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1. 发明授权

EP0051500B1 Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：EP0051500B1
公开(公告)日：1986-02-19
申请号：EP81305257.8
申请日：1981-11-05
申请人： FUJITSU LIMITED
发明人： Inoue, Shin-ichi , Toyokura, Nobuo , Ishikawa, Hajime
IPC分类号： H01L29/04 , H01L23/52
CPC分类号： H01L21/2257 , H01L21/28518 , H01L21/321 , H01L21/32155 , H01L21/76889 , H01L29/456

2. 发明公开

EP0051500A3 Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：EP0051500A3
公开(公告)日：1983-02-16
申请号：EP81305257
申请日：1981-11-05
申请人： FUJITSU LIMITED
发明人： Inoue, Shin-ichi , Toyokura, Nobuo , Ishikawa, Hajime
IPC分类号： H01L29/04 , H01L23/52
CPC分类号： H01L21/2257 , H01L21/28518 , H01L21/321 , H01L21/32155 , H01L21/76889 , H01L29/456
摘要： A conductor layer (25, 26,) such as an electrode and an interconnection electrode formed in a semiconductor device is made of metal silicide doped with prescribed impurities. An insulating oxide layer (27), on the conductor layer (25, 26,) is formed by oxidizing the conductor layer. This oxidation is facilitated by the doping of the metal silicate.

3. 发明公开

EP0051500A2 Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：EP0051500A2
公开(公告)日：1982-05-12
申请号：EP81305257.8
申请日：1981-11-05
申请人： FUJITSU LIMITED
发明人： Inoue, Shin-ichi , Toyokura, Nobuo , Ishikawa, Hajime
IPC分类号： H01L29/04 , H01L23/52
CPC分类号： H01L21/2257 , H01L21/28518 , H01L21/321 , H01L21/32155 , H01L21/76889 , H01L29/456
摘要： A conductor layer (25, 26,) such as an electrode and an interconnection electrode formed in a semiconductor device is made of metal silicide doped with prescribed impurities. An insulating oxide layer (27), on the conductor layer (25, 26,) is formed by oxidizing the conductor layer. This oxidation is facilitated by the doping of the metal silicate.
摘要翻译：在半导体器件中形成的诸如电极和互连电极的导体层（25,26）由掺杂有规定杂质的金属硅化物制成。通过氧化导体层形成导体层（25,26）上的绝缘氧化物层（27）。这种氧化由金属硅酸盐的掺杂促进。

4. 发明授权

EP0015694B1 Method for forming an insulating film on a semiconductor substrate surface 失效
标题翻译：在半导体衬底表面上形成绝缘膜的方法
公开(公告)号：EP0015694B1
公开(公告)日：1986-05-07
申请号：EP80300530.5
申请日：1980-02-22
申请人： FUJITSU LIMITED
发明人： Nozaki, Takao , Ito, Takashi , Arakawa, Hideki , Shinoda, Masaichi , Ishikawa, Hajime
IPC分类号： H01L21/318 , H01L21/28
CPC分类号： H01L21/3185 , H01L21/318

5. 发明公开

EP0025311A2 Non-volatile semiconductor memory device 失效
标题翻译： Nicht-flüchtigeHalbleiterspeichervorrichtung。
公开(公告)号：EP0025311A2
公开(公告)日：1981-03-18
申请号：EP80302964.4
申请日：1980-08-27
申请人： FUJITSU LIMITED
发明人： Hijiya, Shinpei , Ito, Takashi , Nozaki, Takao , Ishikawa, Hajime
IPC分类号： G11C11/34 , H01L29/78 , H01L29/60
CPC分类号： H01L29/7886
摘要： A non-volatile semiconductor memory device comprises a substrate (1) a source region (3) and a drain region (4); a channel region (5) between the source and drain regions; first and second insulating layers (6, 8) over the channel region; and a floating-gate (7) or traps (7') between the first and second insulating layers. In the first insulating layer the gap of an energy band thereof increases from the region ofthesubs- I trate to the region of the floating-gate or the traps.
摘要翻译：非易失性半导体存储器件包括：衬底（1），源区（3）和漏区（4）; 在源极和漏极区之间的沟道区（5）在沟道区上的第一和第二绝缘层（6,8）; 和在第一和第二绝缘层之间的浮栅（7）或陷阱（7分钟）。在第一绝缘层中，能带的间隙从衬底的区域增加到浮栅或陷阱的区域。

