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1. 发明公开

EP0691678A2 Process for plasma etching of vias in a dielectric layer with removal of residues 失效
标题翻译：为接触孔的等离子体蚀刻在电介质层与处置残基的方法
公开(公告)号：EP0691678A2
公开(公告)日：1996-01-10
申请号：EP95110240.9
申请日：1995-06-30
申请人： APPLIED MATERIALS, INC.
发明人： Shan, Hongching , Wu, Robert
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802
摘要： Disclosed is a process for plasma etching a mask patterned dielectric film (10) to form vias (11) on a semiconductor wafer, so that the resulting etched structure is devoid of residues on the walls of the structure. A via (11) is an opening through a dielectric material through which a point of contact of underlying metal (12) with a metal film (14) deposited over the dielectric is made. The underlying metal (12), when exposed to plasma, has a tendency to sputter onto the vertical wall portions of the contact via structures. The metal-containing sputtered material forms a residue that essentially cannot be removed in the subsequent photoresist stripping process typically used in semiconductor manufacturing. The plasma etch process in accordance with the invention enables removal of the sputtered metal by utilizing with the basic dielectric etch gases a gas that reacts with the metal to form volatile compounds which are readily evacuable.
摘要翻译：公开了一种用于等离子体蚀刻的掩模图案化介电影片（10），以形成在半导体晶片上的通孔（11）的方法，所以也将得到的蚀刻结构缺乏结构的墙壁上的残基。通孔（11）是通过穿过该基底金属（12），敷在所述介电的金属片（14）的接触点由电介质材料的开口。下面的金属（12），当暴露于等离子体，具有溅射进入Via结构接触的垂直壁部的倾向。残余物做了本质上含有金属的溅射材料形成不能在半导体制造的通常使用的光致抗蚀剂的后续剥离工艺被去除。在与本发明雅舞蹈的等离子体蚀刻过程通过与碱性电介质蚀刻气体的气体发生反应确实与金属形成，易于抽空的挥发性化合物利用使去除溅射金属的。

2. 发明公开

EP0691678A3 Process for plasma etching of vias in a dielectric layer with removal of residues 失效
标题翻译：为接触孔的等离子体蚀刻在电介质层与处置残基的方法
公开(公告)号：EP0691678A3
公开(公告)日：1997-10-01
申请号：EP95110240.9
申请日：1995-06-30
申请人： APPLIED MATERIALS, INC.
发明人： Shan, Hongching , Wu, Robert
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802
摘要： Disclosed is a process for plasma etching a mask patterned dielectric film (10) to form vias (11) on a semiconductor wafer, so that the resulting etched structure is devoid of residues on the walls of the structure. A via (11) is an opening through a dielectric material through which a point of contact of underlying metal (12) with a metal film (14) deposited over the dielectric is made. The underlying metal (12), when exposed to plasma, has a tendency to sputter onto the vertical wall portions of the contact via structures. The metal-containing sputtered material forms a residue that essentially cannot be removed in the subsequent photoresist stripping process typically used in semiconductor manufacturing. The plasma etch process in accordance with the invention enables removal of the sputtered metal by utilizing with the basic dielectric etch gases a gas that reacts with the metal to form volatile compounds which are readily evacuable.

3. 发明公开

EP0892422A3 Improvements in or relating to plasma reactors 失效
标题翻译：在等离子体反应器的改进
公开(公告)号：EP0892422A3
公开(公告)日：1999-04-14
申请号：EP98305588.0
申请日：1998-07-14
申请人： Applied Materials, Inc.
发明人： Collins, Kenneth , Rice, Michael , Buchberger, Douglas , Roderick, Craig , Askarinam, Eric , Schneider, Gerhard , Trow, John , Tsui, Joshua , Grimard, Dennis , Yin, Gerald , Wu, Robert
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： A plasma reactor has a chamber (50) for containing a plasma and a passageway (60) communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing (20,10) and a first plasma confinement magnet (80) inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing (20,20), and a second plasma confinement magnet (82). Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent to a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing (20,20) can rest upon the chamber side wall and the chamber ceiling (52) can rest upon the module housing.

