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1. 发明授权

EP1247292B1 METHOD OF FORMING COPPER INTERCONNECTIONS AND THIN FILMS USING CHEMICAL VAPOR DEPOSITION WITH CATALYST 有权
标题翻译：法生产铜中间体化合物和薄膜BY CVD和催化剂
公开(公告)号：EP1247292B1
公开(公告)日：2009-02-04
申请号：EP00983564.6
申请日：2000-12-15
申请人： Genitech Co., Ltd.
发明人： Koh, Won Yong , Park, Hyung Sang , Lee, Ji Hwa
IPC分类号： H01L21/285 , C23C16/44 , C23C16/06
CPC分类号： H01L21/76873 , C23C16/02 , C23C16/045 , C23C16/44 , H01L21/76802 , H01L21/7684 , H01L21/76877 , H01L21/76885 , H01L23/53238 , H01L24/02 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01057 , H01L2924/01073 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/351 , H01L2924/00
摘要： A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition (CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing (CMP) process need not be used.

2. 发明授权

EP1038047B1 CHEMICAL DEPOSITION METHOD USING CATALYST ON SURFACE 有权
标题翻译：化工涂料过程中使用催化剂在表面
公开(公告)号：EP1038047B1
公开(公告)日：2002-07-03
申请号：EP99944883.0
申请日：1999-09-11
申请人： Genitech Co., Ltd.
发明人： LEE, Ji-Hwa , HWANG, Eui-Seong
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/44 , C23C16/18

3. 发明授权

EP1038048B1 GAS FEEDING SYSTEM FOR CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：供气为CVD反应器和控制方法
公开(公告)号：EP1038048B1
公开(公告)日：2003-01-15
申请号：EP99947980.1
申请日：1999-09-14
申请人： Genitech Co., Ltd.
发明人： LEE, Kyu-Hong , KANG, Won-Gu , KANG, Sang-Won
IPC分类号： C23C16/52
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/455 , C30B25/14
摘要： The present invention relates to a gas feeding system, and more particularly, to a gas feeding system for chemical vapor deposition (CVD) reactor capable of improving the uniformity and quality of deposited film in the manufacture of semiconductor devices. The present invention also relates to a method of controlling the same which prevents the waste of reactant source. The gas feeding system of the present invention preferably comprises a plurality of reactant source supply apparatuses, each being connected to the reactor to supply different reactant sources therein discontinuously or sequentially. Each reactant source supply apparatus includes a pass valve to prevent the waste of non-use reactant sources.

4. 发明公开

EP1454347A4 METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：作者：教育薄膜的方法
公开(公告)号：EP1454347A4
公开(公告)日：2012-03-28
申请号：EP02788928
申请日：2002-11-08
申请人： GENITECH CO LTD
发明人： KOH WON-YONG , LEE CHOON-SOO
IPC分类号： C23C16/44 , H01L21/205 , C23C16/455 , C23C16/515 , H01L21/285 , H01L21/316
CPC分类号： C23C16/515 , C23C16/45531 , C23C16/45536 , C23C16/45542

5. 发明公开

EP1466352A4 METHOD OF FORMING COPPER INTERCONNECTIONS FOR SEMICONDUCTOR INTEGRATED CIRCUITS ON A SUBSTRATE 审中-公开
标题翻译：方法铜化合物为一体的半导体电路的一个基板制作
公开(公告)号：EP1466352A4
公开(公告)日：2005-04-06
申请号：EP02793547
申请日：2002-12-28
申请人： GENITECH CO LTD
发明人： PARK HYUNG-SANG , KANG SANG-WON
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate by forming a barrier layer or an adhesion layer or both having excellent adhesion property is disclosed. Ruthenium (Ru) and ruthenium alloys, and rhenium (Re) and rhenium alloys are proposed to use according to the present invention. Other metals proposed to use include nickel (Ni), platinum (Pt), osmium (Os), iridium (Ir) and their alloys, respectively.

