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    • 5. 发明公开
    • METHOD FOR TRANSFERRING GRAPHENE
    • VERFAHREN ZURÜBERTRAGUNGVON GRAPHEN
    • EP3135631A1
    • 2017-03-01
    • EP15382430.5
    • 2015-08-24
    • Graphenea, S.A.
    • ZURUTUZA ELORZA, AmaiaCENTENO PÉREZ, Alba
    • B81C1/00
    • B81C1/00158B81C2201/0133B81C2201/0176B81C2201/0191B81C2201/053C01B32/194
    • A method of transferring graphene onto a target substrate having cavities and/or holes or onto a substrate having at least one water soluble layer is disclosed. It comprises the steps of: applying a protective layer (4) onto a sample comprising a stack (20) formed by a graphene monolayer (2) grown on a metal foil or on a metal thin film on a silicon substrate (1); attaching to said protective layer (4) a frame (5) comprising at least one outer border and at least one inner border, said frame (5) comprising a substrate and a thermal release adhesive polymer layer, the frame (5) providing integrity and allowing the handling of said sample; removing or detaching said metal foil or metal thin film on a silicon substrate (1); once the metal foil or metal thin film on a silicon substrate (1) has been removed or detached, drying the sample; depositing the sample onto a substrate (7); removing said frame (5) by cutting through said protective layer (4) at said at least one inner border of the frame (5) or by thermal release.
    • 公开了一种将石墨烯转移到具有空穴和/或孔的目标基底上或具有至少一个水溶性层的基底上的方法。 其包括以下步骤:将保护层(4)施加到包含由在金属箔上生长的石墨烯单层(2)或在硅衬底(1)上的金属薄膜上形成的堆叠(20)的样品上; 附接到所述保护层(4)的框架(5)包括至少一个外边界和至少一个内边界,所述框架(5)包括基底和热释放粘合剂聚合物层,所述框架(5)提供完整性和 允许处理所述样品; 在硅衬底(1)上移除或分离所述金属箔或金属薄膜; 一旦硅衬底(1)上的金属箔或金属薄膜已经被去除或分离,干燥样品; 将样品沉积到衬底(7)上; 通过在框架(5)的所述至少一个内边界处切割所述保护层(4)或通过热释放来移除所述框架(5)。
    • 10. 发明公开
    • Method of manufacturing a graphene monolayer on insulating substrates
    • Verfahren zur Herstellung einer Grapheneinzelschicht auf Isolationssubstraten
    • EP2679540A1
    • 2014-01-01
    • EP12174322.3
    • 2012-06-29
    • Graphenea, S.A.
    • Zurutuza Elorza, AmaiaCenteno Perez, AlbaAlonso Rodriguez, BeatrizPesquera Rodriguez,, Amaia
    • C01B31/04
    • C01B31/0484B82Y30/00B82Y40/00C01B32/186C01B32/194C01B2204/02Y10T428/31786
    • A method of manufacturing a graphene monolayer on insulating substrates from CVD graphene synthesis, wherein a metal foil (3) catalyst with a top graphene layer (1) and a bottom graphene layer (2) is obtained, by comprising the steps of:
      - Applying an adhesive tape (4) to the bottom graphene layer (2) deposited at the bottom of the metal foil (3) in the CVD graphene synthesis by a roller,
      - detaching the adhesive tape (4) and the bottom graphene layer (2) from the copper foil (3) via the application of heat, from 1°C up to 5°C higher than the release temperature of the adhesive tape (4) so that the adhesive layer (4) with the bottom graphene layer (2) can be removed, obtaining a metal foil (3) with a top graphene layer (2) sample, and
      - transfer the top graphene layer (1) onto a substrate (6) via a sacrificial protective layer (5).
    • 一种通过CVD石墨烯合成在绝缘基板上制造石墨烯单层的方法,其中通过以下步骤获得具有顶部石墨烯层(1)和底部石墨烯层(2)的金属箔(3)催化剂: - 应用 通过辊在CVD石墨烯合成中沉积在金属箔(3)的底部的底部石墨烯层(2)的粘合带(4), - 分离粘合带(4)和底部石墨烯层(2) 通过施加热量从铜箔(3)上升到高于粘合带(4)的释放温度的1℃至5℃,使得具有底部石墨烯层(2)的粘合剂层(4) 可以去除,获得具有顶部石墨烯层(2)样品的金属箔(3),以及 - 经由牺牲保护层(5)将顶部石墨烯层(1)转移到基底(6)上。