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1. 发明授权

EP2870604B1 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 有权
公开(公告)号：EP2870604B1
公开(公告)日：2018-11-14
申请号：EP13813880.5
申请日：2013-07-01
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T.
IPC分类号： G11C11/22 , G11C14/00 , G11C5/14 , G11C7/24 , G11C8/20 , G11C16/22 , G11C7/20 , G11C7/10 , G11C19/00 , H01L27/11502 , H03K3/356
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.

2. 发明公开

EP0946989A1 FERROELECTRIC BASED MEMORY DEVICES UTILIZING LOW CURIE POINT FERROELECTRICS AND ENCAPSULATION 失效
标题翻译：铁电体存储设备以使用铁电居里温度低及其封装
公开(公告)号：EP0946989A1
公开(公告)日：1999-10-06
申请号：EP97936225.0
申请日：1997-07-25
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, T., Jr.
IPC分类号： H01L21 , H01L27 , H01L29
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L29/516
摘要： A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell (200) is designed to store the information at a temperature less than a first temperature. The memory cell (200) includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 degrees C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). One of the contacts typically includes a platinum electrode (210). The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

3. 发明公开

EP0528961A1 LIGHT ACTUATED OPTICAL SWITCHING DEVICE 失效
标题翻译：光激发光开关器件。
公开(公告)号：EP0528961A1
公开(公告)日：1993-03-03
申请号：EP91910220.0
申请日：1991-05-06
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, Tate, Jr. , BULLINGTON, Jeff, Allen
IPC分类号： G02F1 , G02B6
CPC分类号： G02B6/3522 , G02B6/355 , G02B6/3596 , G02F1/0126 , G02F1/293 , G02F1/3137
摘要： Dispositif de commutation photo-activé (10) dans lequel la réception d'un signal de lumière sert à commuter un faisceau de lumière entre deux points de sortie (14) et (16). Le faisceau de lumière d'entrée est réfléchi par une interface située entre deux régions d'indices de réfraction différents, lorsque le signal de lumière est présent. Ensuite, le faisceau de lumière réfléchi sort par le premier point de sortie (16). En l'absence du signal de lumière, les deux régions ont le même indice de réfraction, et le faisceau de lumière passe par les deux régions et il sort par le second point de sortie (14).

4. 发明公开

EP1915828A1 METHOD AND SYSTEM FOR DETERMINING POSITION OF MOBILE COMMUNICATION DEVICE USING RATIO METRIC 审中-公开
标题翻译：方法和系统确定移动通信设备的位置使用比例梅特赖克
公开(公告)号：EP1915828A1
公开(公告)日：2008-04-30
申请号：EP06768911.7
申请日：2006-06-16
申请人： Radiant Technologies, Inc.
发明人： KIM, Tae Il , LEE, Hee Man , HA, Tae Joon , KWON, Tae Kyoung , LEE, Jeong Keun
IPC分类号： H04B7/26
CPC分类号： H04W64/00 , G01S5/0205 , G01S5/14
摘要： A method of determining a location of a mobile communication terminal, the method including: receiving base station identification signals from a plurality of base stations; calculating distance ratios between the plurality of base stations and the mobile communication terminal, from the received base station identification signals; generating first variables and second variables from the distance ratios; and determining the location of the mobile communication terminal from the first variables and the second variables is provided.

5. 发明授权

EP0815596B1 IMPROVED NON-DESTRUCTIVELY READ FERROELECTRIC MEMORY CELL 失效
标题翻译：改进的，破坏性的可读铁电存储器单元
公开(公告)号：EP0815596B1
公开(公告)日：2001-08-22
申请号：EP96908703.0
申请日：1996-03-09
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, Tate, Jr. , WARREN, William, L. , TUTTLE, Bruce, A.
IPC分类号： H01L29/78 , H01L29/51
CPC分类号： H01L29/516 , G11C11/223
摘要： An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.

6. 发明公开

EP0815590A4 METHOD FOR MAKING IMPROVED LSCO STACK ELECTRODE 失效
标题翻译：方法改进LSCO桩LEAD
公开(公告)号：EP0815590A4
公开(公告)日：1999-08-25
申请号：EP96908739
申请日：1996-03-08
申请人： RADIANT TECHNOLOGIES INC
发明人： EVANS JOSEPH TATE JR , BOYER LENARD
IPC分类号： H01L21/28 , H01L21/02 , H01L21/822 , H01L27/04 , H01L21/44
CPC分类号： H01L28/60 , H01L28/55 , Y10S148/014 , Y10S148/10
摘要： A method for making an improved LSCO stack in the generation of small platinum features (46) on the surface of a substrate (32) by sputtering of the LSCO material (54) and utilizing a photoresist mask to pattern the LSCO (54) in accordance with the platinum features (46). The problems and expense associated with high-temperature deposition of LSCO on platinum and the etching thereof are overcome by sputtering the LSCO at room temperature.

