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1. 发明公开

EP2927966A1 Optical device including three-coupled quantum well structure 审中-实审
标题翻译： Optische Vorrichtung mit dreifach gekoppelter Quantentopfstruktur
公开(公告)号：EP2927966A1
公开(公告)日：2015-10-07
申请号：EP14193695.5
申请日：2014-11-18
申请人： Samsung Electronics Co., Ltd , Gwangju Institute of Science and Technology
发明人： Cho, Yongchul , Lee, Yongtak , Na, Byunghoon , Park, Changyoung , Ju, Gunwu , Park, Yonghwa
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/105 , G02F1/017
CPC分类号： G02F1/01725 , B82Y20/00 , G02F1/133605 , G02F2001/0157 , G02F2001/01733 , G02F2001/0175 , G02F2001/01766 , H01L23/528 , H01L23/53223 , H01L31/00 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L33/04 , H01L33/10 , H01L33/42 , H01L33/46 , H01L33/502 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/05124 , H01L2924/00 , H01L2924/00014 , H01L2924/12042 , Y02E10/548 , Y10S977/755
摘要： An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.
摘要翻译：光学装置包括有源层，其包括至少两个外部屏障和至少一个耦合的量子阱，所述耦合量子阱插入在所述至少两个外部屏障之间。每个耦合量子阱包括至少三个量子阱层和分别设置在至少三个量子阱层之间的至少两个耦合势垒。设置在至少三个量子阱层的相对端部的两个量子阱层的厚度小于设置在相对端部处的两个量子阱层之间的另一个量子阱层的厚度。设置在相对端部的两个量子阱层的带隙可以高于设置在两个量子阱层之间的另一个量子阱层的带隙。

2. 发明授权

EP2112537B1 Optical interconnection structure and method for manufacturing the same 有权
标题翻译：光学互连结构及其制造方法
公开(公告)号：EP2112537B1
公开(公告)日：2012-09-12
申请号：EP09158831.9
申请日：2009-04-27
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin , Min, Eunkyeong
IPC分类号： G02B6/42
CPC分类号： G02B6/4214 , G02B6/4204 , G02B6/423 , G02B6/4232

3. 发明授权

EP2124263B1 Reflection type optical sensor device 有权
标题翻译：反射型光学传感器装置
公开(公告)号：EP2124263B1
公开(公告)日：2017-05-03
申请号：EP09160742.4
申请日：2009-05-20
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin
IPC分类号： H01L31/173 , H01L31/0232 , H01L27/15 , H01S5/026
CPC分类号： H01L27/15 , H01L31/02327 , H01L31/173 , H01L33/46 , H01L33/58 , H01S5/005 , H01S5/0262 , H01S5/183

4. 发明公开

EP2112536A3 Optical interconnection structure and method for manufacturing the same 有权
标题翻译：光学互连结构及其制造方法
公开(公告)号：EP2112536A3
公开(公告)日：2013-03-27
申请号：EP09158829.3
申请日：2009-04-27
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin , Min, Eunkyeong
IPC分类号： G02B6/42
CPC分类号： G02B6/43 , G02B6/4214 , Y10T29/49888
摘要： The present invention relates to an optical interconnection structure and a method for manufacturing the same. The present invention provides an optical interconnection structure comprising: a substrate on which a hole penetrating through a predetermined region is formed; and an optical guide member fixed to the inside of the hole of the substrate, wherein the optical guide member and the substrate are fixed by metal oxide. The present invention provides the optical interconnection structure that can facilitate the optical interconnection between the active optoelectronic devices that transmit/receive the optical signals and the optical waveguide, making it possible to enhance heat dissipation efficiency and improve operation speed.

5. 发明授权

EP2112536B1 Optical interconnection structure and method for manufacturing the same 有权
标题翻译：光学互连结构及其制造方法
公开(公告)号：EP2112536B1
公开(公告)日：2016-10-26
申请号：EP09158829.3
申请日：2009-04-27
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin , Min, Eunkyeong
IPC分类号： G02B6/43 , G02B6/42
CPC分类号： G02B6/43 , G02B6/4214 , Y10T29/49888

6. 发明公开

EP2112536A2 Optical interconnection structure and method for manufacturing the same 有权
标题翻译：光学互连结构及其制造方法
公开(公告)号：EP2112536A2
公开(公告)日：2009-10-28
申请号：EP09158829.3
申请日：2009-04-27
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin , Min, Eunkyeong
IPC分类号： G02B6/42
CPC分类号： G02B6/43 , G02B6/4214 , Y10T29/49888
摘要： The present invention relates to an optical interconnection structure and a method for manufacturing the same. The present invention provides an optical interconnection structure comprising: a substrate on which a hole penetrating through a predetermined region is formed; and an optical guide member fixed to the inside of the hole of the substrate, wherein the optical guide member and the substrate are fixed by metal oxide. The present invention provides the optical interconnection structure that can facilitate the optical interconnection between the active optoelectronic devices that transmit/receive the optical signals and the optical waveguide, making it possible to enhance heat dissipation efficiency and improve operation speed.
摘要翻译：光互连结构及其制造方法技术领域本发明涉及一种光互连结构及其制造方法。本发明提供一种光学互连结构，包括：衬底，在所述衬底上形成有贯穿预定区域的孔; 以及固定在所述基板的所述孔的内部的导光部件，所述导光部件和所述基板由金属氧化物固定。本发明提供了一种光互连结构，其可以促进发送/接收光信号的有源光电器件与光波导之间的光学互连，从而可以提高散热效率并提高操作速度。

