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1. 发明授权

EP0380243B1 Distributed bragg reflector laser for frequency modulated communication systems 失效
标题翻译：激光具有用于频率调制的通信系统中分布反射。
公开(公告)号：EP0380243B1
公开(公告)日：1994-04-06
申请号：EP90300559.3
申请日：1990-01-18
申请人： AT&T Corp.
发明人： Chraplyvy, Andrew R. , Koch, Thomas L. , Tkach, Robert W.
IPC分类号： H01S3/085 , H01S3/103 , H04B10/12
CPC分类号： H01S5/06256 , H01S5/0618 , H01S5/125

2. 发明公开

EP0380242A2 Distributed feedback laser for frequency modulated communication systems 失效
标题翻译：激光切割机RückkoppelungfürFrequenzmodulierte Kommunikationssysteme。
公开(公告)号：EP0380242A2
公开(公告)日：1990-08-01
申请号：EP90300558.5
申请日：1990-01-18
申请人： AT&T Corp.
发明人： Chraplyvy, Andrew R. , Koch, Thomas L. , Tkach, Robert W.
IPC分类号： H01S3/085 , H01S3/103 , H04B10/12
CPC分类号： H01S5/0622 , H01S5/0618 , H01S5/06209 , H01S5/12 , H01S5/124
摘要： To overcome the deleterious effects of the nonuniform frequency modulation response in semiconductor lasers due to current injection in direct frequency modulation applications, it has been determined that the linewidth enhancement factor α be made as large as possible. In one embodiment, distributed feedback lasers well suited for frequency modulation lightwave communication systems are designed to have an integrated feedback element such as a corrugation grating whose effective pitch is selected to cause the Bragg wavelength and, therefore, the laser operating wavelength to be longer than the wavelength at substantially the maximum gain or gain peak in the semiconductor structure without the grating. That is, the wavelength of the grating is effectively detuned toward the longer wavelength and lower energy side of the peak of the gain profile. Such detuning increases the linewidth enhancement factor in such a way that the nonuniform frequency modulation response and its effects are minimized and, in some cases, substantially eliminated.
摘要翻译：为了克服由于在直接调频应用中的电流注入引起的半导体激光器中的不均匀的频率调制响应的有害影响，已经确定线宽增强因子α尽可能大。在一个实施例中，非常适合于频率调制光波通信系统的分布反馈激光器被设计成具有集成反馈元件，例如波纹光栅，其有效间距被选择以引起布拉格波长，因此激光器工作波长比在没有光栅的半导体结构中的基本上最大增益或增益峰值的波长。也就是说，光栅的波长对增益曲线的峰值的较长波长和较低能量侧被有效地失谐。这种失谐增加了线宽增强因子，使得非均匀的频率调制响应及其影响被最小化，并且在一些情况下基本上被消除。

3. 发明授权

EP0422854B1 Optical amplifier-photodetector device 失效
标题翻译：光放大器的光检测器阵列。
公开(公告)号：EP0422854B1
公开(公告)日：1995-08-09
申请号：EP90310960.1
申请日：1990-10-05
申请人： AT&T Corp.
发明人： Halemane, Thirumala Raya , Koch, Thomas L. , Korotky, Steven K.
IPC分类号： G02B6/12 , H01L31/109
CPC分类号： H01S5/50 , G02B6/12004 , G02B6/34 , G02B6/42 , H01S5/0264

4. 发明公开

EP0380243A2 Distributed bragg reflector laser for frequency modulated communication systems 失效
标题翻译：激光打标机反光镜。
公开(公告)号：EP0380243A2
公开(公告)日：1990-08-01
申请号：EP90300559.3
申请日：1990-01-18
申请人： AT&T Corp.
发明人： Chraplyvy, Andrew R. , Koch, Thomas L. , Tkach, Robert W.
IPC分类号： H01S3/085 , H01S3/103 , H04B10/12
CPC分类号： H01S5/06256 , H01S5/0618 , H01S5/125
摘要： To overcome the deleterious effects of the nonuniform frequency modulation response in semiconductor lasers due to current injection in direct frequency modulation applications, it has been determined that the linewidth enhancement factor α be made as large as possible. In one embodiment, distributed Bragg reflector lasers well suited for frequency modulation lightwave communication systems are designed to have an integrated feedback element such as a corrugation grating whose effective pitch is selected to cause the Bragg wavelength and, therefore, the laser operating wavelength to be longer than the wavelength at substantially the maximum gain or gain peak in the semiconductor structure. That is, the wavelength of the grating is effectively detuned toward the longer wavelength and lower energy side of the peak of the gain profile. Such detuning increases the linewidth enhancement factor in such a way that the nonuniform frequency modulation response and its effects are minimized and, in some cases, substantially eliminated.
摘要翻译：为了克服由于在直接调频应用中的电流注入引起的半导体激光器中的不均匀的频率调制响应的有害影响，已经确定线宽增强因子α尽可能大。在一个实施例中，非常适合于频率调制光波通信系统的分布式布拉格反射器激光器被设计为具有集成反馈元件，例如波纹光栅，其有效间距被选择以引起布拉格波长，因此激光器工作波长更长比基本上在半导体结构中的最大增益或增益峰值的波长。也就是说，光栅的波长对增益曲线的峰值的较长波长和较低能量侧被有效地失谐。这种失谐增加了线宽增强因子，使得非均匀的频率调制响应及其影响被最小化，并且在一些情况下基本上被消除。

