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1. 发明公开

EP2396861A1 HYBRID VERTICAL-CAVITY LASER 有权
标题翻译：具有垂直谐振器的激光复合
公开(公告)号：EP2396861A1
公开(公告)日：2011-12-21
申请号：EP10701195.9
申请日：2010-01-22
申请人： Danmarks Tekniske Universitet
发明人： CHUNG, Il-Sug
IPC分类号： H01S5/20 , H01S5/183
CPC分类号： H01S5/10 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18311 , H01S5/18341 , H01S5/18366 , H01S5/1838 , H01S5/3095
摘要： The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

2. 发明公开

EP3130045A2 VCSEL STRUCTURE 审中-公开
标题翻译： VCSEL的STRUKTUR
公开(公告)号：EP3130045A2
公开(公告)日：2017-02-15
申请号：EP15715230.7
申请日：2015-04-07
申请人： Danmarks Tekniske Universitet
发明人： CHUNG, Il-Sug , TAGHIZADEH, Alireza
IPC分类号： H01S5/183 , H01S5/026 , H01S5/10
CPC分类号： H01S5/18319 , H01S5/026 , H01S5/1032 , H01S5/183 , H01S5/18302 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18363 , H01S5/1838 , H01S5/18386 , H01S5/18397
摘要： The invention relates to a VCSEL structure based on a novel grating reflector. The grating reflector (1) comprises a grating layer (20) with a contiguous core grating region having a grating structure, wherein an index of refraction of high-index sections (21) of the grating structure is at least 2.5, and wherein an index of refraction of low-index sections (22) of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer (30) abutting the grating layer (20), and an index of refraction of the cap layer within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity and amplification. The cap layer (30) may comprise an active layer (32) between cladding layers (31,33) and electrical contacts (35,36) to provide a current through the active layer. Current confinement may be realized by low-index oxide regions (60).
摘要翻译：本发明涉及一种基于新型光栅反射器的VCSEL结构。光栅反射器（1）包括具有光栅结构的相邻核心光栅区域的光栅层（20），其中光栅结构的高折射率部分（21）的折射率至少为2.5，其中指数光栅结构的低折射率部分（22）的折射率小于2.核心光栅区域在垂直于光栅层的方向上限定投影。栅格反射器还包括邻接光栅层（20）的覆盖层（30），并且覆盖层在核心光栅区域的突出部内的覆盖层的折射率至少为2.5，并且在核心光栅区域，盖层与第一固体电介质低折射率层邻接，第一低折射率层或空气的折射率小于2; 并且在芯光栅区域的投影内，光栅层也被第二低折射率层和/或空气邻接，第二低折射率层或空气的折射率小于2. VCSEL结构还包括第一反射器和用于提供空腔和放大的有源区域。盖层（30）可以包括在包层（31,33）和电触点（35,36）之间的有源层（32），以提供穿过有源层的电流。电流限制可以由低折射率氧化物区域实现（60）。

3. 发明授权

EP2729997B1 LASER DEVICE 有权
公开(公告)号：EP2729997B1
公开(公告)日：2015-12-16
申请号：EP12732519.9
申请日：2012-07-02
申请人： Danmarks Tekniske Universitet
发明人： CHUNG, Il-Sug
IPC分类号： H01S5/026 , H01S5/02 , H01S5/183 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/187 , H01S5/062
CPC分类号： H01S5/187 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/06226 , H01S5/1032 , H01S5/1228 , H01S5/1234 , H01S5/18311 , H01S5/18319 , H01S5/1838 , H01S5/18386

4. 发明公开

EP2883291A2 WAVELENGTH SWEEPABLE LASER SOURCE 有权转让
标题翻译：波长扫描资格激光光源
公开(公告)号：EP2883291A2
公开(公告)日：2015-06-17
申请号：EP13745681.0
申请日：2013-08-07
申请人： Danmarks Tekniske Universitet
发明人： YVIND, Kresten , ANSBÆK, Thor , CHUNG, Il-Sug , HANSEN, Ole
IPC分类号： H01S5/183 , H01S5/022 , H01S5/10 , H01S5/34
CPC分类号： H01S5/1096 , B82Y20/00 , H01S5/0222 , H01S5/18311 , H01S5/18313 , H01S5/18366 , H01S5/18383 , H01S5/18386 , H01S5/18397 , H01S5/3013 , H01S5/3406 , H01S5/34313 , H01S2301/17
摘要： Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines an optical cavity, and are arranged to support light oscillation in the optical cavity along an optical path in a direction normal to the substrate. The optical cavity comprises a void in the optical path. The second reflector is resiliently suspended by a suspension in a distance from the first reflector and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position. The laser source further comprises electrical connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed

5. 发明公开

EP2729997A1 LASER DEVICE 有权
标题翻译：激光装置
公开(公告)号：EP2729997A1
公开(公告)日：2014-05-14
申请号：EP12732519.9
申请日：2012-07-02
申请人： Danmarks Tekniske Universitet
发明人： CHUNG, Il-Sug
IPC分类号： H01S5/026 , H01S5/02 , H01S5/183
CPC分类号： H01S5/187 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/06226 , H01S5/1032 , H01S5/1228 , H01S5/1234 , H01S5/18311 , H01S5/18319 , H01S5/1838 , H01S5/18386
摘要： The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.
摘要翻译：本发明提供了一种用于硅平台上的光电路的光源。通过在半导体结构或晶片结构中的硅层中形成包括活性材料的光栅区域，通过布置在第一反射镜结构和第二反射镜结构之间的增益区域形成垂直激光腔，两者均用作反射镜。用于接收来自反射镜区域的光的波导形成在反射镜的区域内或与反射镜的区域连接，并且用作VCL的输出耦合器。从而，垂直激射模式被耦合到在硅层中形成的平面内波导的横向平面内模式，并且光可以被提供给例如光纤。硅上的SOI或CMOS衬底上的光子电路。

6. 发明授权

EP2396861B1 HYBRID VERTICAL-CAVITY LASER 有权
标题翻译：具有垂直谐振器的激光复合
公开(公告)号：EP2396861B1
公开(公告)日：2013-08-28
申请号：EP10701195.9
申请日：2010-01-22
申请人： Danmarks Tekniske Universitet
发明人： CHUNG, Il-Sug
IPC分类号： H01S5/10 , H01S5/183
CPC分类号： H01S5/10 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18311 , H01S5/18341 , H01S5/18366 , H01S5/1838 , H01S5/3095

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