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1. 发明授权

EP0331555B1 Gettering treatment process 失效
标题翻译： Getterprozess
公开(公告)号：EP0331555B1
公开(公告)日：1997-05-28
申请号：EP89400470.4
申请日：1989-02-20
申请人： FUJITSU LIMITED
发明人： Sugino, Rinshi , Nara, Yasuo , Ito, Takashi
IPC分类号： H01L21/306 , H01L21/316
CPC分类号： H01L21/02046 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/02321 , H01L21/02337 , H01L21/02348 , H01L21/31662

2. 发明授权

EP0089242B1 Method and apparatus for gas phase treatment of substrates 失效
标题翻译：用于气相处理基质的方法和装置
公开(公告)号：EP0089242B1
公开(公告)日：1989-07-26
申请号：EP83301464.0
申请日：1983-03-16
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Kato, Ichiro
IPC分类号： C30B33/00 , C23C14/34
CPC分类号： H01L21/324 , C30B33/005 , H01L21/02381 , H01L21/02532 , H01L21/0262

3. 发明授权

EP0072603B1 Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride 无效
标题翻译：用于制造具有由氧化硅膜覆盖的二氧化硅绝缘层的半导体器件的方法
公开(公告)号：EP0072603B1
公开(公告)日：1986-10-01
申请号：EP82201230.8
申请日：1979-06-12
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Nozaki, Takao
IPC分类号： H01L21/28 , H01L21/314 , H01L21/318 , H01L29/62
CPC分类号： H01L21/28202 , H01L21/28167 , H01L21/3144 , H01L21/3185 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L29/51 , H01L29/511 , Y10S148/043 , Y10S148/112 , Y10S148/114

4. 发明公开

EP0168125A1 Wiring layers in semiconductor devices 有权
标题翻译：在半导体器件中的布线层。
公开(公告)号：EP0168125A1
公开(公告)日：1986-01-15
申请号：EP85301892.7
申请日：1985-03-19
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Horie, Hiroshi , Sugii, Toshihiro
IPC分类号： H01L29/40 , H01L23/52
CPC分类号： H01L21/28061 , H01L29/458 , H01L29/4941
摘要： A semiconductor device has an electrode wiring layer including a first conductive layer (4) extending over an active region of the device, and a second conductive layer (6) spaced from the first conductive layer by a barrier layer (5) used for reaction prevention. The barrier layer consists of an insulating film having a thickness thin enough for flow of a tunnel current. In this way a wiring layer can be produced satsifactorily such as to have lower resistivity than an otherwise comparable prior wiring layer.

5. 发明公开

EP0107416A2 Method of producing semiconductor device 失效
标题翻译：生产半导体器件的方法
公开(公告)号：EP0107416A2
公开(公告)日：1984-05-02
申请号：EP83305971.0
申请日：1983-09-30
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Sugii, Toshihiro , Fukano, Tetsu , Horie, Hiroshi
IPC分类号： H01L21/31 , H01L21/28
CPC分类号： H01L21/7688 , H01L21/033 , H01L21/31116 , H01L21/32137 , Y10S438/965
摘要： A bipolar or MOS semiconductor device is produced by self-alignment by the steps of (a) forming an insulating film on a semiconductor substrate, (b) forming a first conductive film, (c) forming a first masking film having a window, (d) anisotropically etching the conductive film to form an opening, (e) transversely etching the conductive film to form a protruding portion of the masking film, (f) forming a second masking film on the insulating film through the window, (g) etching an uncovered portion of the insulating film under the protruding portion, and (h) forming a second conductive film connecting the first conductive film and the exposed portion of the semiconductor substrate.
摘要翻译：（a）在半导体衬底上形成绝缘膜，（b）形成第一导电膜，（c）形成具有窗口的第一掩模膜，（ d）各向异性地蚀刻导电膜以形成开口，（e）横向蚀刻导电膜以形成掩模膜的突出部分，（f）通过窗口在绝缘膜上形成第二掩模膜，（g）蚀刻（h）形成连接第一导电膜和半导体衬底的暴露部分的第二导电膜。

6. 发明公开

EP0089242A2 Method and apparatus for gas phase treatment of substrates 失效
标题翻译：用于气相处理衬底的方法和装置。
公开(公告)号：EP0089242A2
公开(公告)日：1983-09-21
申请号：EP83301464.0
申请日：1983-03-16
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Kato, Ichiro
IPC分类号： C30B33/00 , C23C14/34
CPC分类号： H01L21/324 , C30B33/005 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Despite the short lifetime of excited plasma gas, a very large number of wafers (101) can be uniformly gas phase treated in the plasma states by using a single high frequency power supply coil (108) or capacitor not only for exciting reaction gas passing near the wafers in a reaction tube (103) but also for heating radiators (111) surrounding the wafers for heating the wafers.

