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1. 发明授权

EP1306943B1 Laser with a selectively changed current confining layer 失效
标题翻译：激光具有选择性地修改的电流限制层
公开(公告)号：EP1306943B1
公开(公告)日：2004-08-18
申请号：EP03075005.3
申请日：1998-03-04
申请人： HONEYWELL INC.
发明人： Guenter, James K. , Johnson, Ralph H.
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/1833 , H01S5/0425 , H01S5/18311 , H01S5/2081

2. 发明授权

EP1315216B1 Bandgap isolated light emitter 有权
标题翻译：分离的光发射装置的带隙
公开(公告)号：EP1315216B1
公开(公告)日：2005-01-19
申请号：EP02080608.9
申请日：1998-11-20
申请人： Honeywell Inc.
发明人： Johnson, Ralph H.
IPC分类号： H01L29/861 , H01L33/00 , H01S5/183
CPC分类号： H01S5/18341 , H01L33/105 , H01L33/145 , H01L33/465 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18369 , H01S5/2063 , H01S5/3054 , H01S5/3086 , H01S2301/173

3. 发明公开

EP1315216A3 Bandgap isolated light emitter 有权
标题翻译： Bandlückenisoliertelichtemittierende Vorrichtung
公开(公告)号：EP1315216A3
公开(公告)日：2003-10-22
申请号：EP02080608.9
申请日：1998-11-20
申请人： Honeywell Inc.
发明人： Johnson, Ralph H.
IPC分类号： H01L29/861 , H01L33/00 , H01S5/183
CPC分类号： H01S5/18341 , H01L33/105 , H01L33/145 , H01L33/465 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18369 , H01S5/2063 , H01S5/3054 , H01S5/3086 , H01S2301/173
摘要： A light emitting device having a first mirror (58), an active layer (64), a second mirror (68) and a beryllium implantation (82) resulting in a peripheral boundary of a waveguide (86) through the first and second mirrors (58, 68) the active layer (64) and the trapping layer (62). A P-N junction is situated within the implantation and the guide. The turn of the voltage is lower for the junction within the waveguide than that within ght implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer (62) between said first mirror (58) and said active layer (64), and a conduction layer (72) situated on the second mirror (68).
摘要翻译：一种具有第一反射镜（58），有源层（64），第二反射镜（68）和铍注入（82）的发光器件，其通过第一和第二反射镜（...）导致波导（86）的周边边界 58，68）有源层（64）和捕获层（62）。 P-N结位于植入和引导下。波导内的接合点的电压相对于ght注入内的电压的转换较低，导致电流在引导器内被施加到器件上的电压约束，该电压大于较低的结电压且小于较高的结电压。该装置还在所述第一反射镜（58）和所述有源层（64）之间具有电子捕获层（62），以及位于第二反射镜（68）上的导电层（72）。

4. 发明公开

EP1306943A1 Laser with a selectively changed current confining layer 失效
标题翻译：激光切割机Strombegrenzungsschicht
公开(公告)号：EP1306943A1
公开(公告)日：2003-05-02
申请号：EP03075005.3
申请日：1998-03-04
申请人： HONEYWELL INC.
发明人： Guenter, James K. , Johnson, Ralph H.
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/1833 , H01S5/0425 , H01S5/18311 , H01S5/2081
摘要： A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. The current confining layers are oxidized selectively to create electrically resistive material at the oxidized portions (100, 104) and by the oxidized and electrically resistive portions in order to direct current from one electrical contact pad (14,26) by passing through a preslected portion of an active region (20) of the laser. The laser structure can be a vertical cavity surface emitting laser. The device achieves the current confining and directing function without the need to use ion bombardment or implantation to provide the current confining structure within the body of the laser.
摘要翻译：激光结构设置有在氧化剂存在下经受氧化的材料的两个电流限制层。激光结构被成形为暴露电流限制层的边缘以允许边缘暴露于氧化剂。电流限制层被选择性地氧化以在氧化部分（100,104）和氧化和电阻部分处产生电阻材料，以便通过通过预置部分引导来自一个电接触焊盘（14,26）的电流的激光器的有源区域（20）。激光器结构可以是垂直腔表面发射激光器。该装置实现了电流限制和引导功能，而不需要使用离子轰击或植入来在激光器的主体内提供电流约束结构。