5. 发明公开

EP0651277A1 Optical modulators as monolithically integrated optical isolators 失效
标题翻译： Optische Modulatoren als monolithisch integrierte optische Isolatoren。
公开(公告)号：EP0651277A1
公开(公告)日：1995-05-03
申请号：EP94307849.3
申请日：1994-10-26
申请人： AT&T Corp.
发明人： Koch, Thomas L. , Koyama, Fumio , Liou, Kang-Yih
IPC分类号： G02F1/01 , H01S3/00 , H01S3/103 , H01S3/025 , G02F1/025
CPC分类号： G02F1/0121 , G02F1/025 , H01S3/0064 , H01S5/0265 , H01S5/0625
摘要： An apparatus and technique for providing isolation for a signal source utilizing two or more modulators is described. In particular, the apparatus generates a timed sequence of "open gates" that are synchronized to the data signal which permit transmission in a forward direction, and which attenuate a reverse direction signal. Another embodiment attenuates primarily reflected light signals by utilizing a passive waveguide and a modulator. The passive waveguide provides a propagation delay such that signals reflected from its end facet are attenuated by the modulator. The apparatus is suitable for use as an isolator for a light source in a high-speed optical fiber data transmission system.
摘要翻译：描述了一种利用两个或多个调制器为信号源提供隔离的装置和技术。特别地，该装置产生与允许向前传输的数据信号同步的“开放门”的定时序列，并且衰减反向信号。另一实施例通过利用无源波导和调制器主要衰减反射光信号。无源波导提供传播延迟，使得从其端面反射的信号被调制器衰减。该装置适用于高速光纤数据传输系统中的光源隔离器。

6. 发明授权

EP0411816B1 Tapered semiconductor waveguides and method of making same 失效
标题翻译：锥形半导体波导，和方法，用于其生产。
公开(公告)号：EP0411816B1
公开(公告)日：1994-09-21
申请号：EP90308134.7
申请日：1990-07-25
申请人： AT&T Corp.
发明人： Koch, Thomas L. , Koren, Uziel
IPC分类号： G02B6/12
CPC分类号： H01S5/1032 , G02B6/1228 , G02B6/136 , G02B6/305 , H01L21/30612 , H01S5/1014

7. 发明公开

EP0380242A3 Distributed feedback laser for frequency modulated communication systems 失效
标题翻译：用于频率调制通信系统的分布式反馈激光
公开(公告)号：EP0380242A3
公开(公告)日：1991-06-05
申请号：EP90300558.5
申请日：1990-01-18
申请人： AT&T Corp.
发明人： Chraplyvy, Andrew R. , Koch, Thomas L. , Tkach, Robert W.
IPC分类号： H01S3/085 , H01S3/103 , H04B10/12
CPC分类号： H01S5/0622 , H01S5/0618 , H01S5/06209 , H01S5/12 , H01S5/124
摘要： To overcome the deleterious effects of the nonuniform frequency modulation response in semiconductor lasers due to current injection in direct frequency modulation applications, it has been determined that the linewidth enhancement factor α be made as large as possible. In one embodiment, distributed feedback lasers well suited for frequency modulation lightwave communication systems are designed to have an integrated feedback element such as a corrugation grating whose effective pitch is selected to cause the Bragg wavelength and, therefore, the laser operating wavelength to be longer than the wavelength at substantially the maximum gain or gain peak in the semiconductor structure without the grating. That is, the wavelength of the grating is effectively detuned toward the longer wavelength and lower energy side of the peak of the gain profile. Such detuning increases the linewidth enhancement factor in such a way that the nonuniform frequency modulation response and its effects are minimized and, in some cases, substantially eliminated.

