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1. 发明公开

EP1937867A4 DEPOSITION APPARATUS FOR THE FORMATION OF POLYCRYSTALLINE MATERIALS ON MOBILE SUBSTRATES 审中-公开
标题翻译：分离装置多晶材料对移动基底的形成
公开(公告)号：EP1937867A4
公开(公告)日：2009-07-29
申请号：EP06800301
申请日：2006-07-25
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R
IPC分类号： C23C16/00 , C23C16/24 , C23C16/54
CPC分类号： C23C16/545 , C23C16/24 , H01L27/1214 , H01L29/78603
摘要： A deposition apparatus and method for continuously depositing a polycrystalline material such as polysilicon or polycrystalline SiGe layer on a mobile discrete or continuous web substrate. The apparatus includes a pay-out unit for dispensing a discrete or continuous web substrate and a deposition unit that receives the discrete or continuous web substrate and deposits a series of one or more thin film layers thereon in a series of one or more deposition or processing chambers. In a preferred embodiment, polysilicon is formed by first depositing a layer of amorphous or microcrystalline silicon using PECVD and transforming said layer to polysilicon through heating or annealing with one or more lasers, lamps, furnaces or other heat sources. Laser annealing utilizing a pulsed excimer is a preferred embodiment. By controlling the processing temperature, temperature distribution within a layer of amorphous or microcrystalline silicon etc., the instant deposition apparatus affords control over the grain size of polysilicon. Passivation of polysilicon occur through treatment with a hydrogen plasma. Layers of polycrystalline SiGe may similarly be formed. The instant deposition apparatus provides for the continuous deposition of electronic devices and structures that include a layer of a polycrystalline material such as polysilicon and/or polycrystalline SiGe. Representative devices include photovoltaic devices and thin film transistors. The instant deposition apparatus also provides for the continuous deposition of chalcogenide switching or memory materials alone or in combination with other metal, insulating, and/or semiconducting layers.

2. 发明授权

EP1275129B1 E-BEAM/MICROWAVE GAS JET PECVD METHOD AND APPARATUS FOR DEPOSITING AND/OR SURFACE MODIFICATION OF THIN FILM MATERIALS 有权
标题翻译：电子/ MIKROWELLENGASJET PECVD方法和装置用于存储和/或修改薄膜材料表面的
公开(公告)号：EP1275129B1
公开(公告)日：2008-09-24
申请号：EP00921342.2
申请日：2000-02-22
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： IZU, Masatsugu , DOEHLER, Joachim , JONES, Scott
IPC分类号： H01J7/24 , C23C16/513 , C23C16/517 , C23C16/54 , C23C16/24
CPC分类号： C23C16/513 , C23C16/517
摘要： A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave (5) and e-beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reacting species to the plasma. This gas jet system (3) allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.

3. 发明公开

EP1714288A2 SECURED PHASE-CHANGE DEVICES 审中-公开
标题翻译： SECURED相变化的内容
公开(公告)号：EP1714288A2
公开(公告)日：2006-10-25
申请号：EP05713091.6
申请日：2005-02-08
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： OVSHINSKY, Stanford, R. , COHEN, Morrel, H.
IPC分类号： G11C11/00
CPC分类号： G11C7/24 , G11C13/0004 , G11C13/003 , G11C13/0059 , G11C2213/75 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： An electronic device for securing the contents of data storage and processing elements. The device includes a security element and a phase-change element connected in a parallel arrangement. The security element is a three-terminal device, such as a conventional transistor or three-terminal phase-change device, having an ON state and an OFF state which differ with respect to resistance and regulate electronic access to the phase-change element by controlling the flow of electrical current applied to the parallel combination. In the ON state, the resistance of the security element is less than that of the phase-change element, thereby preventing, inhibiting or confusion a determination of the resistance of the phase-change element. In this PROTECT mode, the contents of the phase-change element are secured. In the OFF state, the resistance of the security element is greater than that of the phase-change material so that the resistance of the parallel combination approaches that of the phase-change element. In this READ mode, the resistance and information content of the phase-change element can be determined. The phase-change element includes a phase-change material and is preferably a chalcogenide based element. The phase-change element may perform a storage or processing function and includes registers and weighting devices as preferred embodiments.

