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1. 发明公开

EP1196814A1 USE OF A STORAGE CAPACITOR TO ENHANCE THE PERFORMANCE OF AN ACTIVE MATRIX DRIVEN ELECTRONIC DISPLAY 审中-公开
标题翻译：使用存储电容器提高的表现，受控制的有源矩阵电子显示屏
公开(公告)号：EP1196814A1
公开(公告)日：2002-04-17
申请号：EP00950570.2
申请日：2000-07-21
申请人： E Ink Corporation
发明人： AMUNDSON, Karl , DRZAIC, Paul , KAZLAS, Peter
IPC分类号： G02F1/1362
CPC分类号： G09G3/344 , G02F1/1334 , G02F1/136213 , G02F1/167 , G02F1/172 , G09G2300/0809 , G09G2300/0842 , G09G2310/0262 , G09G2320/0252
摘要： A system and method of use of a storage capacitor to improve the appearance and addressing characteristics of an electronically driven display. The capacitor is formed by the overlap of portions of electrodes used to address different pixels, or by the overlap of an addressing line and a conductor. An insulator layer situated between the capacitor electrodes can be the same insulator layer present in an FET transistor used to address the pixel. Methods of use of capacitors to achieve improved display addressing are disclosed.

2. 发明授权

EP1208612B1 METHOD FOR FORMING A PATTERNED SEMICONDUCTOR FILM 有权
标题翻译：一种用于生产结构的半导体薄膜
公开(公告)号：EP1208612B1
公开(公告)日：2011-01-12
申请号：EP00959768.3
申请日：2000-08-31
申请人： E Ink Corporation
发明人： AMUNDSON, Karl , DRZAIC, Paul, S. , WANG, Jianna , DUTHALER, Gregg , KAZLAS, Peter
IPC分类号： H01L51/40
CPC分类号： H01L51/0016 , H01L27/28 , H01L51/0004 , H01L51/0014 , H01L51/0019 , H01L51/0508
摘要： A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.

3. 发明授权

EP1198852B1 PREFERRED METHODS FOR PRODUCING ELECTRICAL CIRCUIT ELEMENTS USED TO CONTROL AN ELECTRONIC DISPLAY 有权
标题翻译：优选方法中，用于电子控制的电导体DISPLAYS制造
公开(公告)号：EP1198852B1
公开(公告)日：2009-12-02
申请号：EP00960181.6
申请日：2000-07-21
申请人： E Ink Corporation
发明人： DUTHALER, Gregg, , AMUNDSON, Karl , DRZAIC, Paul , KAZLAS, Peter , WANG, Jianna
IPC分类号： H01L51/40
CPC分类号： H01L21/00 , B33Y80/00 , B82Y30/00 , H01L27/32 , H01L51/0004 , H01L51/0516 , H01L51/0545 , H01L51/42 , H01L51/5012
摘要： Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.
摘要翻译：系统和用于产生在控制电子显示器有用薄膜晶体管结构的方法。薄膜晶体管使用全添加剂方法，包括印刷技术，软光刻和材料沉积方法制造。薄膜晶体管可以与在底部或在该结构的顶部栅极沉积。的沉积方法包括分离几乎完全从电子显示设备调用晶体管结构，以便最小化或消除有害的相互作用之间存在的可能性。

4. 发明公开

EP1208612A1 METHOD FOR FORMING A PATTERNED SEMICONDUCTOR FILM 有权
标题翻译：一种用于生产结构的半导体薄膜
公开(公告)号：EP1208612A1
公开(公告)日：2002-05-29
申请号：EP00959768.3
申请日：2000-08-31
申请人： E Ink Corporation
发明人： AMUNDSON, Karl , DRZAIC, Paul, S. , WANG, Jianna , DUTHALER, Gregg , KAZLAS, Peter
IPC分类号： H01L51/40
CPC分类号： H01L51/0016 , H01L27/28 , H01L51/0004 , H01L51/0014 , H01L51/0019 , H01L51/0508
摘要： A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.

5. 发明公开

EP1198852A1 PREFERRED METHODS FOR PRODUCING ELECTRICAL CIRCUIT ELEMENTS USED TO CONTROL AN ELECTRONIC DISPLAY 有权
标题翻译：优选方法中，用于电子控制的电导体DISPLAYS制造
公开(公告)号：EP1198852A1
公开(公告)日：2002-04-24
申请号：EP00960181.6
申请日：2000-07-21
申请人： E Ink Corporation
发明人： DUTHALER, Gregg,1243 Beacon Street , AMUNDSON, Karl , DRZAIC, Paul , KAZLAS, Peter , WANG, Jianna
IPC分类号： H01L51/40
CPC分类号： H01L21/00 , B33Y80/00 , B82Y30/00 , H01L27/32 , H01L51/0004 , H01L51/0516 , H01L51/0545 , H01L51/42 , H01L51/5012
摘要： Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.

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