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1. 发明公开

EP2540863A4 CVD PROCESSING METHOD AND CVD DEVICE USING SAID METHOD 审中-公开
标题翻译： CVD程序及CVD设备符合程序
公开(公告)号：EP2540863A4
公开(公告)日：2014-07-30
申请号：EP10846412
申请日：2010-02-23
申请人： TEOSS CO LTD
发明人： MURAI TSUYOSHI , KONAKA TOSHINORI , SUZUKI MASAYUKI
IPC分类号： C23C16/46 , C23C16/24 , C23C16/44 , C30B25/10
CPC分类号： C23C16/24 , C23C16/4401 , C23C16/46 , C30B25/10

2. 发明公开

EP2500080A2 Protective filter for vacuum pump 审中-公开
标题翻译： Schutzfilterfürein Vakuoperumpe
公开(公告)号：EP2500080A2
公开(公告)日：2012-09-19
申请号：EP11186112.6
申请日：2011-10-21
申请人： Teoss CO., LTD.
发明人： Murai, Tsuyoshi , Konaka, Toshinori
IPC分类号： B01D46/36 , B01D46/00
CPC分类号： B01D46/0036 , B01D46/0056 , B01D46/36 , B01D2273/28
摘要： A protective filter (A) for vacuum pump comprises: a casing (1) being supplied exhaust gas (H) including microparticles and accommodating microparticle collection liquid (4) inside; a rotating drum (2) having a rotating cylinder (16) and a basket (19), being filled a filler (5) for collecting the microparticles, rotating inside the casing (1) immersing a part of the filler (5) to the microparticle collection liquid (4), the exhaust gas (H) supplied into the casing (1) flows into the rotating cylinder (16) contacting the microparticle collection liquid (4) at a surface of the filler (5), the exhaust gas (H) is discharged through an opening (6) provided at one end of the rotating cylinder (16); a roller (40) rotating the basket (19); and a connecting pipe (7) having an opening facing the opening (6) of the rotating cylinder (16), fixed to the casing (1), and connected to the vacuum pump (C).
摘要翻译：一种用于真空泵的保护过滤器（A），包括：一个壳体（1），其内部包含微粒和容纳微粒收集液体（4）的废气（H）; 具有旋转圆筒（16）和篮子（19）的旋转滚筒（2），填充有用于收集微粒的填料（5），在所述壳体（1）的内部旋转，将所述填料（5）的一部分浸入微粒收集液体（4）中，供给到壳体（1）中的废气（H）流入与填料（5）的表面接触微粒收集液（4）的旋转圆筒（16），排气 H）通过设置在旋转圆筒（16）的一端的开口（6）排出; 使所述篮子（19）旋转的滚筒（40）; 以及连接管（7），其具有面向所述旋转圆筒（16）的开口（6）的开口，固定到所述壳体（1）并连接到所述真空泵（C）。

3. 发明公开

EP2319801A4 SILICON STARTING MATERIAL CRUSHING DEVICE 审中-公开
标题翻译：破碎装置对于硅起始原料
公开(公告)号：EP2319801A4
公开(公告)日：2013-05-01
申请号：EP09848447
申请日：2009-08-20
申请人： TEOSS CO LTD
发明人： MURAI TSUYOSHI , KONAKA TOSHINORI
IPC分类号： C01B33/02 , B02C1/10
CPC分类号： C01B33/02 , B02C1/005 , B02C1/04 , B02C1/046

4. 发明公开

EP2510996A1 Protective filter 审中-公开
标题翻译： Schutzfilter
公开(公告)号：EP2510996A1
公开(公告)日：2012-10-17
申请号：EP12155727.6
申请日：2012-02-16
申请人： Teoss CO., LTD.
发明人： Murai, Tsuyoshi , Konaka, Toshinori
IPC分类号： B01D46/22 , B01D46/00
CPC分类号： B01D46/22 , B01D46/0035
摘要： The protecting filter (10) comprises: a casing (12) having an inner space (19); an exhaust gas intake pipe (14) guiding exhaust gas (H) with microparticles; a rotating body (16) supported rotatably on the centre axis of the exhaust gas intake pipe (14) and at an opening of the exhaust gas intake pipe (14) inside the casing (12); and an endless belt (18) provided rotatably inside the casing (12) and facing the opening of the exhaust gas intake pipe (14) across the rotating body (16) and including microparticle collection liquid (L) at least on its surface, wherein the surface of the endless belt (18) contacts the rotating body (16), the rotating body (16) is rotated by rotation of the endless belt (18), the microparticle collection liquid (L) on the surface of the endless belt (18) is applied to a surface of the rotating body (16).
摘要翻译：保护过滤器（10）包括：具有内部空间（19）的壳体（12）; 用微粒引导废气（H）的排气入口管（14）; 旋转体（16），其可旋转地支撑在所述排气入口管（14）的中心轴线上，并且位于所述壳体（12）的内部的所述排气入口管（14）的开口处。以及环形带（18），其可旋转地设置在所述壳体（12）内并且横跨所述旋转体（16）面对所述废气吸入管（14）的开口，并且至少在其表面上包括微粒收集液体（L），其中环形带（18）的表面与旋转体（16）接触，旋转体（16）通过环形带（18）的旋转，环形带的表面上的微粒收集液（L） 18）施加到旋转体（16）的表面。