5. 发明公开

EP0492969A3 Ribbed and bossed pressure transducer 失效
标题翻译：压力和压力传感器
公开(公告)号：EP0492969A3
公开(公告)日：1993-10-27
申请号：EP91311770.1
申请日：1991-12-18
申请人： HONEYWELL INC.
发明人： Hines, John R. , Johnson, Ralph H.
IPC分类号： G01L9/00 , H01L41/04
CPC分类号： G01L9/0054 , G01L9/0042 , Y10T29/49103
摘要： A pressure transducer improves the linearity and sensitivity of an output signal from the pressure transducer; ribs 30 and bosses are introduced in the diaphragm region to collect the moments caused by a difference in pressure on the two sides of the diaphragm 15 and thus improve device sensitivity. In addition, the ribs and bosses prevent stretching of the piezoresistors 40 thus improving the linearity of the device. A constraint can also be included to improve the alignment of the piezoresistors thus improving the linearity of the device.

6. 发明公开

EP0437949A1 Double diffused lead-out for a semiconducteur device 失效
标题翻译： Doppeldiffundierte KontaktleitungfürHalbleiterbauelement。
公开(公告)号：EP0437949A1
公开(公告)日：1991-07-24
申请号：EP90313694.3
申请日：1990-12-14
申请人： HONEYWELL INC.
发明人： Johnson, Ralph H.
IPC分类号： H01L21/74 , H01L21/22
CPC分类号： H01L29/66166 , H01L21/743
摘要： A structure and a device which allow low resistance connection to internal circuit devices comprising a double diffused leadout is described. The first leadout diffusion (17,18) is lightly doped with dopant from either chemical group III or V to constitute N- or P- type material respectively. The lightly doped region has a high resistivity. The second diffusion (13,14) is diffused, using a dopant from the same chemical group as the first dopant, into the first diffusion. The second diffusion is diffused with enough dopant to constitute N + or P + material and has a low resistivity. The double diffused leadout creates a low resistance connection to the internal circuitry of an IC device while maintaining breakdown with the protective overlayer (31).
摘要翻译：描述了允许与包括双扩散引出件的内部电路装置的低电阻连接的结构和装置。第一引出扩散（17,18）分别用化学III或V族的掺杂剂轻掺杂以构成N-或P-型材料。轻掺杂区域具有高电阻率。使用与第一掺杂剂相同的化学基团的掺杂剂将第二扩散（13,14）扩散到第一扩散中。第二扩散部分用足够的掺杂剂扩散以构成N +或P +材料，并具有低电阻率。双扩散引出产生与IC器件的内部电路的低电阻连接，同时保护与保护覆层（31）的击穿。

7. 发明公开

EP1315216A2 Bandgap isolated light emitter 有权
标题翻译：带隙孤立的光发射器
公开(公告)号：EP1315216A2
公开(公告)日：2003-05-28
申请号：EP02080608.9
申请日：1998-11-20
申请人： Honeywell Inc.
发明人： Johnson, Ralph H.
IPC分类号： H01L29/861 , H01L33/00 , H01S5/183
CPC分类号： H01S5/18341 , H01L33/105 , H01L33/145 , H01L33/465 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18369 , H01S5/2063 , H01S5/3054 , H01S5/3086 , H01S2301/173
摘要： A light emitting device having a first mirror (58), an active layer (64), a second mirror (68) and a beryllium implantation (82) resulting in a peripheral boundary of a waveguide (86) through the first and second mirrors (58, 68) the active layer (64) and the trapping layer (62). A P-N junction is situated within the implantation and the guide. The turn of the voltage is lower for the junction within the waveguide than that within ght implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer (62) between said first mirror (58) and said active layer (64), and a conduction layer (72) situated on the second mirror (68).
摘要翻译：一种具有第一反射镜（58），有源层（64），第二反射镜（68）和铍注入（82）的发光器件，其产生通过第一和第二反射镜（86）的波导（86）的外围边界 58，68）有源层（64）和俘获层（62）。 P-N结位于植入和导引器内。对于波导内的接合点，电压的转变比在ght注入内的接合低，导致在施加到器件的电压大于下结电压且小于上结电压的情况下，导管内的电流被限制。该器件还具有在所述第一反射镜（58）和所述有源层（64）之间的电子俘获层（62）以及位于第二反射镜（68）上的导电层（72）。

