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1. 发明公开

EP1612861A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1612861A1
公开(公告)日：2006-01-04
申请号：EP03816642.7
申请日：2003-04-10
申请人： FUJITSU LIMITED
发明人： EMA, Taiji, c/o FUJITSU LIMITED , KOJIMA, Hideyuki, c/o FUJITSU LIMITED , ANEZAKI, Toru, c/o FUJITSU LIMITED
IPC分类号： H01L27/088
CPC分类号： H01L21/823412 , H01L21/823456 , H01L21/823493 , H01L21/823807 , H01L21/823857 , H01L21/823878 , H01L21/823892
摘要： Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.
摘要翻译：显示期望特性的多种晶体管以较少的工艺制造。一种半导体器件包括：达到第一深度的隔离区，第一导电类型的第一和第二阱，形成在第一阱中并具有第一厚度的栅极绝缘膜的第一晶体管以及形成在第二阱中的第二晶体管，以及具有小于第一厚度的第二厚度的栅极绝缘膜。第一阱具有仅在等于或大于第一深度的深度处具有极值最大值的第一杂质浓度分布。第二阱具有第一杂质浓度分布的叠加的第二杂质浓度分布和在小于第一深度的第二深度处示出极值最大值的另一个杂质浓度分布，叠加还显示在第二阱处的极值最大值第二深度。

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