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1. 发明公开

EP1209746A3 A semiconductor component for transient voltage limiting 失效
标题翻译：限制瞬态电压半导体组件
公开(公告)号：EP1209746A3
公开(公告)日：2004-09-29
申请号：EP02002940.1
申请日：1992-06-11
申请人： POWER INNOVATIONS LIMITED
发明人： Byatt, Stephen Wilton , Maytum, Michael John
IPC分类号： H01L27/08 , H01L29/74 , H01L29/87
CPC分类号： H01L29/747 , H01L27/0814 , H01L27/0817 , H01L29/7416 , H01L29/87
摘要： A semiconductor component (4) is provided which is suitable for limiting transient voltages on the supply lines of a system having at least three supply lines, one of the supply lines (252) being a current sink. The semiconductor component comprises at least three input means (251,252,253) for connection to respective ones of the supply lines, and a respective multi-junction diode (200,210,220) for each input means (251,252,253) having a threshold voltage at which it changes from a high-impedance state to a low-impedance state. Each multi-junction diode (200,210,220) is connected in the same sense between a respective one of said input means (251,252,253) and a common terminal (250), and is paired with a respective further diode connected in shunt with it and in the opposite sense to it. One pair (210) of the diodes, being said pair connected to said current sink, has current capacities substantially equal to the combined current capacities of the other pairs of diodes (200,220) and each of the diodes is a diode having a single PN junction. A doped region (202,212,222) of the semiconductor body is common to all the diode pairs.

2. 发明公开

EP1209746A2 A semiconductor component for transient voltage limiting 失效
标题翻译： Halbleiterbauelement zum Begrenzen von transienten Spannungen
公开(公告)号：EP1209746A2
公开(公告)日：2002-05-29
申请号：EP02002940.1
申请日：1992-06-11
申请人： POWER INNOVATIONS LIMITED
发明人： The designation of the inventor has not yet been filed
IPC分类号： H01L27/08 , H01L29/74 , H01L29/87
CPC分类号： H01L29/747 , H01L27/0814 , H01L27/0817 , H01L29/7416 , H01L29/87
摘要： A semiconductor component (4) is provided which is suitable for limiting transient voltages on the supply lines of a system having at least three supply lines, one of the supply lines (252) being a current sink. The semiconductor component comprises at least three input means (251,252,253) for connection to respective ones of the supply lines, and a respective multi-junction diode (200,210,220) for each input means (251,252,253) having a threshold voltage at which it changes from a high-impedance state to a low-impedance state. Each multi-junction diode (200,210,220) is connected in the same sense between a respective one of said input means (251,252,253) and a common terminal (250), and is paired with a respective further diode connected in shunt with it and in the opposite sense to it. One pair (210) of the diodes, being said pair connected to said current sink, has current capacities substantially equal to the combined current capacities of the other pairs of diodes (200,220) and each of the diodes is a diode having a single PN junction. A doped region (202,212,222) of the semiconductor body is common to all the diode pairs.
摘要翻译：提供了一种半导体组件（4），其适于限制具有至少三条电源线的系统的电源线上的瞬态电压，其中一条电源线（252）是电流吸收器。半导体部件包括至少三个用于连接到相应供电线的输入装置（251,252,253），以及用于每个输入装置（251,252,253）的相应的多结二极管（200,210,220），其具有阈值电压，在该阈值电压处，阻抗状态变为低阻态。每个多结二极管（200,210,220）以相同的意义被连接在所述输入装置（251,252,253）中的相应一个和公共端子（250）之间，并且与连接成分流的相应的另外的二极管配对，并且在相反的感觉到它所述二极管的一对（210），连接到所述电流吸收器的所述对具有基本上等于其他二极管对（200,220）的组合电流容量的电流容量，并且每个二极管是具有单个PN结的二极管。半导体主体的掺杂区域（202,212,222）对于所有二极管对都是共同的。

3. 发明公开

EP1020924A2 A semiconductor component for transient voltage limiting 失效
标题翻译：用于瞬态电压限制的半导体元件
公开(公告)号：EP1020924A2
公开(公告)日：2000-07-19
申请号：EP00103702.7
申请日：1992-06-11
申请人： POWER INNOVATIONS LIMITED
发明人： The designation of the inventor has not yet been filed
IPC分类号： H01L29/74 , H01L29/87
CPC分类号： H01L29/747 , H01L27/0814 , H01L27/0817 , H01L29/7416 , H01L29/87
摘要： A semiconductor component for limiting transient voltages on the signal or other supply lines of a system, includes, in a common semiconductor body, a plurality of multi-junction diodes connected in the same sense between a common terminal and respective input means which are for connection to the respective supply lines of the system, and a respective further diode connected in shunt with each multi-junction diode with the opposite sense to the multi-junction diode.
摘要翻译：用于限制系统的信号或其他供电线路上的瞬态电压的半导体组件包括在公共半导体主体中的多个多结二极管，所述多结二极管以相同方式连接在用于连接的公共端子和相应输入装置之间到系统的相应电源线，以及相应的另一个二极管与每个多结二极管并联连接，与多结二极管相反。

