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1. 发明公开

EP3264442A1 BIAS CORRECTION FOR LITHOGRAPHY 有权
标题翻译：光刻的偏差校正
公开(公告)号：EP3264442A1
公开(公告)日：2018-01-03
申请号：EP17178472.1
申请日：2017-06-28
申请人： D2S, Inc.
发明人： ZABLE, Harold Robert
IPC分类号： H01J37/302 , H01J37/317 , G03F1/78 , G03F1/70 , G03F1/36 , G03F7/20
摘要： Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.
摘要翻译：方法包括输入像素阵列，其中像素阵列中的每个像素具有像素剂量。像素阵列表示要用多个图案曝光的表面上的剂量，多个图案中的每个图案具有边缘。目标偏差是输入。识别多个图案中的图案的边缘。对于在所识别的边缘附近的每个像素，计算所计算的像素剂量，使得所识别的边缘由目标偏差重新定位。输出具有计算的像素剂量的像素阵列。还公开了用于执行该方法的系统。

2. 发明公开

EP2724197A1 METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：方法和系统模式的生产中使用承载器射线光刻
公开(公告)号：EP2724197A1
公开(公告)日：2014-04-30
申请号：EP12804558.0
申请日：2012-06-19
申请人： D2S, Inc.
发明人： FUJIMURA, Akira , BORK, Ingo
IPC分类号： G03F1/20 , H01L21/027
CPC分类号： G03F7/2037 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/78 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776 , H01L21/027 , Y10S430/143
摘要： In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (ß
f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
f expands the process window for the charged particle beam lithography process.
摘要翻译：在用于打碎或掩模数据准备或掩模工艺校正带电粒子束光刻的方法，拍摄的多元性是确定性的开采thatwill形式的表面，其中，镜头是确定性的开采，以减少所产生的图案的灵敏度的变化上的图案波束模糊（测试版F）。至少在镜头的多元性一些镜头重叠其他射击。在一些实施方案中，β-f由在镜头的多元性控制拍摄的重叠量减少，要么在初始拍摄的确定，或在后处理步骤。于βf显示降低的灵敏度扩展用于带电粒子束光刻工艺的工艺窗口。

3. 发明公开

EP2321701A2 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY 审中-公开
标题翻译：方法光学邻近校正设计及制造字符投影光刻线程CROSS生产资料
公开(公告)号：EP2321701A2
公开(公告)日：2011-05-18
申请号：EP09810440.9
申请日：2009-08-10
申请人： D2S, Inc.
发明人： FUJIMURA, Akira , GLASSER, Lance , MITSUHASHI, Takashi , HAGIWARA, Kazuyuki
IPC分类号： G03F7/20 , H01L21/027 , G03F1/16
CPC分类号： G03F7/2037 , B82Y10/00 , B82Y40/00 , G03F1/68 , H01J37/3174
摘要： A method and system for manufacturing a surface having a multiplicity of slightly different patterns is disclosed. The method comprises using a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. Application of such a method to fracturing, mask data preparation, or proximity effect correct is also disclosed. A method for optical proximity correction of a design of a pattern on a surface is also disclosed, comprising inputting desired patterns for the substrate and inputting a set of characters, some of which are complex characters, that may be used to form the pattern on the surface. A method of creating glyphs is also disclosed.
摘要翻译：一种用于制造具有大量微小差别图案的多个表面的方法和系统游离缺失盘。该方法包括使用具有一组字符的表面上形成图案和通过使用字符改变技术的减少拍数或总写入时间模板掩模。寻求压裂，掩模数据准备，或邻近效应正确gibt游离缺失盘的方法中的应用。包括输入希望的图形的基板和输入一组字符，其中的一些是复杂字符，也可使用一种用于在表面gibt盘上的图案游离缺失，的设计的光学邻近校正的方法，以在该图案表面。创建字形gibt游离缺失盘的方法。

4. 发明授权

EP2321840B1 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY 有权
标题翻译： VERFAHREN ZUR KORREKTUR VON OPTISCHEN NAHEFFEKTEN，ENTWURF UND HERSTELLUNG EINES RETIKELS MITTELS LITHOGRAPHIE MIT UNTERSCHIEDLICH GEFORMTEN STRAHLEN
公开(公告)号：EP2321840B1
公开(公告)日：2017-05-03
申请号：EP09810441
申请日：2009-08-10
申请人： D2S INC
发明人： FUJIMURA AKIRA , GLASSER LANCE
IPC分类号： H01L21/027 , G03F1/36 , G03F1/78 , G03F7/20 , H01J37/317 , H01J37/34
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/36 , G03F1/68 , G03F1/78 , H01J37/3174

