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    • 7. 发明公开
    • Apparatus and method for dicing semiconductor wafers
    • Vorrichtung und Verfahren zum Zerteilen von Halbleiterscheiben
    • EP1255280A2
    • 2002-11-06
    • EP02003300.7
    • 2002-02-25
    • KULICKE & SOFFA INVESTMENTS, INC
    • Manor, Ran
    • H01L21/00
    • H01L21/78B23K26/0093B23K26/364B23K26/40B23K2201/40B23K2203/50B28D1/221B28D5/0011B28D5/022B28D5/029B28D5/04H01L21/67092H01S5/0201
    • A method and apparatus for singulating semiconductor wafers is described. The method comprises the steps of aiming a laser beam at a layer placed over the substrate; absorbing energy from the laser beam into the layer; forming scribe lines in the layer by scanning the laser beam across the layer; and cutting through the substrate along the scribe lines with a saw blade to singulate the wafer. The apparatus includes a laser placed over the coating layer of the substrate, and a saw blade mounted over a surface of the substrate. The coating layer has a first absorption coefficient relative to a wavelength of the laser and the semiconductor substrate has a second absorption coefficient less than the first absorption coefficient. Energy from the laser beam is absorbed into the coating layer to form scribe lines therein, and the saw blade cuts through the substrate along the scribe lines.
    • 描述了用于分离半导体晶片的方法和装置。 该方法包括以下步骤:将激光束瞄准位于衬底上的层; 从激光束吸收能量到层中; 通过扫描穿过该层的激光束在该层中形成划线; 并用锯片沿划线切割基片,以切割晶片。 该设备包括放置在基板的涂层上的激光器和安装在基板的表面上的锯片。 涂层相对于激光的波长具有第一吸收系数,并且半导体衬底具有小于第一吸收系数的第二吸收系数。 来自激光束的能量被吸收到涂层中以在其中形成划线,并且锯条沿着划线切穿基板。