8. 发明公开

EP0556952A1 Wavelength selective coupler 失效
标题翻译： WellenlängenselektiverKoppler。
公开(公告)号：EP0556952A1
公开(公告)日：1993-08-25
申请号：EP93300357.6
申请日：1993-01-20
申请人： AT&T Corp.
发明人： Alferness, Rodney C. , Buhl, Lawrence L. , Koch, Thomas L. , Koren, Uziel
IPC分类号： G02B6/12 , G02F1/313 , H01S3/06
CPC分类号： H01S5/06256 , G02B6/12004 , G02B6/12007 , G02F1/3133 , G02F2001/3135 , G02F2203/055 , H01S5/1032 , H01S5/1035 , H01S5/3428
摘要： Various optical functions are generated in accordance with the present invention of a novel broadly tunable monolithic wavelength selective coupler which can be integrated with a gain medium to form a broadly tunable laser. The tunable wavelength selective coupler supports a pair of asynchronous waveguides (16,18), an upper waveguide and a lower waveguide, in combination with a phase match course grating for coupling optical energy between said waveguides. One end of the lower waveguide terminates at an output facet. The corresponding end of the upper waveguide terminates in an optical signal absorbing medium (14). The other end of the lower waveguide is terminated to prevent optical energy from entering the waveguide; and, the corresponding end of the upper waveguide terminates at an input facet. The combination of a gain section and the monolithically tunable wavelength selective coupler forms a broadly tunable laser which is an important source of optical energy for a number of applications such as wavelength division multiplexed networks and switching systems. The laser frequency is determined by that wavelength λo which satisfies the forward coupling phase match condition, λg = Λ|N₂ - N₁| of the coupler where Λ is the coarse gating period and N₁,N₂ are the effective indices of the two waveguides. Wavelengths which are not coupled from the upper waveguide to the lower waveguide are attenuated in the optical signal absorbing means. Tuning of the laser wavelength is achieved by either injecting current into or applying a reverse bias voltage to the upper waveguide to decrease or increase its index respectively and change the coupled wavelength.
摘要翻译：根据本发明，可以根据本发明生成各种光学功能，其可以与增益介质集成以形成广泛可调谐的激光器。可调波长选择耦合器支持一对异步波导（16,18），上波导和下波导，与用于耦合所述波导之间的光能的相位匹配路线光栅组合。下波导的一端在输出端终止。上波导的相应端部终止于光信号吸收介质（14）中。端接下波导的另一端以防止光能进入波导; 并且上波导的对应端在输入端终止。增益部分和单片可调波长选择耦合器的组合形成广泛可调的激光器，其是诸如波分复用网络和交换系统之类的诸多应用的重要光能源。激光频率由满足正向耦合相位匹配条件的波长λo确定，其中LAMBDA是粗门控周期的耦合器的λg = LAMBDA | N2-N1，N1，N2是两个波导的有效索引。在光信号吸收装置中衰减从上波导到下波导未耦合的波长。通过向上波导注入电流或施加反向偏置电压来分别降低或增加其折射率并改变耦合波长来实现激光波长的调谐。

9. 发明公开

EP0422854A3 Optical amplifier-photodetector device 失效
标题翻译：光放大器 - 光电设备
公开(公告)号：EP0422854A3
公开(公告)日：1992-02-26
申请号：EP90310960.1
申请日：1990-10-05
申请人： AT&T Corp.
发明人： Halemane, Thirumala Raya , Koch, Thomas L. , Korotky, Steven K.
IPC分类号： G02B6/12 , H01L31/109
CPC分类号： H01S5/50 , G02B6/12004 , G02B6/34 , G02B6/42 , H01S5/0264
摘要： The device here disclosed comprises an optical amplifier (12) coupled to direct optical energy into a passive wavegulde (16,14,21) for transmission through the waveguide to its other end. A photodetector (8) positioned relative to the passive waveguide, detects the presence of optical energy in the passive waveguide. The photodetector in the structure illustrated is positioned downstream from the optical amplifier and spatially positioned with respect to the optical amplifier to receive optical energy only from the waveguide. The photodetector does not receive optical energy directly from the optical amplifier. A small fraction of the optical energy carried by the passive waveguide is received and detected by the photodetector.

10. 发明公开

EP0411816A3 Tapered semiconductor waveguides and method of making same 失效
标题翻译：切割半导体波形及其制造方法
公开(公告)号：EP0411816A3
公开(公告)日：1991-11-06
申请号：EP90308134.7
申请日：1990-07-25
申请人： AT&T Corp.
发明人： Koch, Thomas L. , Koren, Uziel
IPC分类号： G02B6/12
CPC分类号： H01S5/1032 , G02B6/1228 , G02B6/136 , G02B6/305 , H01L21/30612 , H01S5/1014
摘要： Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis of the waveguide further than the guiding layer immediately adjacent thereabove to create a staircase-like core or guiding structure. Cladding regions of appropriate semiconductor material having a lower index of refraction than the tapered core structure may be added to completely surround the tapered guiding structure. The profile of the tapered structure is realizable as any desired staircase-like shape such as linear, parabolic, exponential or the like. Additional layers of higher index of refraction semiconductor material may be included in the cladding region to permit additional beam shaping of the expanded spatial mode propagating along the tapered waveguide. Photolithographic masks defining successively larger exposed areas are aligned, deposited over the waveguide structure, and then removed following each etching step. Material selective etching techniques are employed to remove exposed (unmasked) portions of guiding layers. In sequence, the exposed, formerly underlying portions of the stop-etch layers are then removed using material selective etching. Iteration of the above process steps permits a tapered waveguide structure to be defined.

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