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1. 发明授权

EP1973163B2 High temperature performance capable gallium nitride transistor 有权
标题翻译：具有高温性能的氮化镓晶体管
公开(公告)号：EP1973163B2
公开(公告)日：2015-11-18
申请号：EP08250197.4
申请日：2008-01-16
申请人： Cree, Inc.
发明人： Heikman, Sten , Wu, Yifeng
IPC分类号： H01L29/778 , H01L21/335 , H01L29/40 , H01L29/423
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/475 , H01L29/66462

2. 发明公开

EP2571057A2 Normally-off semiconductor devices and methods of fabricating the same 有权
标题翻译：常规的半导体器件及其制造方法
公开(公告)号：EP2571057A2
公开(公告)日：2013-03-20
申请号：EP12192038.3
申请日：2009-04-06
申请人： Cree, Inc.
发明人： Heikmann, Sten , Wu, Yifeng
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
摘要翻译：提供常规的半导体器件。提供III族氮化物缓冲层。在III族氮化物缓冲层上提供III族氮化物阻挡层。在III族氮化物阻挡层上提供不导电间隔层。蚀刻III族氮化物阻挡层和间隔层以形成沟槽。沟槽延伸穿过阻挡层并暴露一部分缓冲层。在间隔层和沟槽中形成电介质层，并在电介质层上形成栅电极。本文还提供了形成半导体器件的相关方法。

3. 发明公开

EP2515339A3 Wide bandgap field effect transistors with source connected field plates 有权
标题翻译：具有源极连接场板的宽带隙场效应晶体管
公开(公告)号：EP2515339A3
公开(公告)日：2012-12-12
申请号：EP12171403.4
申请日：2005-04-21
申请人： Cree, Inc.
发明人： Wu, Yifeng , Parikh, Primit , Mishra, Umesh , Moore, Marcia
IPC分类号： H01L29/812 , H01L29/417 , H01L29/40
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/812
摘要： A transistor, comprises an active region; a source electrode (18) in electrical contact with the active region; a drain electrode (20) in electrical contact with the active region; and a gate (22) in electrical contact with the active region between the source and drain electrodes. A spacer layer (26) is provided over at least a portion of the region between the gate and the drain electrode and between the gate and the source electrode. A field plate (30) on the spacer layer is electrically isolated from the active region and gate by the spacer layer formed at least partially over the gate. The field plate is electrically connected to the source electrode by at least one conductive path (32), each of which at least one conductive path is formed on the spacer layer and covers less than all the topmost surface of the spacer layer between the gate and source electrode.
摘要翻译：晶体管，包括有源区; 源电极（18），其与有源区电接触; 与有源区电接触的漏电极（20）和与源电极和漏电极之间的有源区电接触的栅极（22）。在栅极和漏极之间以及栅极和源极之间的区域的至少一部分上设置有间隔层（26）。隔离层上的场板（30）通过至少部分地形成在栅极上方的隔离层与有源区和栅极电隔离。场板通过至少一个导电路径（32）电连接到源电极，每个导电路径在间隔层上形成至少一个导电路径，并覆盖栅极和栅极之间的间隔层的全部最顶表面源电极。

4. 发明授权

EP1973163B1 High temperature performance capable gallium nitride transistor 有权
标题翻译：在高温性能Galliumnitridtransistor
公开(公告)号：EP1973163B1
公开(公告)日：2012-04-11
申请号：EP08250197.4
申请日：2008-01-16
申请人： CREE, INC.
发明人： Heikman, Sten , Wu, Yifeng
IPC分类号： H01L29/778 , H01L21/335 , H01L29/40 , H01L29/423
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/475 , H01L29/66462

5. 发明公开

EP2312634A2 Transistors with fluorine treatment 有权
标题翻译：具有氟处理的晶体管
公开(公告)号：EP2312634A2
公开(公告)日：2011-04-20
申请号：EP11153385.7
申请日：2006-07-07
申请人： Cree, Inc.
发明人： Wu, Yifeng , Moore, Marcia , Parikh, Primit , Wisleder, Tim
IPC分类号： H01L29/778 , H01L21/338 , H01L29/207 , H01L29/40 , H01L29/20
摘要： A high electron mobility transistor (HEMT), comprises a buffer layer; a barrier layer on said buffer layer; a two dimensional electron gas (2DEG) at the interface between said buffer layer and said barrier layer; and a negative ion region in said barrier layer.
摘要翻译：高电子迁移率晶体管（HEMT）包括缓冲层; 在所述缓冲层上的阻挡层; 在所述缓冲层和所述阻挡层之间的界面处的二维电子气（2DEG）和在所述阻挡层中的负离子区域。

