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1. 发明公开

EP3116129A1 PREVENTIVE APPARATUS 有权
标题翻译：主张VORRICHTUNG
公开(公告)号：EP3116129A1
公开(公告)日：2017-01-11
申请号：EP15758498.8
申请日：2015-02-20
申请人： AutoNetworks Technologies, Ltd. , Sumitomo Wiring Systems, Ltd. , Sumitomo Electric Industries, Ltd.
发明人： YANO, Yusuke , TSUKAMOTO, Katsuma
IPC分类号： H03K17/08 , H02H3/08 , H02H7/20 , H03K17/687
CPC分类号： H02H3/10 , H02H1/0007 , H02H3/006 , H02H3/085 , H02H3/087 , H03K17/0822
摘要： A current flows between the drains of FETs 21 and 22, which function as a switch. A first constant current circuit 25 causes a constant current to flow from the FET 21 side of a resistor R1 to the other side thereof. A first comparator 26 outputs a high level voltage to the control section 23 if the electric potential at the drain of the FET 22 is higher than the electric potential at one end, on the first constant current circuit 25 side, of the resistor R1. Furthermore, the first comparator 26 outputs a low level voltage to the control section 23 if the electric potential at the drain of the FET 22 is lower than the electric potential at one end, on the first constant current circuit 25 side, of the resistor R1. The control section 23 turns the FETs 21 and 22 off when the first comparator 26 outputs the low level voltage. Furthermore, the control section 23 changes the current that is caused to flow through the resistor R1 by the first constant current circuit 25.
摘要翻译：在作为开关的FET 21和22的漏极之间流过电流。第一恒流电路25使恒定电流从电阻器R1的FET 21侧流向另一侧。如果FET22的漏极处的电位高于电阻器R1的第一恒定电流电路25侧的一端的电位，则第一比较器26向控制部分23输出高电平电压。此外，如果FET 22的漏极处的电位低于电阻器R1的第一恒定电流电路25侧的一端的电位，则第一比较器26向控制部23输出低电平电压。当第一比较器26输出低电平电压时，控制部分23关断FET 21和22。此外，控制部23通过第一恒流电路25改变流过电阻器R1的电流。

2. 发明公开

EP3065295A1 OVERCURRENT PROTECTION CIRCUIT 有权
标题翻译：过流保护电路
公开(公告)号：EP3065295A1
公开(公告)日：2016-09-07
申请号：EP14858024.4
申请日：2014-10-17
申请人： AutoNetworks Technologies, Ltd. , Sumitomo Wiring Systems, Ltd. , Sumitomo Electric Industries, Ltd.
发明人： TSUKAMOTO, Katsuma , YANO, Yusuke
IPC分类号： H03K17/08 , H02H3/087 , H03K17/687
CPC分类号： H03K17/0822 , H02H3/20 , H02H11/006 , H03K17/18 , H03K2217/0027
摘要： Provided is an overcurrent protection circuit that can cope even with a case where a ground fault occurs in a mask time period for overcurrent detection. The overcurrent protection circuit detects, when a switching element 7 is on, a differential voltage value between both ends of the switching element 7 that is caused by an electric current flowing therethrough, and turns off the switching element 7 when the detected differential voltage value is larger than a predetermined voltage value. A detection circuit 14 that detects respective voltage values at both ends of the switching element 7, and means 14 for preventing the switching element 7 from being turned on if either of the respective voltage values detected by the detection circuit 14 is less than a predetermined value.
摘要翻译：本发明提供一种过电流保护电路，即使在过电流检测用的掩模时间内发生接地故障的情况下也能够应对。当开关元件7接通时，过电流保护电路检测开关元件7的两端之间由电流流过的差分电压值，并且当检测到的差分电压值为大于预定的电压值。检测电路14，其检测开关元件7两端的电压值;以及单元14，其在由检测电路14检测到的各电压值中的任一个小于预定值时，防止开关元件7导通。