6. 发明授权

EP0024125B1 Process for producing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：EP0024125B1
公开(公告)日：1986-02-26
申请号：EP80302488.4
申请日：1980-07-23
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Ishikawa, Hajime , Shinoda, Masaichi
IPC分类号： H01L21/318
CPC分类号： H01L27/1085 , H01L21/3185 , H01L21/32 , H01L27/10805 , H01L29/66575 , H01L29/78

7. 发明公开

EP0025311A3 Non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：EP0025311A3
公开(公告)日：1982-07-14
申请号：EP80302964
申请日：1980-08-27
申请人： FUJITSU LIMITED
发明人： Hijiya, Shinpei , Ito, Takashi , Nozaki, Takao , Ishikawa, Hajime
IPC分类号： G11C11/34 , H01L29/78 , H01L29/60
CPC分类号： H01L29/7886
摘要： A non-volatile semiconductor memory device comprises a substrate (1) a source region (3) and a drain region (4); a channel region (5) between the source and drain regions; first and second insulating layers (6, 8) over the channel region; and a floating-gate (7) or traps (7') between the first and second insulating layers. In the first insulating layer the gap of an energy band thereof increases from the region ofthesubs- I trate to the region of the floating-gate or the traps.
摘要翻译：非易失性半导体存储器件包括：衬底（1），源区（3）和漏区（4）; 在源极和漏极区之间的沟道区（5）在沟道区上的第一和第二绝缘层（6,8）; 和在第一和第二绝缘层之间的浮栅（7）或陷阱（7分钟）。在第一绝缘层中，能带的间隙从衬底的区域增加到浮栅或陷阱的区域。

8. 发明公开

EP0024125A1 Process for producing a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：EP0024125A1
公开(公告)日：1981-02-25
申请号：EP80302488.4
申请日：1980-07-23
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Ishikawa, Hajime , Shinoda, Masaichi
IPC分类号： H01L21/318
CPC分类号： H01L27/1085 , H01L21/3185 , H01L21/32 , H01L27/10805 , H01L29/66575 , H01L29/78
摘要： In the production of a semiconductor device including an MISFET or a one transistor-one capacitor-memory cell, an excellent oxidation resistance of a silicon nitride film formed by direct nitridation, as well as a great oxidation tendency of a covering layer made of, for example, polycrystalline silicon and selectively formed on the silicon nitride film, are utilized so as to form various regions of the semiconductor device in self alignment and to prevent a short circuit between such regions.
A process according to the present invention comprises the steps of: selectively covering a semiconductor substrate (1), with a relatively thick filed insulation film (2); forming on the exposed part of the semiconductor substrate a relatively thin nitride film (32), by direct nitridation, and ; selectively forming a film (35, 54) of silicon or a metal silicide on the silicon nitride film. A capacitor made of the silicon nitride (32), is formed between the silicon or silicide film (54), and the semiconductor substrate (1). The capacitor may be one for storing information. 1
摘要翻译：在包括MISFET或一个晶体管一个电容器 - 存储器单元的半导体器件的生产中，通过直接氮化形成的氮化硅膜的优异的抗氧化性以及由以下材料制成的覆盖层的大的氧化趋势：例如多晶硅并选择性地形成在氮化硅膜上，以便自对准地形成半导体器件的各个区域并防止这些区域之间的短路。根据本发明的方法包括以下步骤：用较厚的场绝缘膜（2）选择性地覆盖半导体衬底（1）; 通过直接氮化在半导体衬底的暴露部分上形成相对薄的氮化物膜（32）;以及; 在氮化硅膜上选择性地形成硅或金属硅化物膜（35,54）。在硅或硅化物膜（54）与半导体衬底（1）之间形成由氮化硅（32）制成的电容器。电容器可以是用于存储信息的电容器。 1

9. 发明公开

EP0015694A2 Method for forming an insulating film on a semiconductor substrate surface 失效
标题翻译：一种半导体本体的表面上制造绝缘膜的过程。
公开(公告)号：EP0015694A2
公开(公告)日：1980-09-17
申请号：EP80300530.5
申请日：1980-02-22
申请人： FUJITSU LIMITED
发明人： Nozaki, Takao , Ito, Takashi , Arakawa, Hideki , Shinoda, Masaichi , Ishikawa, Hajime
IPC分类号： H01L21/318 , H01L21/28
CPC分类号： H01L21/3185 , H01L21/318
摘要： In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. in the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300°C within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period of direct nitridation of silicon.

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