4. 发明公开

EP1691918A2 CATALYSTS AND HYDROGEN STORAGE MATERIALS EXHIBITING QUANTUM EFFECTS 审中-公开
标题翻译：催化剂和氢存储材料量子效应SHOW
公开(公告)号：EP1691918A2
公开(公告)日：2006-08-23
申请号：EP04813598.2
申请日：2004-12-09
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： OVSHINSKY, Stanford, R.
IPC分类号： B01J21/18 , B01J23/00 , B01J23/02 , B01J23/06 , B01J23/40 , B01J23/42 , B01J23/58 , C22C30/00 , C22C30/02 , C22C30/04 , C01B6/24
CPC分类号： B01J35/002 , B01J23/02 , B01J23/22 , B01J23/74 , B01J23/745 , B01J23/75 , B01J35/0013 , B01J35/006 , B01J37/086 , B01J37/343 , C01B3/0026 , C01B3/0031 , Y02E60/327
摘要： Catalysts, supported catalysts and hydrogen storage materials exhibiting quantum effects. The disclosed quantum limit catalyst is comprised of atomic aggregations whose dimensions correspond to the quantum limit. The structural configurations possible in the quantum limit correspond to atomic aggregations having bond lengths, bond angles, topologies and coordination environments that differ from those found in the macroscopic limit. The modifications in election density and wavefunction characteristics (overlap and directionality) achieved in the quantum limit provide, in effect, 'new' or 'virtual' chemical elements whose structure and bonding deviate from those associated with the 'standard' chemical elements of conventional materials. A catalyst including a catalytic phase supported by an electronically active support matrix is further disclosed. An electronic interaction that occurs between the catalytic phase and support matrix leads to perturbations in the magnitude and/or spatial distribution of electron density at or near the surface of the catalytic phase. The electronic interaction originates from an overlap of wavefunctions associated with electron density of the catalytic phase with wavefunctions associated with electron density of the catalytic phase. Embodiments include those in which the electronic interaction is of the bonding-type, anti-bonding type or donor-acceptor type. Filled, partially filled or unoccupied orbital states may participate in the electronic interaction. The perturbation in electron density induced by the electronic interaction modifies the catalytic properties of the catalytic phase.

5. 发明公开

EP1634105A2 METHOD OF MELT-FORMING OPTICAL DISK SUBSTRATES 审中-公开
标题翻译：方法熔化成型光盘基板
公开(公告)号：EP1634105A2
公开(公告)日：2006-03-15
申请号：EP04776132.5
申请日：2004-05-27
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： HENNESSEY, Michael , GUTMAN, George , STRAND, David , CLARK, Barry
IPC分类号： G02B1/00
CPC分类号： B29C59/022 , B29C43/00 , B29C43/021 , B29C59/026 , B29C59/04 , B29C2035/0811 , B29C2043/025 , B29C2059/023 , B29K2105/256 , B29L2017/00 , B29L2017/005
摘要： The present invention provides a method for the continuous manufacturing of optical memory or optical memory substrates, and/or optical disks, which includes supplying a web of polymeric material between two mating platens, melt-forn-xing at least one microform image, such as an information track structure for an optical device, into the web with a substantially flat stamper, heating a substantial portion of the melt formed cross section of the web of polymeric material to the melt flow temperature (Tf) of the polymeric material. The invention discloses several embodiments for melt-forming an information structure and depositing several layers onto information structure to produce an optical memory device.