5. 发明公开

EP2681760A4 METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：方法和系统模式的生产中使用承载器射线光刻
公开(公告)号：EP2681760A4
公开(公告)日：2016-12-07
申请号：EP12751849
申请日：2012-02-15
申请人： D2S INC
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01J37/302 , B82Y10/00 , B82Y40/00 , H01J37/317
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776

6. 发明公开

EP2321840A4 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY 有权
标题翻译：方法用不同形状的束光刻光学邻近校正与设计和制造一个线程交叉的
公开(公告)号：EP2321840A4
公开(公告)日：2015-12-16
申请号：EP09810441
申请日：2009-08-10
申请人： D2S INC
发明人： FUJIMURA AKIRA , GLASSER LANCE
IPC分类号： H01L21/027 , G03F1/36 , G03F1/78 , G03F7/20 , H01J37/317 , H01J37/34
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/36 , G03F1/68 , G03F1/78 , H01J37/3174

7. 发明公开

EP2302659A3 Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography 审中-公开
$Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography$
标题翻译：一种用于通过折射和弯曲刻度Teilchenstrahllithographie来生产图案处理
公开(公告)号：EP2302659A3
公开(公告)日：2011-05-25
申请号：EP10173794.8
申请日：2010-08-24
申请人： D2S, Inc.
发明人： Fujimura, Akira , Tucker, Michael
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/2061 , G06F17/5045 , H01J37/3026 , H01J37/3174 , Y10S430/143
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
摘要翻译：在半导体制造领域中使用成形带电粒子束光刻的方法和系统，用于打碎或掩模数据准备或邻近效应校正的光盘游离缺失，worin一系列曲线字符投影镜头是确定性的开采的带电粒子束写入系统，检查的确这组发射的能形成连续的轨迹，可能的变化的宽度，在表面上。一种用于使用一系列曲线字符投影发射gibt游离缺失盘的表面上形成一个连续的轨道的方法。用于制造光罩和用于制造基片的方法：例如通过形成使用一系列的曲线字符投影发射gibt游离缺失盘的表面上的连续轨道的硅晶片。

8. 发明公开

EP4374282A2 METHODS AND SYSTEMS TO DETERMINE PARASITICS FOR SEMICONDUCTOR OR FLAT PANEL DISPLAY FABRICATION 审中-实审
公开(公告)号：EP4374282A2
公开(公告)日：2024-05-29
申请号：EP22846538.1
申请日：2022-07-19
申请人： D2S, Inc.
发明人： FUJIMURA, Akira , SHIRALI, Nagesh , ORIORDAN, Donald
IPC分类号： G06F30/27 , G06F30/392 , G06F30/398
CPC分类号： G06F30/27 , G06F30/398 , G06F2119/1020200101 , G06N3/0464 , G06N3/084 , G06N3/048

9. 发明公开

EP2724197A4 METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：方法和系统模式的生产中使用承载器射线光刻
公开(公告)号：EP2724197A4
公开(公告)日：2015-08-26
申请号：EP12804558
申请日：2012-06-19
申请人： D2S INC
发明人： FUJIMURA AKIRA , BORK INGO
IPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , G03F1/78 , G03F7/20 , H01J37/317 , H01L21/027
CPC分类号： G03F7/2037 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/78 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776 , H01L21/027 , Y10S430/143

10. 发明公开

EP2758986A4 METHOD AND SYSTEM FOR OPTIMIZATION OF AN IMAGE ON A SUBSTRATE TO BE MANUFACTURED USING OPTICAL LITHOGRAPHY 审中-公开
标题翻译：方法和系统用于优化图像的光学光刻技术的手段来完成ENDS衬底
公开(公告)号：EP2758986A4
公开(公告)日：2015-08-19
申请号：EP12833285
申请日：2012-09-10
申请人： D2S INC
发明人： FUJIMURA AKIRA
IPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/78 , G03F7/20 , H01J37/317 , H01L21/027
CPC分类号： G03F1/36 , G03F7/70441 , G03F7/705 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776

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