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    • 2. 发明公开
    • Illumination apparatus for exposure
    • BeleuchtungsapparatfürBelichtung。
    • EP0265917A2
    • 1988-05-04
    • EP87115792.1
    • 1987-10-27
    • HITACHI, LTD.
    • Yoshitake, YasuhiroOshida, YoshitadaShiba, MasatakaNakashima, Naoto
    • G03F7/20
    • G03F7/70558G03F7/2006G03F7/70041G03F7/70058
    • An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle (4) on a semiconductor wafer (6) through a projection lens (5). The illumination apparatus includes an excimer laser (1) for emitting a pulsed laser beam, an optical system (3) for illuminating the reticle (4) with a plurality of laser pulses emitted from the excimer laser (1) so that laser pulses having passed through the reticle (4) impinge on the semiconductor wafer (6) in different directions through the projection lens (5), and a light intensity control device (2) for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer (6), with light.
    • 公开了一种适用于投影/曝光系统的照明装置,用于通过投影透镜(5)将半导体晶片(6)上的标线片(4)的电路图案的图像投影到投影/曝光系统中。 照明装置包括用于发射脉冲激光束的准分子激光器(1),用于从准分子激光器(1)发射的多个激光脉冲照射标线片(4)的光学系统(3),使得激光脉冲已经通过 通过所述标线片(4)通过所述投影透镜(5)在不同方向上撞击所述半导体晶片(6),以及光强度控制装置(2),用于控制所述激光脉冲的光强度,使得所述激光脉冲 同样有助于提供在半导体晶片(6)上的光敏材料与光的反应。
    • 4. 发明公开
    • Exposure apparatus and method of aligning exposure mask with workpiece
    • 曝光装置和工作接触掩模的方法
    • EP0148477A3
    • 1985-09-04
    • EP84115889
    • 1984-12-20
    • HITACHI, LTD.
    • Oshida, YoshitadaShiba, MasatakaNakata, ToshihikoKoizumi, MitsuyoshiNakashima, Naoto
    • G03B41/00
    • G03F9/7049
    • An exposure apparatus comprises a light source (4), a mask plate (1) having an exposure pattern area section (11) and an alignment/reflection area section (30; 60), a projection lens (3), a movable stage (7) for holding a workpiece (2) having a workpiece alignment mark (22,22'), an alignment control (5, 80) and a driver for the movable stage. Before the exposure pattern area section (11) is illuminated by the light source (4) to be projected through the projection lens (3) onto the workpiece (2), the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section (30; 60) is on that surface of the mask plate (1) which does not face the light source (4) and includes a reflection portion for conducting light from another light source (503; 521-524; 51"; 90) to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion for providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
    • 8. 发明公开
    • Alignment method for reduction projection type aligner
    • 用于Ausrichtprojektor还原类型的调整过程。
    • EP0182251A1
    • 1986-05-28
    • EP85114364.4
    • 1985-11-12
    • HITACHI, LTD.
    • Nakata, ToshihikoShiba, MasatakaOshida, YoshitadaUto, SachioYoshizaki, Atsuhiro
    • H01L21/68G03F9/00G03B27/53G02B27/00
    • G03F9/7076
    • An alignment method for reduction projection type aligner is disclosed in which the rough detection of reticle position in the reticle alignment process at the time of mounting a reticle (1) and the fine detection of reticle position in the wafer alignment for the alignment between a wafer (3) and the reticle (1) are performed automatically by the same reticle alignment pattern (18) and the same optical alignment detection system (38). A plurality of one- or two-dimensional Fresnel zone plates (19, 20) having different shapes of diffraction patterns formed outside of a reticle circuit pattern (16) and arranged at a position outward of the entrance pupil (2') of the reduction projection lens (2) are used as a a reticle alignment pattern (18) to detect the absolute position of the reticle (1). The detection field of view of the optical alignment detection system (38) is thus effectively widened to make pattern detection possible with high magnification for an improved detection accuracy. The same reticle alignment pattern (18) and the same optical alignment detection system (38) are used for rough detection of reticle position in reticle alignment and fine detection of reti- cie position in wafer alignment. In the optical alignment detection system (38), on the other hand, the image position of the diffraction pattern (39a to 39c) from the reticle alignment pattern (18) and the image position of the wafer alignment pattern (14) are located at the same distance from the recticle surface.