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1. 发明授权

EP2870604B1 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 失效
公开(公告)号：EP2870604B1
公开(公告)日：2018-11-14
申请号：EP13813880.5
申请日：2013-07-01
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T.
IPC分类号： G11C11/22 , G11C14/00 , G11C5/14 , G11C7/24 , G11C8/20 , G11C16/22 , G11C7/20 , G11C7/10 , G11C19/00 , H01L27/11502 , H03K3/356
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.

2. 发明公开

EP0946989A1 FERROELECTRIC BASED MEMORY DEVICES UTILIZING LOW CURIE POINT FERROELECTRICS AND ENCAPSULATION 失效
标题翻译：铁电体存储设备以使用铁电居里温度低及其封装
公开(公告)号：EP0946989A1
公开(公告)日：1999-10-06
申请号：EP97936225.0
申请日：1997-07-25
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, T., Jr.
IPC分类号： H01L21 , H01L27 , H01L29
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L29/516
摘要： A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell (200) is designed to store the information at a temperature less than a first temperature. The memory cell (200) includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 degrees C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). One of the contacts typically includes a platinum electrode (210). The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

3. 发明公开

EP0528961A1 LIGHT ACTUATED OPTICAL SWITCHING DEVICE 失效
标题翻译：光激发光开关器件。
公开(公告)号：EP0528961A1
公开(公告)日：1993-03-03
申请号：EP91910220.0
申请日：1991-05-06
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, Tate, Jr. , BULLINGTON, Jeff, Allen
IPC分类号： G02F1 , G02B6
CPC分类号： G02B6/3522 , G02B6/355 , G02B6/3596 , G02F1/0126 , G02F1/293 , G02F1/3137
摘要： Dispositif de commutation photo-activé (10) dans lequel la réception d'un signal de lumière sert à commuter un faisceau de lumière entre deux points de sortie (14) et (16). Le faisceau de lumière d'entrée est réfléchi par une interface située entre deux régions d'indices de réfraction différents, lorsque le signal de lumière est présent. Ensuite, le faisceau de lumière réfléchi sort par le premier point de sortie (16). En l'absence du signal de lumière, les deux régions ont le même indice de réfraction, et le faisceau de lumière passe par les deux régions et il sort par le second point de sortie (14).

4. 发明公开

EP3482397A1 ANALOG FERROELECTRIC MEMORY WITH IMPROVED TEMPERATURE RANGE 有权
公开(公告)号：EP3482397A1
公开(公告)日：2019-05-15
申请号：EP17847321.1
申请日：2017-08-28
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T., Jr. , WARD, Calvin, B.
IPC分类号： G11C11/22 , G11C11/16 , G11C11/4096 , G11C11/419 , G11C11/56

5. 发明公开

EP3097643A1 NON-VOLATILE COUNTER UTILIZING A FERROELECTRIC CAPACITOR 失效
标题翻译：与铁电电容器不挥发COUNTER
公开(公告)号：EP3097643A1
公开(公告)日：2016-11-30
申请号：EP15740718.0
申请日：2015-01-21
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T.
IPC分类号： H03K21/08
CPC分类号： H03K21/08 , G11C11/221 , H03K23/766
摘要： A counter that can include a plurality of count stages is disclosed. Each count stage includes a ferroelectric capacitor characterized by first and second polarization states, a variable impedance element, reset and count ports and a detector. The variable impedance element has an impedance between first and second switch terminals that is determined by a signal on a control terminal, the ferroelectric capacitor being connected between the control terminal and the first switch terminal. A reset signal coupled to the control terminal causes the ferroelectric capacitor to be polarized in the first polarization state. The count port is configured to receive pulses to be counted, the count port being connected to the first switch terminal by a conductive load. The detector generates a count complete signal if a potential on the first terminal exceeds a threshold value while the count port is receiving one of the pulses.

6. 发明公开

EP2647009A4 ANALOG MEMORIES UTILIZING FERROELECTRIC CAPACITORS 失效
标题翻译： ANALOGSPEICHER MIT FERROELEKTRISCHEN KONDENSATOREN
公开(公告)号：EP2647009A4
公开(公告)日：2016-05-11
申请号：EP11844741
申请日：2011-11-17
申请人： RADIANT TECHNOLOGIES INC
发明人： EVANS JOSEPH T , WARD CALVIN B
IPC分类号： G11C11/22 , G11C11/56 , G11C27/00
CPC分类号： G11C11/221 , G11C11/2259 , G11C11/2273 , G11C11/2275 , G11C11/2293 , G11C11/5657 , G11C27/005
摘要： A ferroelectric memory having a plurality of ferroelectric memory cells, each ferroelectric memory cell including a ferroelectric capacitor is disclosed. The ferroelectric memory includes read and write lines and a plurality of ferroelectric memory cell select buses, one select bus corresponding to each of the ferroelectric memory cells. Each of the ferroelectric memory cells includes first and second gates for connecting the ferroelectric memory cell to the read line and the write line, respectively, in response to signals on the ferroelectric memory cell select bus corresponding to that ferroelectric memory cell. A write circuit causes a charge to be stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the write line, the charge having a value determined by a data value having at least three states. A read circuit measures the charge stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the read line to generate an output value, the output value corresponding to one of the states.
摘要翻译：公开了具有多个强电介质存储单元的铁电存储器，每个强电介质存储单元包括铁电电容器。铁电存储器包括读取和写入线和多个铁电存储器单元选择总线，每个铁电存储单元相应的一个选择总线。每个铁电存储单元包括用于分别响应于与该铁电存储单元相对应的铁电存储单元选择总线上的信号而将铁电存储单元连接到读取线和写入线的第一和第二栅极。写入电路使得电荷存储在当前连接到写入线的强电介质存储单元的铁电电容器中，电荷具有由具有至少三个状态的数据值确定的值。读取电路测量存储在当前连接到读取线的铁电存储器单元的铁电电容器中的电荷，以产生与其中一个状态对应的输出值。

