专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

EP0697756B1 A semiconductor laser device and a method for producing the same 失效
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP0697756B1
公开(公告)日：2001-12-12
申请号：EP95117077.8
申请日：1991-09-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto,Mitsuhiro , Kazuaki, Sasaki , Kondo,Masaki , Takeoka,Tadashi , Nakatsu,Hiroshi , Watanabe,Masanori , Yamamoto,Osamu , Yamamoto,Saburo
IPC分类号： H01S5/10 , H01S5/02 , H01L33/00
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325 , H01S2301/18

82. 发明公开

EP1130726A2 Distributed feedback semiconductor laser device and multi-wavelength laser array 审中-公开
标题翻译： Halbleiterlaservorrichtung mit verteilterRückkopplungundMehrwellenlängenvielfachlaser
公开(公告)号：EP1130726A2
公开(公告)日：2001-09-05
申请号：EP01101737.3
申请日：2001-01-25
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Kasukawa, Akihiro, c/o The Furukawa Electric Co. , Iwai, Norihiro, c/o The Furukawa Electric Co., Ltd , Funabashi, Masaki, c/o The Furukawa Electric Co.
IPC分类号： H01S5/40 , H01S5/12
CPC分类号： H01S5/12 , H01S5/2215 , H01S5/222 , H01S5/4031 , H01S5/4087
摘要： A distributed feedback semiconductor laser device including an active layer (18), a diffraction grating disposed in a vicinity of the active layer (18) and having a substantially uniform space period and a distributed feedback function, and a functional layer (28a and 32) disposed in a vicinity of the diffraction grating and the active layer (18) and having a function of controlling a refractive index of the active layer (18), whereby the functional layer controls a lasing wavelength of the active layer (18). The functional layer of controlling the refractive index of the distributed feedback semiconductor laser device can generate a plurality of the lasing wavelengths different among one another and easily controllable.
摘要翻译：一种分布式反馈半导体激光器件，包括有源层（18），设置在有源层（18）附近并且具有基本均匀的空间周期和分布反馈功能的衍射光栅以及功能层（28a和32）设置在衍射光栅和有源层（18）附近，并且具有控制有源层（18）的折射率的功能，由此功能层控制有源层（18）的激光波长。控制分布式反馈半导体激光器件的折射率的功能层可以产生彼此不同的多个激光波长并且易于控制。

83. 发明公开

EP1104059A2 Structure and method for index-guided inner stripe laser diode structure 有权
标题翻译：结构和方法，用于折射率导引内条纹激光二极管
公开(公告)号：EP1104059A2
公开(公告)日：2001-05-30
申请号：EP00309746.6
申请日：2000-11-03
申请人： Xerox Corporation
发明人： Kneissl, Michael A. , Bour, David P. , Romano, Linda T. , Krusor, Brent S. , Johnson, Noble M.
IPC分类号： H01S5/223
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.

85. 发明授权

EP0562769B1 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译：该表面发射半导体激光器具有改善的光学限制
公开(公告)号：EP0562769B1
公开(公告)日：1999-05-26
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222

86. 发明公开

EP0785602A1 A semiconductor laser and a method for producing the same 失效
标题翻译：一种半导体激光器及其制造方法
公开(公告)号：EP0785602A1
公开(公告)日：1997-07-23
申请号：EP97100683.8
申请日：1997-01-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Ikeda, Hiroaki , Ohbayashi, Ken
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2227 , H01S5/32316
摘要： A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type; an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
摘要翻译：根据本发明的半导体激光装置包括：具有第一导电类型的半导体衬底; 以及设置在所述半导体衬底上的半导体多层结构，所述半导体多层结构包括有源层。该半导体多层结构包括：设置在有源层下方的下覆层，下覆层具有第一导电类型; 设置在所述有源层上方的上覆层结构，所述上覆层结构具有第二导电类型; 以及设置在上部包层结构上方的盖层。在上部覆盖结构中形成脊，并且覆盖层的下表面的宽度大于脊的上表面的宽度。