7. 发明公开

EP2124263A3 Reflection type optical sensor device 有权
标题翻译：反射光传感器元件
公开(公告)号：EP2124263A3
公开(公告)日：2012-11-07
申请号：EP09160742.4
申请日：2009-05-20
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin
IPC分类号： H01L31/173 , H01L31/0232 , H01L27/15 , H01S5/026
CPC分类号： H01L27/15 , H01L31/02327 , H01L31/173 , H01L33/46 , H01L33/58 , H01S5/005 , H01S5/0262 , H01S5/183
摘要： Provided is a reflection type optical sensor device including: a semiconductor light source (210) being formed by providing a light emitting region on a predetermined region of a substrate (230); and a photo-detection element (220) being integrated on the same substrate (230) as the substrate where the semiconductor light source (210) is formed to surround an outer circumferential surface of the semiconductor light source (210), and including a light receiving region. When the light emitted from the semiconductor light source (210) is reflected by an external object, the photo-detection element (220) may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element (220) is constructed to surround the outer circumferential surface of the semiconductor light source (210), and thus more accurately detect the light.

8. 发明公开

EP2124263A2 Reflection type optical sensor device 有权
标题翻译： Optisches Reflexionssresorement
公开(公告)号：EP2124263A2
公开(公告)日：2009-11-25
申请号：EP09160742.4
申请日：2009-05-20
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin
IPC分类号： H01L31/173
CPC分类号： H01L27/15 , H01L31/02327 , H01L31/173 , H01L33/46 , H01L33/58 , H01S5/005 , H01S5/0262 , H01S5/183
摘要： Provided is a reflection type optical sensor device including: a semiconductor light source (210) being formed by providing a light emitting region on a predetermined region of a substrate (230); and a photo-detection element (220) being integrated on the same substrate (230) as the substrate where the semiconductor light source (210) is formed to surround an outer circumferential surface of the semiconductor light source (210), and including a light receiving region. When the light emitted from the semiconductor light source (210) is reflected by an external object, the photo-detection element (220) may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element (220) is constructed to surround the outer circumferential surface of the semiconductor light source (210), and thus more accurately detect the light.
摘要翻译：提供了一种反射型光学传感器装置，包括：通过在基板的预定区域上提供发光区域形成的半导体光源（210）; 和与所述半导体光源（210）形成为包围所述半导体光源（210）的外周面的基板相同的基板（230）上的光检测元件（220），并且包括光接收区域。当从半导体光源（210）发射的光被外部物体反射时，光检测元件（220）可以检测光以感测物体。通过这种方式，可以降低成本并确保小尺寸。此外，光检测元件（220）被构造成围绕半导体光源（210）的外周表面，从而更准确地检测光。

9. 发明公开

EP2112537A1 Optical interconnection structure and method for manufacturing the same 有权
标题翻译： Optische Verbindungsstruktur und Herstellungsverfahrendafür
公开(公告)号：EP2112537A1
公开(公告)日：2009-10-28
申请号：EP09158831.9
申请日：2009-04-27
申请人： Gwangju Institute of Science and Technology
发明人： Lee, Yongtak , Song, Youngmin , Min, Eunkyeong
IPC分类号： G02B6/42
CPC分类号： G02B6/4214 , G02B6/4204 , G02B6/423 , G02B6/4232
摘要： The present invention relates to an optical interconnection structure and a method for manufacturing the same. The optical interconnection structure includes a silicon substrate (10) on which at least one groove for a lens is formed to have a curvature radius on the upper surface thereof. A silica layer (30) is formed on the silicon substrate including the groove for a lens to retain a shape of the groove for a lens. As a result, the optical interconnection structure can be manufactured in great quantities by performing most of the processes using a semiconductor processing equipment and have better thermal characteristics than that of the existing PCB substrate.
摘要翻译：本发明涉及光互连结构及其制造方法。光学互连结构包括硅基板（10），在其上形成至少一个用于透镜的凹槽，以在其上表面上具有曲率半径。在硅衬底上形成二氧化硅层（30），该硅衬底包括用于透镜的凹槽以保持用于透镜的凹槽的形状。结果，通过使用半导体加工设备执行大部分工艺并且具有比现有PCB基板更好的热特性，可以大量地制造光学互连结构。

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