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1. 发明授权

EP0996164B1 An elevated pin diode active pixel sensor including a unique interconnection structure 有权
标题翻译：具有增加的pin二极管和一个特殊的连接结构有源图像传感器
公开(公告)号：EP0996164B1
公开(公告)日：2006-06-28
申请号：EP99307737.9
申请日：1999-09-30
申请人： Agilent Technologies, Inc. (a Delaware corporation)
发明人： Theil, Jeremy A. , Cao, Min , Vook, Dietrich W. , Perner, Frederick A. , Sun, Xin , Ma, Shawming , Ray, Gary W.
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14643 , H01L31/02002

2. 发明公开

EP1237197A2 Amorphous semiconductor open base phototransistor array 审中-公开
标题翻译： Matrix von Phototransistoren aus amorphem Halbleitermaterial mit offener Basis
公开(公告)号：EP1237197A2
公开(公告)日：2002-09-04
申请号：EP01127030.3
申请日：2001-11-14
申请人： Agilent Technologies, Inc. (a Delaware corporation)
发明人： Voorde, Paul J. Vande , Perner, Frederick A. , Vook, Dietrich W. , Cao, Min
IPC分类号： H01L27/146 , H01L31/0376 , H01L51/20
CPC分类号： H01L31/0376 , H01L27/14681 , Y02E10/50
摘要： An array of light-sensitive sensors utilizes bipolar phototransistors (10 and 12; 68 and 70) that are formed of multiple amorphous semi-conductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes that are generated by reception of incoming photons to a particular open base phototransistor provide current injection to the base region (18; 63 and 65; 78) of the phototransistor. The collector region (20; 62 and 64; 80) is preferably an intrinsic amorphous silicon layer. The phototransistors may be operated in either an integrating mode in which bipolar current is integrated or a static mode in which a light-responsive voltage is monitored.
摘要翻译：一系列感光传感器使用由诸如硅的多个非晶半导体层形成的双极光电晶体管（10和12; 68和70）。在优选实施例中，双极晶体管是开放式基极器件。在该优选实施例中，通过将入射光子接收到特定的开放式基极光电晶体管产生的空穴向光电晶体管的基极区域（18; 63和65; 78）提供电流注入。集电极区域（20; 62和64; 80）优选为本征非晶硅层。光电晶体管可以在其中集成双极性电流的积分模式或其中监视光响应电压的静态模式中操作。

3. 发明公开

EP1052698A3 Interlayer dielectric for integrated circuit 审中-公开
标题翻译：用于集成电路层间介电层
公开(公告)号：EP1052698A3
公开(公告)日：2001-08-29
申请号：EP00303822.1
申请日：2000-05-08
申请人： Agilent Technologies Inc. a Delaware Corporation
发明人： Theil, Jeremy A. , Perner, Frederick A. , Ray, Gary W. , Cao, Min
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L31/02005
摘要： An integrated circuit sensor structure. The integrated circuit sensor structure includes a substrate [200] which includes electronic circuitry. An interconnect structure [210] is adjacent to the substrate [200]. The interconnect structure [210] includes conductive interconnect vias [214, 216, 218] which pass through the interconnect structure [210]. A dielectric layer [220] is adjacent to the interconnect structrure [210]. The dielectric layer [220] includes a planar surface [228], and conductive vias [222, 224, 226] which pass through the dielectric layer [220] and are electrically connected to the interconnect vias [214, 216, 218]. The dielectric layer [220] further includes an interlayer planarization dielectric layer [230] adjacent to the interconnect structure [210], and a passivating layer [240] adjacent to the interlayer planarization dielectric layer [230]. The integrated circuit sensor structure further includes sensors adjacent to the dielectric layer [220]. The interconnect vias [214, 216, 218] and the vias [222, 224, 226] electrically connect the electronic circuitry to the sensors.