6. 发明公开

EP1237786A4 HYDROGEN-BASED ECOSYSTEM 有权
标题翻译： EIN AUF WASSERSTOFF基地ÖKOSYSTEM
公开(公告)号：EP1237786A4
公开(公告)日：2005-11-30
申请号：EP00990911
申请日：2000-11-14
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R , YOUNG ROSA T
IPC分类号： C22C1/00 , B22F1/00 , B22F9/00 , B32B15/01 , C01B3/00 , C01B3/02 , C01B3/38 , C01B3/56 , C22C1/04 , C22C22/00 , C22C23/00 , C22C23/02 , C22C23/06 , C25B1/04 , F17C11/00 , F25B17/12 , H01L31/04 , H01M4/38 , H01M4/46 , H01M8/00 , H01M8/04 , H01M8/06 , B65B31/00
CPC分类号： H01M8/065 , B22F1/0096 , B22F9/008 , B22F2009/041 , B22F2998/00 , B22F2998/10 , B32B15/01 , C01B3/0005 , C01B3/0031 , C01B3/0057 , C01B3/0084 , C01B3/38 , C01B2203/0233 , C01B2203/0261 , C01B2203/0805 , C01B2203/085 , C01B2203/84 , C22C1/04 , C22C1/0408 , C22C22/00 , C22C23/00 , C22C23/02 , C22C23/06 , F17C11/005 , F17C2203/0648 , F17C2221/012 , F17C2260/046 , F17C2270/0184 , H01M4/383 , H01M4/46 , H01M8/04014 , H01M8/0662 , Y02E10/34 , Y02E60/321 , Y02E60/327 , Y02E60/366 , Y02P20/129 , Y02P20/133 , Y02P20/134 , Y02P90/45 , B22F9/082 , B22F9/04 , B22F9/023
摘要： A complete infrastructure system for the generation (32), storage (34) transportation (35), and delivery (36) of hydrogen which makes a hydrogen ecosystem possible. The infrastructure system utilizes high capacity, low cost, light weight thermal hydrogen storage alloy materials (42) having fast kinetics. Also, a novel hydrogen storage bed design which includes a support/heat-transfer component (41) which is made from a highly porous, high thermal conductivity, solid material such as a high thermal conductivity graphitic foam. Finally a material including at least one particle having atomically engineered local chemical and electronic environments, characterized in that the local environments providing bulk nucleation.
摘要翻译：一种能够储存和释放氢的储氢床，包括：储氢合金材料; 具有高孔隙率和高导热性的固体支撑装置，其中所述固体支撑装置将所述储氢合金材料保持在固定位置; 多个氢气流通道，其被配置为：1）在其中储存氢气期间将氢气输送到所述储氢合金材料中并将热能输送出所述储氢合金材料; 和2）在从其中释放氢气期间将氢气和热能输送到所述储存合金材料中。

7. 发明公开

EP1243041A4 MODIFIED MAGNESIUM BASED HYDROGEN STORAGE ALLOYS 有权
标题翻译：修改于镁基合金储氢
公开(公告)号：EP1243041A4
公开(公告)日：2005-08-10
申请号：EP00979211
申请日：2000-11-20
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R , YOUNG ROSA T
IPC分类号： F17C11/00 , C01B3/00 , C22C1/04 , C22C23/00 , C22C23/06 , H01M4/38 , H01M4/46 , H01M8/04 , H01M8/06
CPC分类号： C01B3/0031 , B22F2998/00 , C01B3/0047 , C22C1/0408 , C22C23/00 , C22C23/06 , H01M4/383 , H01M4/46 , H01M8/065 , Y02E60/327 , Y10S420/90 , B22F9/10
摘要： A magnesium based hydrogen storage alloy powder which is useful as a hydrogen supply material for powering internal combustion engine or fuel cell vehicles. The alloy contains greater than about 85 atomic percent magnesium, about 2-8 atomic percent nickel, about 0.5-5 atomic percent aluminum and about 2-7 atomic percent rare earth metals or mixtures of rare earth metals. The rare earth elements may be Misch metal and may predominantly contain Ce and/or La. The alloy may also contain about 0.5-5 atomic percent silicon. The alloys can be modified to store more than 4 wt.%, preferably more than 4.5 wt.%, most preferably more than 5 wt.% hydrogen, with a reduced hydride bond strength (i.e. about 64 kJ/mole) which allows for economic recovery of the stored hydrogen. Also, they have a plateau pressure about two times greater than pure Mg and comparable bond energies and plateau pressures to Mg2Ni alloys, while reducing the amount of incorporated nickel by 25-30 atomic %. This reduced nickel content greatly reduces cost of the alloy. Also, while the kinetics of the alloy are improved over pure Mg, the storage capacity of the alloy is significantly greater than the 3.6 wt.% of Mg2Ni material.