4. 发明公开

EP0892422A2 Improvements in or relating to plasma reactors 失效
标题翻译：有关等离子反应器的改进
公开(公告)号：EP0892422A2
公开(公告)日：1999-01-20
申请号：EP98305588.0
申请日：1998-07-14
申请人： Applied Materials, Inc.
发明人： Collins, Kenneth , Rice, Michael , Buchberger, Douglas , Roderick, Craig , Askarinam, Eric , Schneider, Gerhard , Trow, John , Tsui, Joshua , Grimard, Dennis , Yin, Gerald , Wu, Robert
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： A plasma reactor has a chamber (50) for containing a plasma and a passageway (60) communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing (20,10) and a first plasma confinement magnet (80) inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing (20,20), and a second plasma confinement magnet (82). Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent to a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing (20,20) can rest upon the chamber side wall and the chamber ceiling (52) can rest upon the module housing.
摘要翻译：等离子体反应器具有用于容纳等离子体的腔室（50），与腔室连通的通道（60）通过邻近通道放置的第一可移除等离子体约束磁体模块得到增强，所述第一可移除等离子体约束磁体模块包括第一模块壳体（20,10）和第一模块壳体等离子体约束磁体（80）。它还可以包括邻近通道放置的第二可移除等离子体约束磁体模块，第二等离子体约束磁体模块包括第二模块壳体（20,20）和第二等离子体约束磁体（82）。优选地，第一和第二模块位于通道的相对侧上。此外，第一和第二等离子体约束磁体具有倾向于阻止等离子体传输或通过通道泄漏的磁性取向。优选地，模块壳体包括诸如铝的相对非磁性的热导体并且与所述腔室主体热接触。冷却设备可热耦合到腔室主体，由此将第一等离子体约束磁体保持在其居里温度以下。如果反应器包括邻近腔室外围的泵送环形空间，则通道可以是在腔室和泵送环形空间之间连通的通道。而且，通道可以是晶片狭缝阀或气体供给入口。这种气体供给入口可以是通过腔室顶部的中心气体供给。模块壳体（20,20）可以搁置在腔室侧壁上并且腔室天花板（52）可以搁置在模块壳体上。

5. 发明公开

EP0635869A1 Semiconductor processing apparatus, method of making and use of same 失效
标题翻译： Halbleiterbehandlungsvorrichtung，Verfahren zur Herstellung und Verwendung desselben。
公开(公告)号：EP0635869A1
公开(公告)日：1995-01-25
申请号：EP94106342.2
申请日：1994-04-22
申请人： APPLIED MATERIALS, INC.
发明人： Wu, Robert , Ding, Jian
IPC分类号： H01L21/00
CPC分类号： H01L21/6831
摘要： A wafer support apparatus used for electrostatic clamping of a wafer to the wafer support is disclosed, wherein a dielectric material, formed on the surface of a wafer support facing the wafer to facilitate the electrostatic clamping, has a protective coating formed over the dielectric material to provide protection to the dielectric material against chemical attack from chemicals used during the processing of the semiconductor wafer. In a preferred embodiment, the protective coating comprises an aluminum compound, such as an oxide of aluminum or aluminum nitride, having a thickness ranging from 1 µm to 30 µm, but not exceeding about 50% of the thickness of the dielectric material so as to not interfere with the electrostatic charge used for clamping the wafer to the wafer support. Also disclosed is a method for making the wafer support apparatus to protect the dielectric material on a wafer support, and use of same in a process for forming integrated circuit structures.
摘要翻译：公开了一种用于将晶片静电夹持到晶片支架的晶片支撑装置，其中形成在面向晶片的晶片支架的表面上以便于静电夹持的电介质材料具有形成在电介质材料上的保护涂层为介电材料提供保护，防止在半导体晶片的加工期间使用的化学物质的化学侵蚀。在优选的实施方案中，保护涂层包括铝化合物，例如铝或氮化铝的氧化物，其厚度范围为1μm至30μm，但不超过介电材料厚度的约50％，因此以免干扰用于将晶片夹持到晶片支架上的静电电荷。还公开了一种制造晶片支撑装置以保护晶片载体上的电介质材料的方法，并且在用于形成集成电路结构的工艺中使用它们的方法。

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