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1. 发明公开

EP2275837A3 Simplified silicon drift detector and wraparound neutron detector 审中-公开
标题翻译：简化的硅漂移检测器和旋转中子探测器
公开(公告)号：EP2275837A3
公开(公告)日：2014-02-26
申请号：EP10169933.8
申请日：2010-07-16
申请人： Canberra Industries, Inc.
发明人： Morichi, Massimo , Evrard, Olivier , Keters, Marijke , Bronson, Frazier , Morelle, Mathieu , Burger, Paul
IPC分类号： G01T1/29
CPC分类号： G01T1/2928
摘要： A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.

2. 发明公开

EP2275837A2 Simplified silicon drift detector and wraparound neutron detector 审中-公开
标题翻译： Vereinfachter Siliziumdriftdetektor und Rundumneutronendetektor
公开(公告)号：EP2275837A2
公开(公告)日：2011-01-19
申请号：EP10169933.8
申请日：2010-07-16
申请人： Canberra Industries, Inc.
发明人： Morichi, Massimo , Evrard, Olivier , Keters, Marijke , Bronson, Frazier , Morelle, Mathieu , Burger, Paul
IPC分类号： G01T1/29
CPC分类号： G01T1/2928
摘要： A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.
摘要翻译：一种大面积SDD检测器，其具有由转向电极包围且具有长方形，圆形，六边形或矩形形状的线性阳极。检测器具有在照射侧具有结的止动环和在阳极侧和/或照射侧上的欧姆接触。照射和阳极阻挡环偏压构型影响流向阳极的漏电流，从而影响检测器的有效面积的总体效率。还描述了用于创建所公开的SDD检测器的吸气过程。 SDD检测器可以利用具有多个阳极段和踢脚电极的分段配置来减少检测器的表面电场。在另一个实施例中，多个带状阳极连接在一起以形成用于中子检测的叉指SDD检测器。进一步描述的是用于Ge检测器以使电容最小化的环绕结构。

3. 发明公开

EP2242115A3 Light-tight silicon radiation detector 审中-公开
标题翻译：遮光硅辐射检测器
公开(公告)号：EP2242115A3
公开(公告)日：2011-09-28
申请号：EP10160212.6
申请日：2010-04-16
申请人： Canberra Industries, Inc.
发明人： Evrard, Olivier , Keters, Marijke
IPC分类号： H01L31/118 , H01L31/0224 , H01L31/028 , H01L31/0203 , H01L31/0216
CPC分类号： H01L31/118 , H01L31/0203 , H01L31/022408 , H01L31/028 , Y02E10/547
摘要： A light-tight silicon radiation detector. The detector utilizes a silicon substrate (402) having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act as the rectifying electrode (404) and as an entrance window for the sensitive volume. A first layer of titanium nitride (406) is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.

4. 发明公开

EP2246711A2 Intelligent Sensor Platform 审中-公开
标题翻译：智能传感器平台
公开(公告)号：EP2246711A2
公开(公告)日：2010-11-03
申请号：EP09169667.4
申请日：2009-09-07
申请人： Canberra Industries, Inc.
发明人： Morichi, Massimo , Keters, Marijke , Bronson, Frazier , Zakrzewski, Robert A , Evrard, Olivier , Russ, William
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , G01T1/362
摘要： A radiation detection apparatus that utilizes a radiation sensor device that includes a scintillator device that is optically coupled to a plurality of silicon drift detector devices. Each silicon drift detector device segment includes an output anode that supplies the segment output to dedicated sensor processing circuitry. With each anode having dedicated processing circuitry, each output can be processed simultaneously. Also provided is a spectroscopic analysis device that is coupled with the sensor processing circuitry for computing spectral data associated with the radiation detection event. The spectroscopic analysis device accurately characterizes the detected radionuclide and prepares the results for display before the user. Networking capabilities also allow multiples of such apparatuses to communicate in an intelligent grid, providing even greater radionuclide characterization capabilities.
摘要翻译：一种辐射检测装置，其利用包括光学耦合到多个硅漂移检测器装置的闪烁体装置的辐射传感器装置。每个硅漂移检测器器件段包括将段输出提供给专用传感器处理电路的输出阳极。在每个阳极具有专用处理电路的情况下，可以同时处理每个输出。还提供了一种与用于计算与辐射检测事件相关联的光谱数据的传感器处理电路耦合的光谱分析装置。光谱分析装置准确地表征检测到的放射性核素，并准备在用户之前进行显示的结果。网络功能还允许这种设备的倍数在智能电网中通信，提供更大的放射性核素表征能力。

5. 发明公开

EP2246711A3 Intelligent Sensor Platform 审中-公开
标题翻译：智能传感器平台
公开(公告)号：EP2246711A3
公开(公告)日：2013-11-27
申请号：EP09169667.4
申请日：2009-09-07
申请人： Canberra Industries, Inc.
发明人： Morichi, Massimo , Keters, Marijke , Bronson, Frazier , Zakrzewski, Robert A , Evrard, Olivier , Russ, William
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , G01T1/362
摘要： A radiation detection apparatus that utilizes a radiation sensor device that includes a scintillator device that is optically coupled to a plurality of silicon drift detector devices. Each silicon drift detector device segment includes an output anode that supplies the segment output to dedicated sensor processing circuitry. With each anode having dedicated processing circuitry, each output can be processed simultaneously. Also provided is a spectroscopic analysis device that is coupled with the sensor processing circuitry for computing spectral data associated with the radiation detection event. The spectroscopic analysis device accurately characterizes the detected radionuclide and prepares the results for display before the user. Networking capabilities also allow multiples of such apparatuses to communicate in an intelligent grid, providing even greater radionuclide characterization capabilities.

6. 发明公开

EP2242115A2 Light-tight silicon radiation detector 审中-公开
标题翻译： Lichtdichter Silizium-Strahlungsdetektor
公开(公告)号：EP2242115A2
公开(公告)日：2010-10-20
申请号：EP10160212.6
申请日：2010-04-16
申请人： Canberra Industries, Inc.
发明人： Evrard, Olivier , Keters, Marijke
IPC分类号： H01L31/118 , H01L31/0216
CPC分类号： H01L31/118 , H01L31/0203 , H01L31/022408 , H01L31/028 , Y02E10/547
摘要： A light-tight silicon radiation detector. The detector utilizes a silicon substrate (402) having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act as the rectifying electrode (404) and as an entrance window for the sensitive volume. A first layer of titanium nitride (406) is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.
摘要翻译：一种不透光的硅辐射探测器。检测器利用具有敏感体积的硅衬底（402）用于电离辐射的检测以及电离辐射可以通过其进入的整流接触或电极。扩散或硼注入的p +层可以用作整流电极（404）和用作敏感体积的入口窗口。第一层氮化钛（406）沉积在入口窗口上，以防止光进入敏感体积并增加检测器的耐磨损和耐腐蚀性。或者，氮化钛层可以直接沉积在硅衬底上，所述层用作表面阻挡层或肖特基势垒整流接触层。可以在背面接触层上沉积一层氮化钛，其中该氮化钛层用作欧姆接触。第二层可以进一步用作用于表面安装连接的导电接触。

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