8. 发明授权

EP0843901B1 ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROM 失效
标题翻译：电可擦除可擦写立即多关单细胞和现有的内存记忆由此制成MATRIX
公开(公告)号：EP0843901B1
公开(公告)日：2004-12-08
申请号：EP96924647.9
申请日：1996-07-19
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： KLERSY, Patrick, J. , STRAND, David, A. , OVSHINSKY, Stanford, R.
IPC分类号： H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/04 , G11C2213/72 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/144
摘要： An electrically operated memory element (30) includes a volume of memory material (36) characterized by: a large dynamic range of electrical resistance values; and the ability of at least a filamentary portion to be set, by the selected electrical signal to any resistance value in the dynamic range, regardless of the previous resistance value of the material so as to provide a single cell with multibit storage capabilities. The memory element (30) also includes a pair of contacts (6, 8) including 1) a thin-film layer (34, 38), preferably titanium carbonitride or titanium siliconitride, disposed adjacent to the memory material (36), used as a diffusion barrier to inhibit foreign material from entering the memory material (36), and 2) a thin-film layer (32, 40), preferably a Ti-W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.

9. 发明公开

EP1476693A1 VANE HEAT TRANSFER STRUCTURE 审中-公开
标题翻译：铲传热设计
公开(公告)号：EP1476693A1
公开(公告)日：2004-11-17
申请号：EP03743121.0
申请日：2003-02-06
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： STETSON, Ned, T. , MARCHIO, Michael , HOLLAND, Arthur , ALPER, Daniel , GORMAN, David , Yang, Jun
IPC分类号： F17C11/00
CPC分类号： F17C11/005 , F17C2201/0104 , F17C2201/0166 , F17C2203/035 , F17C2203/0646 , F17C2203/0648 , F17C2221/012 , F17C2223/0123 , F17C2260/031 , F28D2021/0047 , F28F13/00 , Y02E60/321 , Y02E60/327 , Y10S420/90
摘要： A hydrogen storage unit which uses hydrogen storage alloys (10) to store hydrogen, and more particularly a heat transfer management/compartmentalization system for use in such a system. The hydrogen storage alloy may be divided into compartments, separated by disks (13), further divided into subcompartments by a flapper wheel. The disks (13) and flapper wheel provide for optimal heat transfer throughout the system. The compartmentalization of the vessel may prevent compaction of the hydrogen storage alloys, which could lead to excessive strain on the vessel causing damage, deformation, or rupture of the vessel.

10. 发明授权

EP0871385B1 ROBUST METAL HYDRIDE HYDROGEN STORAGE SYSTEM 失效
标题翻译：坚固的金属氢贮存系统，制氢
公开(公告)号：EP0871385B1
公开(公告)日：2004-05-12
申请号：EP96942859.8
申请日：1996-12-05
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： SAPRU, Krishna , VENKATESAN, Srinivasan , STETSON, Ned, T. , RANGASWAMY, Krishnaswamy
IPC分类号： A47G19/00 , F17C11/00 , F17C3/00 , B65D6/28 , B65D21/00
CPC分类号： F17C1/00 , F17C11/00 , Y02E60/321 , Y02E60/327
摘要： A modular metal hydride hydrogen storage system which can provide a robust and reliable source of hydrogen that can quickly and easily be modified for a variety of applications and environments. The hydrogen strorage system comprises at least one storage module (1). Each storage module comprises a container for storing metal hydride and gaseous hydrogen, and an adaptor (30) for connecting storage modules together end-to-end to form a connected sequence of storage modules.

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