6. 发明公开

EP2282346A2 Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer 审中-公开
标题翻译： Auf Gruppe III-Nitrid Basierter HEMT mit Sperr / Abstandsschicht
公开(公告)号：EP2282346A2
公开(公告)日：2011-02-09
申请号：EP10189898.9
申请日：2002-04-11
申请人： Cree, Inc. , The Regents of the University of California
发明人： Smorchkova, Ioulia, P. , Walukiewicz, Wladyslaw , Chavarkar, Prashant , Wu, Yifeng , Keller, Stacia , Mishra, Umesh
IPC分类号： H01L29/778
摘要： A group III nitride based high electron mobility transistor (HEMT), comprises; a semiconductor buffer layer; a high polarization semiconductor layer on said buffer layer; a semiconductor barrier layer on said high polarization layer so that said high polarization layer is sandwiched between said buffer and barrier layers, each of said layers having a non-zero total polarization pointing in the same direction, the magnitude of said polarization in said high polarization layer higher than the polarization of said buffer and barrier layers; and a two dimensional electron gas at the interface between said buffer layer and said high polarization layer.
摘要翻译：一种III族氮化物基高电子迁移率晶体管（HEMT），包括：半导体缓冲层; 所述缓冲层上的高偏振半导体层; 在所述高偏振层上的半导体阻挡层，使得所述高偏振层夹在所述缓冲层和阻挡层之间，每个所述层具有指向相同方向的非零总偏振，所述高偏振中的所述偏振的幅度层高于所述缓冲层和阻挡层的极化; 以及在所述缓冲层和所述高偏振层之间的界面处的二维电子气。

7. 发明公开

EP2270871A1 Wide bandgap HEMTs with source connected field plates 有权
标题翻译： Hemts mit grossem Bandabstand mit source-verbundenen Feldplatten
公开(公告)号：EP2270871A1
公开(公告)日：2011-01-05
申请号：EP10183607.0
申请日：2005-03-24
申请人： Cree, Inc.
发明人： Wu, Yifeng , Parikh, Primit , Mishra, Umesh , Moore, Marcia
IPC分类号： H01L29/778 , H01L29/06
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A transistor comprises a plurality of active semiconductor layers (16,18) and source and drain electrodes (20, 22) on the semiconductor layers. A gate (24) is formed between the source and drain electrodes and on the semiconductor layers. A spacer layer (26) covers at least part of the surface of the semiconductor layers between the gate and the drain, or covers at least part of the surface of the semiconductor layers between the gate and the source. A field plate (30) is formed on the spacer layer; and a conductive path (34,46) runs outside the area covered by the semiconductor layers, and between the field plate and the source electrode to electrically connect the field plate to the source electrode.
摘要翻译：晶体管包括在半导体层上的多个有源半导体层（16,18）和源极和漏极（20,22）。在源极和漏极之间以及半导体层上形成栅极（24）。间隔层（26）覆盖栅极和漏极之间的半导体层的至少一部分表面，或者覆盖栅极和源极之间的半导体层的表面的至少一部分。在间隔层上形成场板（30）并且导电路径（34,46）延伸到由半导体层覆盖的区域的外部，并且在场板和源极之间，以将场板电连接到源电极。

8. 发明公开

EP2267784A2 Insulating gate AlGaN/GaN HEMT 审中-公开
标题翻译： AlGaN-GaN HEMT mit隔离栅
公开(公告)号：EP2267784A2
公开(公告)日：2010-12-29
申请号：EP10187943.5
申请日：2002-07-23
申请人： Cree, Inc.
发明人： Parikh, Primit , Mishra, Umesh , Wu, Yifeng
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/432 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer 20 with a barrier semiconductor layer 18 on it. The barrier layer 18 has a wider bandgap than the high resistivity layer 20 and a 2DEG 22 forms between the layers. Source and drain contacts 13,14 contact the barrier layer 18, with part of the surface of the barrier layer 18 uncovered by the contacts 13,14. An insulating layer 24 is included on the uncovered surface of the barrier layer 18 and a gate contact 16 is included on the insulating layer 24. The insulating layer 24 forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive; The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition MOCVD. In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.
摘要翻译：公开了具有薄AlGaN层的AlGaN / GaN HEMT，以减少陷阱并且还具有附加层以减少栅极泄漏并增加最大驱动电流。根据本发明的一个HEMT包括其上具有阻挡半导体层18的高电阻率半导体层20。阻挡层18具有比高电阻率层20更宽的带隙，并且在层之间形成2DEG 22。源极和漏极触点13,14与阻挡层18接触，阻挡层18的一部分表面被触点13,14覆盖。绝缘层24包括在阻挡层18的未覆盖表面上，并且在绝缘层24上包括栅极接触16.绝缘层24对栅极泄漏电流形成屏障并且还有助于增加HEMT的最大电流驱动; 本发明还包括用于制造根据本发明的HEMT的方法。在一种方法中，使用金属有机化学气相沉积MOCVD制造HEMT及其绝缘层。在另一种方法中，在溅射室中将绝缘层溅射到HEMT的顶表面上。

9. 发明授权

EP2282347B1 GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH BARRIER/SPACER LAYER 有权
公开(公告)号：EP2282347B1
公开(公告)日：2020-06-03
申请号：EP10189899.7
申请日：2002-04-11
申请人： Cree, Inc. , The Regents of the University of California
发明人： Smorchkova, Ioulia, P. , Walukiewicz, Wladyslaw , Chavarkar, Prashant , Wu, Yifeng , Keller, Stacia , Mishra, Umesh
IPC分类号： H01L29/778

10. 发明授权

EP2592655B1 Fabrication of single or multiple gate field plates 有权转让
公开(公告)号：EP2592655B1
公开(公告)日：2019-11-06
申请号：EP12192425.2
申请日：2004-09-09
申请人： The Regents of the University of California , Cree, Inc.
发明人： Chini, Alessandro , Mishra, Umesh K. , Parikh, Primit , Wu, Yifeng
IPC分类号： H01L29/778 , H01L29/40 , H01L21/338 , H01L29/423 , H01L29/66 , H01L29/20 , H01L29/417

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