7. 发明公开

EP2647009A2 ANALOG MEMORIES UTILIZING FERROELECTRIC CAPACITORS 失效
标题翻译：铁电电容器的模拟存储器
公开(公告)号：EP2647009A2
公开(公告)日：2013-10-09
申请号：EP11844741.6
申请日：2011-11-17
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T. , WARD, Calvin, B.
IPC分类号： G11C11/22
CPC分类号： G11C11/221 , G11C11/2259 , G11C11/2273 , G11C11/2275 , G11C11/2293 , G11C11/5657 , G11C27/005
摘要： A ferroelectric memory having a plurality of ferroelectric memory cells, each ferroelectric memory cell including a ferroelectric capacitor is disclosed. The ferroelectric memory includes read and write lines and a plurality of ferroelectric memory cell select buses, one select bus corresponding to each of the ferroelectric memory cells. Each of the ferroelectric memory cells includes first and second gates for connecting the ferroelectric memory cell to the read line and the write line, respectively, in response to signals on the ferroelectric memory cell select bus corresponding to that ferroelectric memory cell. A write circuit causes a charge to be stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the write line, the charge having a value determined by a data value having at least three states. A read circuit measures the charge stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the read line to generate an output value, the output value corresponding to one of the states.

8. 发明公开

EP1999867A1 MOBILE COMMUNICATION TERMINAL CAPABLE OF POSITION DETERMINATION AND METHOD OF DETERMINING POSITION IN THE MOBILE COMMUNICATION TERMINAL 审中-公开
标题翻译：有能力移动通信设备的用于确定位置和方法用于确定位置的移动通信设备
公开(公告)号：EP1999867A1
公开(公告)日：2008-12-10
申请号：EP06768985.1
申请日：2006-06-22
申请人： Radiant Technologies, Inc.
发明人： KIM, Tae Il , HA, Tae Joon , KIM, Eun Young , SOHN, Hyuk Jin
IPC分类号： H04B7/26
CPC分类号： H04W64/00
摘要： A mobile communication terminal capable of position determination, including: a base station information recorder recording detailed base station information corresponding to at least one base station; a base station signal receiver receiving base station signal information from a reference base station at a predetermined interval; a base station information reader reading the detailed base station information with respect to a base station corresponding to the received base station signal information, from the base station information recorder; and a position determiner determining a position of the mobile communication terminal by using the received base station signal information and the read detailed base station information.

9. 发明公开

EP2870604A4 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 失效
标题翻译：嵌入式非易失性存储器电路，用于逻辑函数在电力INTERRUPTED阶段的实施
公开(公告)号：EP2870604A4
公开(公告)日：2015-07-01
申请号：EP13813880
申请日：2013-07-01
申请人： RADIANT TECHNOLOGIES INC
发明人： EVANS JOSEPH T
IPC分类号： G11C5/14 , G11C7/10 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/22 , G11C14/00 , G11C16/22 , G11C16/30 , G11C19/00 , H01L27/115 , H03K3/356
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.

10. 发明公开

EP2870604A1 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 失效
标题翻译：嵌入式非易失性存储器电路在整个断电周期内实现逻辑功能
公开(公告)号：EP2870604A1
公开(公告)日：2015-05-13
申请号：EP13813880.5
申请日：2013-07-01
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T.
IPC分类号： G11C5/14 , G11C16/30
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.
摘要翻译：公开了一种具有自主铁电存储器锁存器（AML）的电路。以AML输入，AML输出，第一AML电源触点，第二AML电源触点和AML状态为特征的AML以及与AML输入或AML输出之一串联的第一开关。当在第一和第二AML电力触点之间提供电力时，开关被定位成防止AML的状态改变。在本发明的一个方面中，电路可以包括与AML输入中的另一个串联的第二开关或 AML输出和一个与AML输入或AML输出串联的锁存器。锁定器的位置使得AML输出和AML输入之间不存在直接回路。

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