4. 发明公开

EP1237197A3 Amorphous semiconductor open base phototransistor array 审中-公开
标题翻译：具有开放的基非晶半导体材料的光电晶体管的矩阵
公开(公告)号：EP1237197A3
公开(公告)日：2005-06-22
申请号：EP01127030.3
申请日：2001-11-14
申请人： Agilent Technologies, Inc. (a Delaware corporation)
发明人： Voorde, Paul J. Vande , Perner, Frederick A. , Vook, Dietrich W. , Cao, Min
IPC分类号： H01L27/146 , H01L31/0376 , H01L51/20 , H01L31/11
CPC分类号： H01L31/0376 , H01L27/14681 , Y02E10/50
摘要： An array of light-sensitive sensors utilizes bipolar phototransistors (10 and 12; 68 and 70) that are formed of multiple amorphous semi-conductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes that are generated by reception of incoming photons to a particular open base phototransistor provide current injection to the base region (18; 63 and 65; 78) of the phototransistor. The collector region (20; 62 and 64; 80) is preferably an intrinsic amorphous silicon layer. The phototransistors may be operated in either an integrating mode in which bipolar current is integrated or a static mode in which a light-responsive voltage is monitored.

5. 发明授权

EP1006585B1 Color detection active pixel sensors 有权
标题翻译：用于颜色检测的有源像素传感器
公开(公告)号：EP1006585B1
公开(公告)日：2005-05-04
申请号：EP99309267.5
申请日：1999-11-22
申请人： Agilent Technologies Inc. a Delaware Corporation
发明人： Cao, Min , Vande Voorde, Paul J. , Perner, Frederick A. , Vook, Dietrich W.
IPC分类号： H01L27/146 , H01L31/09 , H01L31/11
CPC分类号： H01L27/14609 , H01L27/14647

6. 发明公开

EP0959502A3 Photodetector 有权
标题翻译： Fotodetektor
公开(公告)号：EP0959502A3
公开(公告)日：2001-08-08
申请号：EP99303245.7
申请日：1999-04-27
申请人： Agilent Technologies Inc. a Delaware Corporation
发明人： Perner, Frederick A.
IPC分类号： H01L27/144
CPC分类号： H01L27/1443
摘要： A high gain photodetector[10] requiring a substantially smaller space than prior art photodetectors having the same gain. The photodetector[10] includes a light converter[31, 42] for converting a light signal to a current; and a first vertical transistor[32]. The first vertical transistor[32] includes a first well[51] in a semiconductor substrate[41], the first well[51] including a diffusion region, the semiconductor substrate[41] and the diffusion having a first type of doping and the first well[51] having a second type of doping. The first type of doping is either P-type or N-type, and the second type of doping is the other of the P-type or N-type doping. The light converter[31, 42] is connected to the first well[51] so as to forward bias the vertical transistor thereby causing a current to flow between the diffusion region in the first well [51] and the substrate. Additional amplification of the photocurrent from the light converter[31, 42] can be provided by including a second verticai transistor[33]. The second vertical transistor[33] includes a second well[61] in the semiconductor substrate[41], the second well[61] including a second diffusion region[63]. The semiconductor substrate[41] and the second diffusion having the first type of doping and the second well[61] having the second type of doping. The first vertical transistor[32] and the second vertical transistor[33] are connected as a Darlington pair. The amplified current from the vertical transistor(s) is converted to a voltage by a current to voltage converter[20].
摘要翻译：高增益光电检测器需要比具有相同增益的现有技术光电探测器更小的空间。光电检测器10910包括用于将光信号转换为电流的光转换器3131,42Ü; 和第一垂直晶体管。第一垂直晶体管Ä32包括半导体衬底Ä41a中的第一阱，第一阱包括扩散区，半导体衬底Ä41Ü和扩散具有第一类掺杂，第一阱具有第二类掺杂。第一种类型的掺杂是P型或N型，第二种类型的掺杂是P型或N型掺杂中的另一种。光转换器31a31,42u连接到第一阱51，以便对垂直晶体管进行正向偏置，从而使电流在第一阱Ä51the中的扩散区和衬底之间流动。通过包括第二垂直晶体管2333可以提供来自光转换器31a31,42u的光电流的附加放大。第二垂直晶体管2333包括半导体衬底中的第二阱316，第二阱183包括第二扩散区。半导体衬底和第二扩散层具有第一类掺杂，第二扩散层具有第二类掺杂。第一垂直晶体管2332和第二垂直晶体管2333以达林顿对连接。来自垂直晶体管的放大电流通过电流到电压转换器转换成电压。

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