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1. 发明授权

EP2438465B1 X-RAY DETECTION DEVICE 有权
标题翻译： X射线检测装置
公开(公告)号：EP2438465B1
公开(公告)日：2017-07-26
申请号：EP09845613.0
申请日：2009-06-05
申请人： RTI Electronics AB
发明人： HERRNSDORF, Lars , CEDERQUIST, Björn , BENGTSSON, Tomas
IPC分类号： G01T1/02 , H01L31/0224 , H01L31/115 , H01L31/118
CPC分类号： H01L31/1185 , G01T1/026 , H01L31/115

2. 发明公开

EP2346095A2 Method of manufacturing a radiation detector 审中-公开
标题翻译：制造辐射探测器的方法
公开(公告)号：EP2346095A2
公开(公告)日：2011-07-20
申请号：EP11150672.1
申请日：2011-01-12
申请人： FEI COMPANY
发明人： Nanver, Lis , Scholtes, Thomas , Sakic, Agata , Van Veen, Gerard , Kooijman, Cees
IPC分类号： H01L31/118 , H01L31/0224
CPC分类号： H01L31/1185 , H01J37/244 , H01L31/022408 , H01L31/105
摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope.
The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode.
The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.
摘要翻译：本发明公开了一种制造辐射探测器的方法，用于探测例如 200 eV电子。这使得检测器适合于例如在扫描电子显微镜中使用。探测器是一个PIN光电二极管，带有一层薄的纯硼，连接到p +扩散层。硼层连接到具有铝栅格的电极以在硼层的每个给定点与电极之间形成低电阻路径。本发明解决了在硼层上形成铝栅格而不损坏硼层。为此，通过用铝层完全覆盖硼层然后通过蚀刻去除部分铝层来形成铝的栅格，该蚀刻包括干法蚀刻的第一步骤（304），干法蚀刻的步骤限定栅格，但在硼层的一部分上留下薄铝层以暴露，接着进行湿法蚀刻的第二步骤（308），湿法蚀刻的步骤将硼从硼层的一部分完全去除至步骤被暴露。

3. 发明公开

EP2242115A2 Light-tight silicon radiation detector 审中-公开
标题翻译： Lichtdichter Silizium-Strahlungsdetektor
公开(公告)号：EP2242115A2
公开(公告)日：2010-10-20
申请号：EP10160212.6
申请日：2010-04-16
申请人： Canberra Industries, Inc.
发明人： Evrard, Olivier , Keters, Marijke
IPC分类号： H01L31/118 , H01L31/0216
CPC分类号： H01L31/118 , H01L31/0203 , H01L31/022408 , H01L31/028 , Y02E10/547
摘要： A light-tight silicon radiation detector. The detector utilizes a silicon substrate (402) having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act as the rectifying electrode (404) and as an entrance window for the sensitive volume. A first layer of titanium nitride (406) is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.
摘要翻译：一种不透光的硅辐射探测器。检测器利用具有敏感体积的硅衬底（402）用于电离辐射的检测以及电离辐射可以通过其进入的整流接触或电极。扩散或硼注入的p +层可以用作整流电极（404）和用作敏感体积的入口窗口。第一层氮化钛（406）沉积在入口窗口上，以防止光进入敏感体积并增加检测器的耐磨损和耐腐蚀性。或者，氮化钛层可以直接沉积在硅衬底上，所述层用作表面阻挡层或肖特基势垒整流接触层。可以在背面接触层上沉积一层氮化钛，其中该氮化钛层用作欧姆接触。第二层可以进一步用作用于表面安装连接的导电接触。

4. 发明授权

EP1913645B1 RÖNTGENDETEKTORMODUL MIT KOLLIMATOR 有权
标题翻译：与准直器射线检测器模块
公开(公告)号：EP1913645B1
公开(公告)日：2009-01-21
申请号：EP06776713.7
申请日：2006-08-09
申请人： Deutsches Elektronen-Synchrotron DESY
发明人： HANSEN, Karsten , VENZMER, Alexander
IPC分类号： H01L31/117 , H01L31/118 , H01L31/08 , H01L27/146 , G01T1/24 , G01T1/29
CPC分类号： H01L27/14618 , H01L27/14623 , H01L27/14659 , H01L2924/0002 , H01L2924/00
摘要： The invention relates an x-ray detector module comprising a plurality of silicium-drift detector cells which are arranged next to each other on a sensor chip. Said sensor chip is arranged in a recess of a frame-shaped base support, such that the sensitive chip surface lies in the opening of said frame-shaped base support. The aim of the invention is to improve the signal/base ratio. As a result, a mask (10) is fixed to the side of the base support (2) which is opposite to the recess, said mask covering the outer edge areas of external silicium-drift detector cells of the sensor chip (8) and ridges above the sensor chip (8) protrude into the opening of the base support (2). The ridges are arranged in such a manner that they cover the defining strips which are adjacent to the silicum drift detector cells, in order to protect the external edge areas and the defining strips which are covered by the mask (10) counter to the incident x-ray photons.