8. 发明公开

EP0512771A3 Method for micromachining semiconductor material 失效
标题翻译：微电子学半导体材料的方法
公开(公告)号：EP0512771A3
公开(公告)日：1993-02-24
申请号：EP92303980.4
申请日：1992-05-01
申请人： HONEYWELL INC.
发明人： Hines, John R. , Kirkpatrick, Richard , Johnson, Ralph H.
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , Y10S438/924
摘要： A structure 100 is formed from two layers of material 110, 120 having opposite conductivity types. A first region 115 is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.
摘要翻译：结构100由具有相反导电类型的两层材料110,120形成。第一区域115形成在该结构内，并且至少部分地延伸成待蚀刻的层。然后对该结构的表面进行掩模和蚀刻。结果是随着形成的区域的导电类型和几何形状以及所使用的蚀刻剂而变化的微结构。

9. 发明公开

EP0512771A2 Method for micromachining semiconductor material 失效
标题翻译： Verfahren zum Mikro-Bearbeiten von Halbleitermaterial。
公开(公告)号：EP0512771A2
公开(公告)日：1992-11-11
申请号：EP92303980.4
申请日：1992-05-01
申请人： HONEYWELL INC.
发明人： Hines, John R. , Kirkpatrick, Richard , Johnson, Ralph H.
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , Y10S438/924
摘要： A structure 100 is formed from two layers of material 110, 120 having opposite conductivity types. A first region 115 is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.
摘要翻译：结构100由具有相反导电类型的两层材料110,120形成。第一区域115形成在该结构内，并且至少部分地延伸成待蚀刻的层。然后对该结构的表面进行掩模和蚀刻。结果是随着形成的区域的导电类型和几何形状以及所使用的蚀刻剂而变化的微结构。

10. 发明公开

EP0492969A2 Ribbed and bossed pressure transducer 失效
标题翻译： Druckwandler mit Rippen und Buckeln。
公开(公告)号：EP0492969A2
公开(公告)日：1992-07-01
申请号：EP91311770.1
申请日：1991-12-18
申请人： HONEYWELL INC.
发明人： Hines, John R. , Johnson, Ralph H.
IPC分类号： G01L9/00 , H01L41/04
CPC分类号： G01L9/0054 , G01L9/0042 , Y10T29/49103
摘要： A pressure transducer improves the linearity and sensitivity of an output signal from the pressure transducer; ribs 30 and bosses are introduced in the diaphragm region to collect the moments caused by a difference in pressure on the two sides of the diaphragm 15 and thus improve device sensitivity. In addition, the ribs and bosses prevent stretching of the piezoresistors 40 thus improving the linearity of the device. A constraint can also be included to improve the alignment of the piezoresistors thus improving the linearity of the device.
摘要翻译：压力传感器提高了来自压力传感器的输出信号的线性和灵敏度; 肋30和凸起被引入隔膜区域以收集由隔膜15的两侧的压差引起的力矩，从而提高装置的灵敏度。此外，肋和凸起防止压敏电阻器40的拉伸，从而提高装置的线性。还可以包括约束以改善压敏电阻器的对准，从而改善器件的线性度。

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