7. 发明公开

EP0025311A2 Non-volatile semiconductor memory device 失效
标题翻译： Nicht-flüchtigeHalbleiterspeichervorrichtung。
公开(公告)号：EP0025311A2
公开(公告)日：1981-03-18
申请号：EP80302964.4
申请日：1980-08-27
申请人： FUJITSU LIMITED
发明人： Hijiya, Shinpei , Ito, Takashi , Nozaki, Takao , Ishikawa, Hajime
IPC分类号： G11C11/34 , H01L29/78 , H01L29/60
CPC分类号： H01L29/7886
摘要： A non-volatile semiconductor memory device comprises a substrate (1) a source region (3) and a drain region (4); a channel region (5) between the source and drain regions; first and second insulating layers (6, 8) over the channel region; and a floating-gate (7) or traps (7') between the first and second insulating layers. In the first insulating layer the gap of an energy band thereof increases from the region ofthesubs- I trate to the region of the floating-gate or the traps.
摘要翻译：非易失性半导体存储器件包括：衬底（1），源区（3）和漏区（4）; 在源极和漏极区之间的沟道区（5）在沟道区上的第一和第二绝缘层（6,8）; 和在第一和第二绝缘层之间的浮栅（7）或陷阱（7分钟）。在第一绝缘层中，能带的间隙从衬底的区域增加到浮栅或陷阱的区域。

8. 发明公开

EP0291951A3 A semiconductor field effect transistor using single crystalline silicon carbide as a gate insulating layer 失效
标题翻译：使用单晶碳化硅作为绝缘层的半导体场效应晶体管
公开(公告)号：EP0291951A3
公开(公告)日：1991-01-30
申请号：EP88107958.6
申请日：1988-05-18
申请人： FUJITSU LIMITED
发明人： Ito, Takashi
IPC分类号： H01L29/64 , H01L29/267 , H01L29/78 , H01L29/62
CPC分类号： H01L29/432 , H01L29/267
摘要： An insulating gate field effect transistor (IGFET) having a gate insulating layer comprising a single crystalline silicon carbide (SiC) film (2) epitaxially grown on a surface of a single crystalline silicon substrate (1) by a vapor phase epitaxial growth method. Using a single crystalline SiC film (2) as the gate insulating layer, the thickness and size of the gate insulating layer can be reduced, compared with those having SiO₂ amorphous film, because of its high dielectric constant and high breakdown voltage. So, compared with the MOS FET having an SiO₂ gate insulating layer of the same thickness and the same size, the invented IGFET can be made as large as twice in transconductance. Or if the same channel current is required, the size of the invented IGFET can be made as small as one half of that of the MOS FET. This enables the invented IGFET to operate at a high speed as much as twice of that of the MOS FET having SiO₂ gate insulating layer.

9. 发明公开

EP0291951A2 A semiconductor field effect transistor using single crystalline silicon carbide as a gate insulating layer 失效
标题翻译： Halbleiterfeldeffekttransistor mit einer Gitterisolierungsschicht aus monokristallinem Siliziumcarbid。
公开(公告)号：EP0291951A2
公开(公告)日：1988-11-23
申请号：EP88107958.6
申请日：1988-05-18
申请人： FUJITSU LIMITED
发明人： Ito, Takashi
IPC分类号： H01L29/64 , H01L29/267 , H01L29/78 , H01L29/62
CPC分类号： H01L29/432 , H01L29/267
摘要： An insulating gate field effect transistor (IGFET) having a gate insulating layer comprising a single crystalline silicon carbide (SiC) film (2) epitaxially grown on a surface of a single crystalline silicon substrate (1) by a vapor phase epitaxial growth method. Using a single crystalline SiC film (2) as the gate insulating layer, the thickness and size of the gate insulating layer can be reduced, compared with those having SiO₂ amorphous film, because of its high dielectric constant and high breakdown voltage. So, compared with the MOS FET having an SiO₂ gate insulating layer of the same thickness and the same size, the invented IGFET can be made as large as twice in transconductance. Or if the same channel current is required, the size of the invented IGFET can be made as small as one half of that of the MOS FET. This enables the invented IGFET to operate at a high speed as much as twice of that of the MOS FET having SiO₂ gate insulating layer.
摘要翻译：一种绝缘栅场效应晶体管（IGFET），其具有通过气相外延生长法在单晶硅衬底（1）的表面上外延生长的单晶碳化硅（SiC）膜（2）的栅极绝缘层。由于其高介电常数和高的击穿电压，使用单晶SiC膜（2）作为栅极绝缘层，与具有SiO 2非晶膜的那些相比，可以减小栅极绝缘层的厚度和尺寸。因此，与具有相同厚度和相同尺寸的SiO 2栅极绝缘层的MOS FET相比，本发明的IGFET可以制造为跨导体的两倍大。或者如果需要相同的通道电流，则本发明的IGFET的尺寸可以被制成小至MOS FET的一半的尺寸。这使得本发明的IGFET能够以具有SiO 2栅极绝缘层的MOS FET的高达两倍的速度工作。

10. 发明公开

EP0089242A3 Method and apparatus for gas phase treatment of substrates 失效
标题翻译：气相处理基质的方法与装置
公开(公告)号：EP0089242A3
公开(公告)日：1985-05-22
申请号：EP83301464
申请日：1983-03-16
申请人： FUJITSU LIMITED
发明人： Ito, Takashi , Kato, Ichiro
IPC分类号： C30B33/00 , C23C11/00
CPC分类号： H01L21/324 , C30B33/005 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Despite the short lifetime of excited plasma gas, a very large number of wafers (101) can be uniformly gas phase treated in the plasma states by using a single high frequency power supply coil (108) or capacitor not only for exciting reaction gas passing near the wafers in a reaction tube (103) but also for heating radiators (111) surrounding the wafers for heating the wafers.

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