3. 发明公开

EP3021485A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP3021485A1
公开(公告)日：2016-05-18
申请号：EP14840936.0
申请日：2014-08-19
申请人： AutoNetworks Technologies, Ltd. , Sumitomo Wiring Systems, Ltd. , Sumitomo Electric Industries, Ltd.
发明人： TSUKAMOTO, Katsuma , YANO, Yusuke
IPC分类号： H03K17/00 , H03K17/08 , H03K17/12 , H03K17/687
CPC分类号： H02H3/207 , H02H1/0007 , H03K17/0822 , H03K17/102 , H03K17/122 , H03K2217/0063
摘要： A semiconductor device is provided in which burning of a semiconductor element can be prevented without incorporating a fuse. The semiconductor device, which includes a plurality of semiconductor elements (3 and 4) that are connected in parallel between a direct current power source and a load (2), is configured to simultaneously turn ON or OFF the plurality of semiconductor elements (3 and 4). The semiconductor device includes a voltage detection means (9) for detecting a voltage value across a fixed potential and a connection node for the plurality of semiconductor elements (3 and 4) and for the load (2), a determining means (1) for determining, if the semiconductor elements (3 and 4) are OFF, whether or not a voltage value detected by the voltage detection means (9) is higher than a predetermined voltage value; and a means (1) for turning the plurality of semiconductor elements (3 and 4) ON when the unit (1) determines that the detected voltage value is higher than the predetermined voltage value.
摘要翻译：提供了一种半导体器件，其中可以在不包含熔丝的情况下防止半导体元件的燃烧。包括并联连接在直流电源和负载（2）之间的多个半导体元件（3和4）的半导体器件被配置为同时接通或断开多个半导体元件（3和4） 4）。该半导体器件包括：电压检测装置（9），用于检测多个半导体元件（3和4）以及负载（2）的固定电位和连接节点两端的电压值;确定装置（1），用于如果半导体元件（3和4）断开，则确定由电压检测装置（9）检测到的电压值是否高于预定电压值; 和当单元（1）确定检测到的电压值高于预定电压值时使多个半导体元件（3和4）导通的装置（1）。

4. 发明授权

EP3065295B1 OVERCURRENT PROTECTION CIRCUIT 有权
公开(公告)号：EP3065295B1
公开(公告)日：2019-08-07
申请号：EP14858024.4
申请日：2014-10-17
申请人： AutoNetworks Technologies, Ltd. , Sumitomo Wiring Systems, Ltd. , Sumitomo Electric Industries, Ltd.
发明人： TSUKAMOTO, Katsuma , YANO, Yusuke
IPC分类号： H03K17/082 , H02H3/087 , H03K17/687 , H03K17/18

5. 发明授权

EP3021485B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3021485B1
公开(公告)日：2018-11-14
申请号：EP14840936.0
申请日：2014-08-19
申请人： AutoNetworks Technologies, Ltd. , Sumitomo Wiring Systems, Ltd. , Sumitomo Electric Industries, Ltd.
发明人： TSUKAMOTO, Katsuma , YANO, Yusuke
IPC分类号： H03K17/00 , H03K17/082 , H03K17/12 , H03K17/687 , H03K17/10
CPC分类号： H02H3/207 , H02H1/0007 , H03K17/0822 , H03K17/102 , H03K17/122 , H03K2217/0063
摘要： A semiconductor device is provided in which burning of a semiconductor element can be prevented without incorporating a fuse. The semiconductor device, which includes a plurality of semiconductor elements (3 and 4) that are connected in parallel between a direct current power source and a load (2), is configured to simultaneously turn ON or OFF the plurality of semiconductor elements (3 and 4). The semiconductor device includes a voltage detection means (9) for detecting a voltage value across a fixed potential and a connection node for the plurality of semiconductor elements (3 and 4) and for the load (2), a determining means (1) for determining, if the semiconductor elements (3 and 4) are OFF, whether or not a voltage value detected by the voltage detection means (9) is higher than a predetermined voltage value; and a means (1) for turning the plurality of semiconductor elements (3 and 4) ON when the unit (1) determines that the detected voltage value is higher than the predetermined voltage value.

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