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    • 6. 发明公开
    • NONAQUEOUS ELECTROLYTE SECONDARY CELL
    • NICHTWÄSSRIGEELEKTROLYTISCHESEKUNDÄRZELLE
    • EP1205997A4
    • 2007-03-28
    • EP00949929
    • 2000-07-28
    • BRIDGESTONE CORP
    • OTSUKI MASASHIENDO SHIGEKIOGINO TAKAO
    • H01M4/131H01M4/58H01M6/16H01M10/0525H01M10/0566H01M10/0567H01M10/36H01M10/42H01M10/40
    • H01M10/0567H01M4/131H01M4/587H01M6/168H01M10/0525H01M10/0566H01M10/4235
    • A nonaqueous electrolyte secondary cell comprising a nonaqueous electrolyte which comprises a lithium ion and a phosphazene derivative having a flash point of 100°C or more (first embodiment), which comprises a supporting electrolyte, an organic solvent and a phosphazene derivative, the electrolyte having a potential window of a range wider than that of the phosphazene derivative (a lower limit value of +0.5 V or lower, a higher limit value of +4.5 V or more) (second embodiment), which comprises a supporting electrolyte and a solution of a lithium salt (0.5 mol/l) having a conductivity of 2.0 mS/cm or more (third embodiment), or which comprises a supporting electrolyte and a phosphazene having a relative permittivity of 15 or more at 25°C and a viscosity of 20 mPa/s (20 cP) or less (fourth embodiment). The nonaqueous electrolyte secondary cell is free from the danger of firing, explosion in the case of short circuit, or the like, has long term stability and safety, has a low internal resistance, and is excellent in various properties such as discharging characteristics at a low temperature, self-extinguishing property or flame retardancy, high voltage and high discharge capacity; and further is easy to manufacture.
    • 一种非水电解质二次电池,其特征在于,由非水电解质构成,所述非水电解质含有锂离子和闪点为100℃以上的磷腈衍生物(第一实施方式),所述非水电解质二次电池含有支持电解质,有机溶剂和磷腈衍生物, (第二实施方式)的范围宽于磷腈衍生物的范围(下限值+ 0.5V以下,上限值+ 4.5V以上)的范围的电位窗口(第二实施方式) (第三实施方式)的导电率为2.0mS / cm以上的锂盐(0.5摩尔/升),或者在25℃下具有支持电解质和相对介电常数为15以上的磷腈的粘度为20 mPa / s(20cP)以下(第4实施方式)。 非水电解质二次电池没有烧成的危险,在短路情况下爆炸等具有长期稳定性和安全性,具有低内阻,并且具有优异的各种性能,例如在 低温,自熄性或阻燃性,高电压和高放电容量; 并且进一步容易制造。
    • 7. 发明公开
    • SILICON CARBIDE SINGLE CRYSTAL, AND METHOD AND APPARATUS FOR PRODUCING THE SAME
    • 碳化硅单晶及其制备方法和设备
    • EP1354987A4
    • 2005-07-20
    • EP01272835
    • 2001-12-21
    • BRIDGESTONE CORP
    • MARUYAMA TAKAYUKIENDO SHIGEKI
    • C30B29/36C30B23/00H01L21/20
    • C30B23/00C30B29/36
    • A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cover body 11 of the graphite crucible 10, the sublimation raw material 40 is sublimated by a first induction heating coil 21 placed at the side of sublimation raw material 40, a re-crystallization atmosphere is form by a second induction heating coil 20 placed at the side of cover body 11 so that the sublimation raw material 40 sublimated by the first induction heating coil 21 is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material 40 is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal 60 is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.