态。该方法可以用于在具有比通过常规沉积技术产生的GaN层少的位错的蓝宝石上生成GaN层。

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