基本信息:
- 专利标题： METHOD FOR FORMING MONOCRYSTALLINE DIAMOND FILM
- 申请号：EP22901011.1 申请日：2022-10-31
- 公开(公告)号：EP4442867A1 公开(公告)日：2024-10-09
- 发明人： QU Weifeng , IGAWA Shizuo , SUNAKAWA Ken
- 申请人： Shin-Etsu Handotai Co., Ltd.
- 申请人地址： JP Tokyo 100-0004 2-1, Ohtemachi 2-chome Chiyoda-ku
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JP Tokyo 100-0004 2-1, Ohtemachi 2-chome Chiyoda-ku
- 代理机构： Mooser, Sebastian Thomas
- 优先权： JP 21196363 2021.12.02
- 国际申请： JP2022040822 2022.10.31
- 国际公布： WO2023100578 2023.06.08
- 主分类号： C30B29/04
- IPC分类号： C30B29/04 ; C23C16/27 ; C23C16/511 ; C30B25/02 ; C30B25/18 ; H01L21/20
摘要：
The present invention is a method for forming a monocrystalline diamond film on a monocrystalline silicon substrate. The method includes a first step of preparing a monocrystalline silicon substrate having a plane orientation of (100) or (111), a second step of performing an RTA treatment on the prepared monocrystalline silicon substrate in a carbon-containing atmosphere to form a 3C-SiC monocrystalline film on the surface of the monocrystalline silicon substrate, a third step of converting the 3C-SiC monocrystalline film into diamond nuclei by using a microwave plasma CVD method, in which a bias voltage is applied in a carbon-containing atmosphere, to form the diamond nuclei on the monocrystalline silicon substrate, and a fourth step of causing a monocrystalline diamond film to grow on the monocrystalline silicon substrate by using the microwave plasma CVD method in a carbon-containing atmosphere. By the above method, high density diamond nuclei are formed, and a method for forming a large area monocrystalline diamond film that exhibits excellent crystal orientation and has no grain boundary in the film is provided.