4. 发明授权

EP0544397B1 A PNPN semiconductor device 失效
标题翻译： PNPN-Halbleiterbauteil
公开(公告)号：EP0544397B1
公开(公告)日：1998-11-18
申请号：EP92308901.5
申请日：1992-09-30
申请人： POWER INNOVATIONS LIMITED
发明人： Byatt, Stephen Wilton
IPC分类号： H01L29/86 , H01L29/10 , H01L29/08 , H01L29/74
CPC分类号： H01L29/102 , H01L29/87

5. 发明授权

EP0657743B1 Testing of semiconductor devices 失效
标题翻译：半导体器件测试
公开(公告)号：EP0657743B1
公开(公告)日：2002-06-05
申请号：EP94309274.2
申请日：1994-12-12
申请人： POWER INNOVATIONS LIMITED
发明人： Maytum, Michael J.
IPC分类号： G01R31/26 , G01R31/28
CPC分类号： G01R31/1236 , G01R31/2633

6. 发明授权

EP0589963B1 A SEMICONDUCTOR COMPONENT FOR TRANSIENT VOLTAGE LIMITING 失效
标题翻译：半导体部件暂态电压的控制
公开(公告)号：EP0589963B1
公开(公告)日：2001-09-12
申请号：EP92912070.7
申请日：1992-06-11
申请人： POWER INNOVATIONS LIMITED
发明人： BYATT, Stephen, Wilton 8 Manor Close Bromham , MAYTUM, Michael, John
IPC分类号： H01L29/74 , H01L29/86
CPC分类号： H01L29/747 , H01L27/0814 , H01L27/0817 , H01L29/7416 , H01L29/87

7. 发明公开

EP1344377A2 OVERVOLTAGE PROTECTION CIRCUIT 审中-公开
标题翻译：浪涌保护电路
公开(公告)号：EP1344377A2
公开(公告)日：2003-09-17
申请号：EP01271681.7
申请日：2001-12-19
申请人： POWER INNOVATIONS LIMITED
发明人： MAYTUM, Michael, John , BYATT, Steven, Wilton
IPC分类号： H04M3/18
CPC分类号： H04M3/18
摘要： An overvoltage protection circuit for preventing voltage and current overload on a telephone line conductor (11, 13) to prevent damage to a SLIC (22) has a first SCR (47) for connecting the conductor to a reference potential (42) and a first trigger means (D1, TR5, R1) operable to switch the SCR from a first, OFF state to a second, ON state. The trigger means (D1, TR5, R1) is voltage-triggered by voltages exceeding a first magnitude on said conductor and current-triggered by voltages exceeding a second magnitude on said conductor, thereby to provide overvoltage protection at two discrete voltage magnitudes.

8. 发明授权

EP0774167B1 A POWER SEMICONDUCTOR DEVICE 失效
标题翻译：功率半导体装置
公开(公告)号：EP0774167B1
公开(公告)日：2001-12-05
申请号：EP95927852.4
申请日：1995-08-04
申请人： POWER INNOVATIONS LIMITED
发明人： GARNHAM, David, Arthur , RUTGERS, Koenraad, Teunis, Francis
IPC分类号： H01L29/32 , H01L29/73 , H01L29/74
CPC分类号： H01L29/66295 , H01L21/221 , H01L29/1004 , H01L29/102 , H01L29/32
摘要： A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has a gold ion implant (14) in a region of the device between two of or the two p-n junctions, which region is the base (2) in the case of a bipolar transistor, located away from the current carrying active region of the device. The device has a low resistance and may be turned off rapidly because the implanted gold provides recombination centres which act as a sink for carriers drawing them from the active region.

9. 发明授权

EP0550198B1 A semiconductor integrated circuit comprising a protective device 失效
标题翻译：有保护装置的半导体集成电路
公开(公告)号：EP0550198B1
公开(公告)日：2000-05-24
申请号：EP92311410.2
申请日：1992-12-14
申请人： POWER INNOVATIONS LIMITED
发明人： Byatt, Stephen Wilton
IPC分类号： H01L27/02
CPC分类号： H01L29/7416 , H01L27/0248 , H01L29/7404

10. 发明公开

EP1224794A1 OVERVOLTAGE PROTECTION CIRCUITRY 审中-公开
标题翻译：浪涌保护电路
公开(公告)号：EP1224794A1
公开(公告)日：2002-07-24
申请号：EP99950987.0
申请日：1999-10-26
申请人： POWER INNOVATIONS LIMITED
发明人： MAYTUM, Michael John , BYATT, Steven Wilton
IPC分类号： H04M3/18 , H02H9/04
CPC分类号： H02H9/041 , H04M3/18 , H04M2201/06
摘要： An overvoltage protector suitable for protecting conductors comprises first, second and third at least bipolar protection elements (132, 134, 136). A first electrode of each protection element is connected to a common node (138). A second electrode of the first protection element (132) and a second electrode of the second or third protection elements (134, 136) are suitable for connection to a conductor to be protected. The first and third elements (132, 136) have breakdown conduction characteristic in one direction and diode conduction characteristic in the other, and the second element (134) has breakdown conduction characteristic in both directions, wherein the respective first electrodes of the first and third elements (132, 136) are of the same polarity.

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