5. 发明授权

EP0896738B1 INTEGRATED dE-E DETECTOR TELESCOPE 失效
标题翻译：集成了去-E探测器望远镜
公开(公告)号：EP0896738B1
公开(公告)日：2005-06-15
申请号：EP97916687.3
申请日：1997-03-20
申请人： Pettersson, Sture , Thungström, Göran , Whitlow, Harry
发明人： Pettersson, Sture , Thungström, Göran , Whitlow, Harry
IPC分类号： H01L31/118 , H01L25/04
CPC分类号： H01L25/043 , H01L31/118 , H01L2924/0002 , H01L2924/00
摘要： A device forming a high energy resolution integrated semiconductor DELTA E-E detector telescope is disclosed, in which is formed a very thin DELTA E detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This DELTA E-E detector provides a well supported very thin DELTA E detector for high resolution. The very thin DELTA E detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.

6. 发明公开

EP3907767A1 RADIATION DETECTOR 有权
公开(公告)号：EP3907767A1
公开(公告)日：2021-11-10
申请号：EP21180810.0
申请日：2017-06-19
申请人： HAMAMATSU PHOTONICS K.K.
发明人： KINPARA, Masanori , ONODERA, Toshiyuki , HITOMI, Keitaro
IPC分类号： H01L31/08 , H01L31/118 , H01L31/0224 , G01T1/24
摘要： The present embodiment relates to a radiation detector having a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. At least one of the first electrode and the second electrode includes an alloy layer 12. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium.

7. 发明授权

EP3312637B1 RADIATION DETECTOR 有权
公开(公告)号：EP3312637B1
公开(公告)日：2020-02-26
申请号：EP17821455.7
申请日：2017-06-19
申请人： Hamamatsu Photonics K.K.
发明人： KINPARA, Masanori , ONODERA, Toshiyuki , HITOMI, Keitaro
IPC分类号： H01L31/08 , H01L31/118 , H01L31/0224 , G01T1/24

8. 发明授权

EP2244294B1 METHOD FOR MANUFACTURING RADIATION DETECTOR 有权
公开(公告)号：EP2244294B1
公开(公告)日：2018-06-27
申请号：EP08711114.2
申请日：2008-02-12
申请人： Shimadzu Corporation , Institute of National Colleges of Technology, Japan
发明人： TOKUDA, Satoshi , KISHIHARA, Hiroyuki , KAINO, Masatomo , OKAMOTO, Tamotsu
IPC分类号： H01L27/146 , G01T1/24 , H01L31/09 , H01L31/115 , H01L31/118
CPC分类号： H01L27/14659 , H01L27/14658 , H01L27/14696 , H01L31/115 , H01L31/1185
摘要： A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.

9. 发明公开

EP1391940A4 SEMICONDUCTOR RADIATION DETECTING ELEMENT 有权
标题翻译：半导体辐射检测元件
公开(公告)号：EP1391940A4
公开(公告)日：2006-08-09
申请号：EP02718533
申请日：2002-04-11
申请人： ACRORAD CO LTD
发明人： MORIYAMA MIKI , MURAKAMI MASAKI , KYAN ATSUSHI , OHNO RYOICHI
IPC分类号： G01T1/24 , H01L27/14 , H01L31/0224 , H01L31/0296 , H01L31/032 , H01L31/09 , H01L31/108 , H01L31/118
CPC分类号： H01L31/022408 , H01L31/0296 , H01L31/032 , H01L31/118
摘要： A Schottky barrier type radiation detecting element having a compound InxCdyTez comprising indium and cadmium, as means for applying a voltage to a compound semiconductor crystal principally comprising cadmium and tellurium, on one side of the compound semiconductor crystal. Percentage z of tellurium content in the compound InxCdyTez is preferably in the range of 42.9%-50% expressed in terms of the ratio of the number of atoms and percentage y of cadmium content in the compound InxCdyTez is preferably in the range of 0%-10% expressed in terms of the ratio of the number of atoms.

10. 发明授权

EP0902982B1 STREIFENDETEKTOR 失效
标题翻译：条探测器
公开(公告)号：EP0902982B1
公开(公告)日：2002-10-02
申请号：EP97925853.0
申请日：1997-05-20
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. , KEMMER, Josef, Dr.
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
IPC分类号： H01L31/115 , H01L31/118
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.

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