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1. 发明公开

EP3029716A1 PROCESS FOR PRODUCING COMPOUND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG DES VERBUNDHALBLEITERSUBSTRATS UND HALBLEITERBAUELEMENT
公开(公告)号：EP3029716A1
公开(公告)日：2016-06-08
申请号：EP15196973.0
申请日：2008-09-12
申请人： Asahi Kasei EMD Corporation
发明人： Shibata, Yoshihiko , Miyahara, Masatoshi , Ikeda, Takashi , Kunimi, Yoshihisa
IPC分类号： H01L21/02 , H01L21/203 , H01L21/205 , H01L29/26 , H01L43/06 , H01L29/267 , C30B25/18 , C30B29/40
CPC分类号： H01L29/267 , C30B25/18 , C30B29/40 , H01L21/02381 , H01L21/02546 , H01L21/02658 , H01L43/065
摘要： The present invention relates to a compound semiconductor substrate having a reduced dislocation (defect) density at an interface between a Si substrate and a compound semiconductor layer, and a method for producing the compound semiconductor substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate were removed by subjecting the Si substrate sequentially to organic washing, acid washing and alkaline washing, whereby a flat oxide film (not shown) was formed (S31). The oxide film on the surface was removed by using an aqueous hydrogen fluoride solution having a concentration of 1.0% by weight, whereby hydrogen termination treatment was performed (S32). The Si substrate immediately after being subjected to the hydrogen termination treatment was placed in a vacuum apparatus, and then the temperature of the Si substrate was raised in a vacuum apparatus (S33). If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen was released, pre-irradiation with As was performed (S34). Thus, an interface between the Si substrate and the compound semiconductor layer was prepared. Several minutes later, irradiation with Ga and As was performed (S35). Thereby, the compound semiconductor was formed (S36).
摘要翻译：本发明涉及在Si衬底和化合物半导体层之间的界面处具有减少的位错（缺陷）密度的化合物半导体衬底及其制造方法。通过使Si衬底依次进行有机洗涤，酸洗和碱洗，除去形成平坦氧化物膜（未图示）的Si衬底表面上的有机物和金属等污染物（S31）。使用浓度为1.0重量％的氟化氢水溶液除去表面的氧化膜，由此进行氢终止处理（S32）。将刚刚进行氢终止处理后的Si衬底置于真空装置中，然后在真空装置中升温Si衬底的温度（S33）。如果衬底温度升高而没有任何操作，则释放终止氢。在释放氢之前，进行As的预照射（S34）。因此，制备了Si衬底和化合物半导体层之间的界面。几分钟后，进行Ga和As的照射（S35）。由此形成化合物半导体（S36）。

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