7. 发明公开

EP0815596A4 IMPROVED NON-DESTRUCTIVELY READ FERROELECTRIC MEMORY CELL 失效
标题翻译： VERBESSERTE，ZERSTÖRUNGSFREILESBARE FERROELEKTRISCHE SPEICHERZELLE
公开(公告)号：EP0815596A4
公开(公告)日：1998-06-03
申请号：EP96908703
申请日：1996-03-09
申请人： RADIANT TECHNOLOGIES INC
发明人： EVANS JOSEPH TATE JR , WARREN WILLIAM L , TUTTLE BRUCE A
IPC分类号： H01L21/8247 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/51 , H01L29/788 , H01L29/792 , H01L29/78
CPC分类号： H01L29/516 , G11C11/223
摘要： An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.
摘要翻译：改进的铁电FET结构，其中掺杂铁电层以减少保留损耗。根据本发明的铁电FET包括其上具有第一和第二触点的半导体层，第一和第二触点彼此分离。铁电FET还包括夹在半导体层和底部电极之间的底部电极和铁电体层。铁电层由化学组成ABO 3的钙钛矿结构构成，其中B位置包含第一和第二元素以及具有足够浓度的大于+4的氧化态的掺杂剂元素，以阻止在第一和第二元素之间测量的电阻的偏移第二次接触时间。铁电FET结构优选在A位置包含Pb。第一和第二元素分别优选为Zr和Ti。优选的B位掺杂剂是浓度在1％和8％之间的铌，钽和钨。

8. 发明公开

EP0815590A1 METHOD FOR MAKING IMPROVED LSCO STACK ELECTRODE 失效
标题翻译：方法改进LSCO桩LEAD
公开(公告)号：EP0815590A1
公开(公告)日：1998-01-07
申请号：EP96908739.0
申请日：1996-03-08
申请人： RADIANT TECHNOLOGIES, INC.
发明人： EVANS, Joseph, Tate, Jr. , BOYER, Lenard
IPC分类号： H01L21 , H01L27
CPC分类号： H01L28/60 , H01L28/55 , Y10S148/014 , Y10S148/10
摘要： A method for making an improved LSCO stack in the generation of small platinum features (46) on the surface of a substrate (32) by sputtering of the LSCO material (54) and utilizing a photoresist mask to pattern the LSCO (54) in accordance with the platinum features (46). The problems and expense associated with high-temperature deposition of LSCO on platinum and the etching thereof are overcome by sputtering the LSCO at room temperature.

9. 发明公开

EP2870604A4 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 有权
标题翻译：嵌入式非易失性存储器电路，用于逻辑函数在电力INTERRUPTED阶段的实施
公开(公告)号：EP2870604A4
公开(公告)日：2015-07-01
申请号：EP13813880
申请日：2013-07-01
申请人： RADIANT TECHNOLOGIES INC
发明人： EVANS JOSEPH T
IPC分类号： G11C5/14 , G11C7/10 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/22 , G11C14/00 , G11C16/22 , G11C16/30 , G11C19/00 , H01L27/115 , H03K3/356
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.

10. 发明公开

EP2870604A1 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION 有权
标题翻译：嵌入式非易失性存储器电路在整个断电周期内实现逻辑功能
公开(公告)号：EP2870604A1
公开(公告)日：2015-05-13
申请号：EP13813880.5
申请日：2013-07-01
申请人： Radiant Technologies, Inc.
发明人： EVANS, Joseph, T.
IPC分类号： G11C5/14 , G11C16/30
CPC分类号： G11C5/148 , G11C7/1006 , G11C7/20 , G11C7/24 , G11C8/20 , G11C11/221 , G11C14/00 , G11C16/22 , G11C19/005 , H01L27/11502 , H03K3/356008
摘要： A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.
摘要翻译：公开了一种具有自主铁电存储器锁存器（AML）的电路。以AML输入，AML输出，第一AML电源触点，第二AML电源触点和AML状态为特征的AML以及与AML输入或AML输出之一串联的第一开关。当在第一和第二AML电力触点之间提供电力时，开关被定位成防止AML的状态改变。在本发明的一个方面中，电路可以包括与AML输入中的另一个串联的第二开关或 AML输出和一个与AML输入或AML输出串联的锁存器。锁定器的位置使得AML输出和AML输入之间不存在直接回路。

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