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    • 3. 发明公开
    • Optical semiconductor apparatus, driving method therefor, light source apparatus and optical communication system using the same
    • 的光半导体装置的驱动方法和光通信系统
    • EP0735635A3
    • 1997-11-19
    • EP96105090.3
    • 1996-03-29
    • CANON KABUSHIKI KAISHA
    • Mizutani, NatsuhikoSakata, HajimeFurukawa, Yukio
    • H01S3/103H01S3/085H01S3/19H04B10/14
    • B82Y20/00H01S5/06203H01S5/06236H01S5/0625H01S5/1057H01S5/106H01S5/1064H01S5/12H01S5/1215H01S5/1225H01S5/124H01S5/204H01S5/227H01S5/2275H01S5/3201H01S5/3404H01S5/3413H01S5/34306H01S5/3434H01S5/5009H01S5/5018H01S2301/14
    • An optical semiconductor apparatus includes at least two semiconductor laser portions (11, 12; 21, 22; 31, 32; 41, 42; 51, 52; 61, 62; 71, 72; 81, 82; 2011, 2013) each having a light waveguide with an active layer (35, 45, 105, 503, 513, 605, 703, 714, 803, 1015, 1215, 2105, 2303, 2703, 2714, 2724) and a distributed reflector (33, 43, 102, 505, 515, 603, 705, 716, 806, 1039, 1139, 2102, 2305, 2705), and a stimulating unit (113, 114, 115; 1035, 1037; 2109, 2110; 2308, 2309; 2708, 2709) for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a mudulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.
    • 的光半导体装置包括至少两个半导体激光器的部分(11,12; 21,22; 31,32; 41,42; 51,52; 61,62; 71,72; 81,82; 2011,2013)每一个都具有 一个光波导用反射有源层上(35,45,105,503,513,605,703,714,803,1015,1215,2105,2303,2703,2714,2724)和分布式(33,43,102 ,505,515,603,705,716,806,1039,1139,2102,2305,2705),和刺激单元(113,114,115; 1035,1037; 2109,2110; 2308,2309; 2708,2709 )为unabhängig刺激光波导的活性层。 的半导体激光器的部分在光的传播方向串联布置。 光波导构造搜索做传播常数之间的差在波导中的一个是从在其它波导的两个不同偏振模式的传播常数之间的差不同的两个不同的偏振模式。 当注入的调制电流信号的进入或mudulation电压到光半导体装置的振荡状态的应用中的一个可在其中布拉格波长的状态之间,用于在两个不同的偏振模式之一切换彼此的光之间重合 波导和用于所述两个不同偏振模式,其中布拉格波长的状态下彼此的光波导之间一致。
    • 6. 发明公开
    • Optical semiconductor device and method for producing the same
    • Optische Halbleitervorrichtung und Herstellungsverfahren。
    • EP0663710A2
    • 1995-07-19
    • EP95100496.9
    • 1995-01-16
    • CANON KABUSHIKI KAISHA
    • Mizutani, Natsuhiko
    • G02F1/15H01S3/19H01S3/103
    • H01L33/24H01L33/18H01S5/0424H01S5/3081Y10S438/915
    • 5n7 An optical semiconductor device includes a plurality of electrodes formed on a common side of a substrate. The device is fabricated without using a heat treatment process. On the substrate, a first type conductivity layer, a first main layer such as an active layer, whcih has any one of an undoped type, a first type conductivity and a second type conductivity, and a second type conductivity layer are formed in this order. The layers down to at least the second type conductivity layer are removed to form a ridge and at least one contact groove, which reaches the first type conductivity layer, is formed, such that surfaces having different surface indices from a surface index of the substrate are exposed at the ridge and the contact groove. A regrowth is performed on the exposed surfaces using an amphi-conductivity impurity as a dopant, such that a first portion having a first type conductivity is grown on the contact groove and a second portion having a second type conductivity is grown on the ridge. At least one transverse pn reverse junction portion is also formed during the regrowth performing step. The first type conductivity layer and the first portion act as a current injection path or first means for applying an electric field to the first main layer, and the second type conductivity layer and the second portion act as another current injection path or second means for applying an electric field to the first main layer which cooperates with the first means. The transverse pn reverse junction portion electrically separates the current injection path or the first means from the another current injection path or the second means.
    • 光学半导体器件包括形成在基板的共同侧上的多个电极。 该装置是在不使用热处理工艺的情况下制造的。 在基板上,以该顺序形成第一导电层,第一主层,例如有源层,具有未掺杂型,第一导电型和第二导电型中的任一种,第二导电层, 。 去除至少第二类型导电层的层以形成脊,形成到达第一类型导电层的至少一个接触槽,使得具有与衬底的表面折射率不同的表面指数的表面是 暴露在脊和接触槽处。 在暴露的表面上使用amphi-导电杂质作为掺杂剂进行再生长,使得在接触槽上生长具有第一类型电导率的第一部分,并且在脊上生长具有第二类型导电性的第二部分。 在再生长执行步骤期间还形成至少一个横向pn反向连接部分。 第一类型导电层和第一部分充当电流注入路径或用于向第一主层施加电场的第一装置,并且第二类型导电层和第二部分作为另一电流注入路径或第二装置施加 与第一装置配合的第一主层的电场。 横向pn反向连接部分将电流注入路径或第一装置与另一个电流注入路径或第二装置电气分离。