5. 发明授权

EP2184574B1 SILICON HEATING FURNACE 有权
标题翻译：硅加热炉
公开(公告)号：EP2184574B1
公开(公告)日：2012-09-19
申请号：EP07792038.7
申请日：2007-08-06
申请人： Teoss CO., LTD.
发明人： MURAI, Tsuyoshi , KONAKA, Toshinori
IPC分类号： F27B17/00 , B02C19/00 , B02C19/18
CPC分类号： F27B17/0016 , C01B33/00 , C30B29/06 , C30B35/00 , F27D99/0006 , H01L21/67109 , Y02P20/124

6. 发明公开

EP2184574A4 SILICON HEATING FURNACE 有权
标题翻译： SILIZIUMHEIZOFEN
公开(公告)号：EP2184574A4
公开(公告)日：2011-01-26
申请号：EP07792038
申请日：2007-08-06
申请人： TEOSS CO LTD
发明人： MURAI TSUYOSHI , KONAKA TOSHINORI
IPC分类号： F27B17/00 , B02C19/00 , B02C19/18
CPC分类号： F27B17/0016 , C01B33/00 , C30B29/06 , C30B35/00 , F27D99/0006 , H01L21/67109 , Y02P20/124

7. 发明公开

EP2540863A1 CVD PROCESSING METHOD AND CVD DEVICE USING SAID METHOD 审中-公开
标题翻译： CVD-BEARBEITUNGSVERFAHREN UND CVD-VORRICHTUNG MIT DEM VERFAHREN
公开(公告)号：EP2540863A1
公开(公告)日：2013-01-02
申请号：EP10846412.4
申请日：2010-02-23
申请人： Teoss CO., LTD.
发明人： MURAI, Tsuyoshi , KONAKA, Toshinori , SUZUKI, Masayuki
IPC分类号： C23C16/46 , C23C16/24 , C30B25/10
CPC分类号： C23C16/24 , C23C16/4401 , C23C16/46 , C30B25/10
摘要： A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate (S) to a pair of electrode mounts (28a), (28b) ; lowering a resistance value of the silicon substrate (S) by raising temperature of the silicon substrate (S) with heat from an outer heater (23) provided outside the case (14); heating the silicon substrate (S) to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space (66) by stopping the outer heater (23); and forming a thin film on a surface of the silicon substrate (S) by injecting source gas (G) into the CVD space (66), when the silicon substrate (S) is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space (66) is lowered to a predetermined temperature.
摘要翻译：一种用于CVD处理的方法，包括以下步骤：将硅衬底（S）的两端固定到一对电极安装件（28a），（28b）上; 通过从设置在壳体14外部的外部加热器23的热量升高硅衬底（S）的温度来降低硅衬底（S）的电阻值; 通过施加电流将硅衬底（S）加热到能够开始CVD工艺的温度，并且通过停止外部加热器（23）降低CVD空间（66）中的气氛温度; 以及当所述硅衬底（S）被加热到能够开始所述CVD工艺的温度时，通过将源气体（G）注入到所述CVD空间（66）中，在所述硅衬底（S）的表面上形成薄膜并且CVD空间（66）中的气氛温度降低到预定温度。

8. 发明授权

EP2062854B1 SILICON SUPPORTING DEVICE AND SILICON HEATING RAPIDLY COOLING APPARATUS UTILIZING THE SAME 有权
标题翻译：硅支撑设备和设备加热和SO散热快SILICON
公开(公告)号：EP2062854B1
公开(公告)日：2011-12-28
申请号：EP07791951.2
申请日：2007-08-03
申请人： Teoss CO., LTD.
发明人： MURAI, Tsuyoshi , KONAKA, Toshinori
IPC分类号： C01B33/02 , B02C19/18
CPC分类号： C30B29/06 , C30B15/00 , C30B35/00 , C30B35/002
摘要： A silicon supporting device that is free from deteriorating of the purity of raw material silicon and ensures easy maintenance; and a silicon heating rapidly cooling apparatus utilizing the same. Silicon supporting device (14) is constructed of multiple pipes (32) each provided with internal flow passage channel (34) for flow passage of cooling medium (L), these pipes arranged with given spacing therebetween, and includes silicon supporting section (22) for supporting raw material silicon (12); titanium-made contact preventive members (24) disposed in contact with the external surfaces of pipes (32) and interposed between the raw material silicon (12) and the pipes (32) to thereby prevent contact between the raw material silicon (12) and the pipes (32); and titanium-made fixing members (26) for fixing the contact preventive members (24) to the pipes (32).