6. 发明公开

EP1247292A1 METHOD OF FORMING COPPER INTERCONNECTIONS AND THIN FILMS USING CHEMICAL VAPOR DEPOSITION WITH CATALYST 有权
标题翻译：法生产铜中间体化合物和薄膜BY CVD和催化剂
公开(公告)号：EP1247292A1
公开(公告)日：2002-10-09
申请号：EP00983564.6
申请日：2000-12-15
申请人： Genitech Co., Ltd.
发明人： Koh, Won Yong , Park, Hyung Sang , Lee, Ji Hwa
IPC分类号： H01L21/285 , C23C16/44 , C23C16/06
CPC分类号： H01L21/76873 , C23C16/02 , C23C16/045 , C23C16/44 , H01L21/76802 , H01L21/7684 , H01L21/76877 , H01L21/76885 , H01L23/53238 , H01L24/02 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01057 , H01L2924/01073 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/351 , H01L2924/00
摘要： A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition (CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing (CMP) process need not be used.

7. 发明公开

EP1038048A2 GAS FEEDING SYSTEM FOR CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：供气为CVD反应器和控制方法
公开(公告)号：EP1038048A2
公开(公告)日：2000-09-27
申请号：EP99947980.1
申请日：1999-09-14
申请人： Genitech Co., Ltd.
发明人： LEE, Kyu-Hong , KANG, Won-Gu , KANG, Sang-Won
IPC分类号： C23C16/52
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/455 , C30B25/14
摘要： The present invention relates to a gas feeding system, and more particularly, to a gas feeding system for chemical vapor deposition (CVD) reactor capable of improving the uniformity and quality of deposited film in the manufacture of semiconductor devices. The present invention also relates to a method of controlling the same which prevents the waste of reactant source. The gas feeding system of the present invention preferably comprises a plurality of reactant source supply apparatuses, each being connected to the reactor to supply different reactant sources therein discontinuously or sequentially. Each reactant source supply apparatus includes a pass valve to prevent the waste of non-use reactant sources.

8. 发明公开

EP1454347A1 METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：作者：教育薄膜的方法
公开(公告)号：EP1454347A1
公开(公告)日：2004-09-08
申请号：EP02788928.6
申请日：2002-11-08
申请人： Genitech Co., Ltd.
发明人： KOH, Won-Yong,105-605 Hanul Apt. , LEE, Choon-Soo,113-402 Hanmaeul Apt., 200-4
IPC分类号： H01L21/205
CPC分类号： C23C16/515 , C23C16/45531 , C23C16/45536 , C23C16/45542
摘要： Method for forming a thin film at low temperature by using plasma pulses is disclosed. According to the present invention, while a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, thereby a thin film is formed according to the method described above and disclosed here. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle,---, and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a Is supercycle Tupercycle comprising a combination of simple gas supply cycles Tcycle,---, are disclosed. According to the present invention, the methods for forming thin films disclosed here allows to shorten the purge cycle duration even if the reactivity between the source gases is high, to reduce the contaminants caused by the gas remaining in the reactor, to form a thin film at low temperature even if the reactivity between the source gases is low, and also to increase the rate of thin film formation.

9. 发明公开

EP1421606A1 PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) EQUIPMENT AND METHOD OF FORMING A CONDUCTING THIN FILM USING THE SAME THEREOF 审中-公开
标题翻译：设备技术等离子体增强原子层矿床（PEALD）和方法形成薄的导电膜，以确保
公开(公告)号：EP1421606A1
公开(公告)日：2004-05-26
申请号：EP01957017.5
申请日：2001-08-06
申请人： Genitech Co., Ltd.
发明人： LEE, Chun-Soo , OH, Min-Sub , PARK, Hyung-Sang
IPC分类号： H01L21/20
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45508 , C23C16/45519 , C23C16/4554 , C23C16/45565 , C23C16/45591 , C23C16/50 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/28562 , H01L21/3141 , H01L21/318
摘要： A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.

10. 发明公开

EP1038047A1 CHEMICAL DEPOSITION METHOD USING CATALYST ON SURFACE 有权
标题翻译：化工涂料过程中使用催化剂在表面
公开(公告)号：EP1038047A1
公开(公告)日：2000-09-27
申请号：EP99944883.0
申请日：1999-09-11
申请人： Genitech Co., Ltd.
发明人： LEE, Ji-Hwa , HWANG, Eui-Seong
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/44 , C23C16/18
摘要： A method of chemically depositing a film in which a catalyst component is employed to enhance the deposition rate. The present invention is characterized in that a catalyst component is not buried under the film to be deposited but moved onto the surface of the film during the deposition to facilitate the surface deposition reaction of gas phase deposition sources. According to the present invention, a deposition film having superior step coverage and high deposition rate can be obtained.

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