9. 发明公开

EP2224471A1 THICKENED ETCHING COATING LIQUID, AND METHOD FOR SELECTIVELY ETCHING SUNLIGHT POWER GENERATION ELEMENT SUBSTRATE FOR SOLAR CELL USING THE THICKENED ETCHING COATING LIQUID 审中-公开
标题翻译：厚ÄTZBESCHICHTUNGSFLÜSSIGKEIT和方法用于太阳能电池阳光发电元件衬底进行选择性蚀刻中增厚ÄTZBESCHICHTUNGSFLÜSSIGKEIT
公开(公告)号：EP2224471A1
公开(公告)日：2010-09-01
申请号：EP07859875.2
申请日：2007-12-20
申请人： Teoss CO., LTD.
发明人： MURAI, Tsuyoshi , KONAKA, Toshinori
IPC分类号： H01L21/308 , H01L31/04
CPC分类号： H01L31/1804 , C09K13/02 , H01L31/02008 , H01L31/022425 , H01L31/0504 , Y02E10/547 , Y02P70/521
摘要： A HIGH VISCOSITY ETCHANT AND A SELECTIVE ETCHING METHOD FOR PHOTOVOLTAIC ELEMENT SUBSTRATES OF SOLAR CELLS USING THE SAME
A main subject of the present invention is to provide a high viscosity etchant EL and a selective etching method using the same which etches a photovoltaic element substrate to a set depth concretely and does not spread undesirably.
The high viscosity etchant EL of the present invention comprises an etchant being an alkaline solution for etching a photovoltaic element substrate 12; a viscosity increasing additive derived from a plant for increasing a viscosity of the etchant EL. The selective etching method comprises applying the high viscosity etchant EL to a surface of the photovoltaic element substrate 12; reacting the high viscosity etchant EL and the photovoltaic element substrate 12 by heating them; washing the photovoltaic element substrate 12 with pure water.
摘要翻译：高粘度蚀刻剂及选择性蚀刻METHOD FOR PHOTOVOLTAIC元件基板使用本发明的该方法的主要被摄体太阳电池是使用其蚀刻的光电元件的衬底的相同，以提供高粘度腐蚀剂EL和选择性蚀刻方法设置深度具体，不会不希望传播。本发明的高粘度的蚀刻剂包括EL是用于蚀刻的光电元件12的碱性溶液蚀刻剂的基板; 来源于植物用于增加蚀刻剂EL的粘度的粘度增加的添加剂。选择性蚀刻方法包括将高粘度蚀刻剂EL到光伏元件基片12的表面上; 反应的高粘度腐蚀剂EL和通过加热它们的光电元件的基板12; 洗涤该光生伏打元件基板12与纯净水。

10. 发明公开

EP2184574A1 SILICON HEATING FURNACE 有权
标题翻译：硅加热炉
公开(公告)号：EP2184574A1
公开(公告)日：2010-05-12
申请号：EP07792038.7
申请日：2007-08-06
申请人： Teoss CO., LTD.
发明人： MURAI, Tsuyoshi , KONAKA, Toshinori
IPC分类号： F27B17/00 , B02C19/00
CPC分类号： F27B17/0016 , C01B33/00 , C30B29/06 , C30B35/00 , F27D99/0006 , H01L21/67109 , Y02P20/124
摘要： The silicon heating furnace (10) is constructed by combining two semi-cylindrical furnaces (26a),(26b). Each of the semi-cylindrical furnaces (26a), (26b) has a semi-cylindrical housing (34), an insulator (36), heaters (38), and an isothermal material (42). Radial direction separation preventing members (44) are arranged in inner side of both ends of circumferential direction of the housing (34) to prevent a separation of the insulator (36) to radial direction. End face of circumferential direction covers (46) are fixed on the radial direction separation preventing members (44) to cover the end faces of circumferential direction (36a) of the insulator (36). Cooling pipes for end faces of circumferential direction (48) through which cooling water passed are arranged between the end faces of circumferential direction (36a) of the insulator (36) and the end face of circumferential direction covers (46).
摘要翻译：硅加热炉（10）由两个半圆柱形炉（26a），（26b）组合而成。每个半圆柱形炉26a，26b具有半圆柱形壳体34，绝缘体36，加热器38和等温材料42。防止径向分离构件44配置在壳体34的周向两端的内侧，以防止绝缘体36向径向的分离。周向盖体46的端面固定在径向防脱部件44上，以覆盖绝缘体36的圆周方向端面36a。冷却水通过的圆周方向端面（48）的冷却管配置在绝缘体（36）的圆周方向（36a）的端面与圆周方向罩（46）的端面之间。

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