87. 发明公开

EP0714558A1 RADIATION-EMITTING SEMICONDUCTOR INDEX-GUIDED DIODE 失效
标题翻译：指标指导的半导体发光二极管
公开(公告)号：EP0714558A1
公开(公告)日：1996-06-05
申请号：EP95917447.0
申请日：1995-05-19
申请人： Philips Electronics N.V.
发明人： SCHEMMANN, Marcel, Franz, Christian , VAN DER POEL, Carolus, Johannes , ACKET, Gerard, Adriaan
IPC分类号： H01L33 , H01S5
CPC分类号： H01L33/30 , H01S5/204 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/3215
摘要： The invention relates to a radiation-emitting semiconductor index-guided diode, especially a laser having a first (1) and a second (3) cladding layer, an active layer (2) and a mesa (20) which comprises at least the second cladding layer (3) and which lies recessed in a third cladding layer (4). In a diode according to the invention, the second cladding layer (3) comprises a first sub-layer (3A) which adjoints the active layer (2) and is comparatively thin, and a second sub-layer (3B) which adjoins the first sub-layer (3A) and is comparatively thick, while the refractive index of the first sub-layer (3A) is lower than that of the second sub-layer (3B). On the one hand the confinement in the thickness direction of charge carriers and radiation is good in such a diode. On the other hand, the third cladding layer (4) is allowed to have a comparatively high refractive index, so a comparatively low bandgap, and thus a comparatively low aluminium content, while nevertheless the lateral confinement of the radiation is good. Thus, the aluminium content of the third cladding layer (4) may be below 50 at.% or below 40 at.% in GaAs/AlGaAs or InGaAs/AlGaAs diodes, respectively, which cover the important wavelength range from 0.7 to 1 νm.

88. 发明公开

EP0664592A1 Semiconductor laser with AlInP or AlGaInP burying layer and fabrication method thereof 失效
标题翻译： Halbleiterlaser mit AlInP oder AlGaInP vergrabenes Schicht und Herstellungsverfahren。
公开(公告)号：EP0664592A1
公开(公告)日：1995-07-26
申请号：EP95300427.2
申请日：1995-01-24
申请人： NEC Corporation
发明人： Kobayashi, Ryuji, c/o NEC Corp. , Kobayashi, Kenichi, c/o NEC Corp. , Hotta, Hitoshi, c/o NEC Corp.
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/2209 , H01S5/221 , H01S5/222 , H01S5/32325 , H01S2304/04
摘要： A semiconductor laser having improved reliability. The laser contains an AIGalnP first cladding layer of a first conductivity type, an AIGalnP second cladding layer of a second conductivity type that forms a mesa stripe, an active layer made of an undoped GaInP layer, an undoped AlGaInP layer, or a quantum well layer of an undoped GaInP sublayer and an undoped AlGaInP sublayer. The laser further contains a burying layer made of an Al x In 1-x P or (Al y Ga 1- y ) x In 1-x P layer, which is placed at both sides of the mesa stripe to bury the stripe. The burying layer is larger in energy band gap than the active layer and smaller in refractive index than the second cladding layer. The burying layer has first regions that are contacted with and extend along respective side faces of the mesa stripe. An AI composition x of the first regions is set so that the first regions are lattice-matched to GaAs. The burying layer has second regions that are joined with respective bottom ends of the first regions and extend along the active layer. An AI composition x of the second regions is set so that the second regions are lattice-matched or are not lattice-matched to GaAs.
摘要翻译：一种提高可靠性的半导体激光器。激光器包括第一导电类型的AlGaInP第一包层，形成台面条的第二导电类型的AlGaInP第二包覆层，由未掺杂的GaInP层制成的有源层，未掺杂的AlGaInP层或量子阱层的未掺杂的GaInP子层和未掺杂的AlGaInP子层。激光还包含由AlxIn1-xP或（AlyGa1-y）xIn1-xP层制成的掩埋层，其被放置在台面条的两侧以埋置条纹。掩埋层的能带隙比有源层大，折射率小于第二覆层。掩埋层具有与台面条的相应侧面接触并延伸的第一区域。设置第一区域的Al组分x，使得第一区域与GaAs晶格匹配。掩埋层具有与第一区域的相应底端连接并沿着有源层延伸的第二区域。设置第二区域的Al组分x，使得第二区域晶格匹配或不与GaAs晶格匹配。

89. 发明公开

EP0562769A3 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译：具有增强光学约束的半导体表面发射激光
公开(公告)号：EP0562769A3
公开(公告)日：1993-12-22
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222
摘要： The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material (24A,24B) having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.

90. 发明公开

EP0562769A2 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译： OberflächenemittierenderHalbleiterlaser mit verbesserter optischer Begrenzung。
公开(公告)号：EP0562769A2
公开(公告)日：1993-09-29
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222
摘要： The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material (24A,24B) having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.
摘要翻译：本申请人已经发现，可以通过蚀刻掉期望的激光腔周围的生长层的部分并且再生周期性较小的材料的周边区域（24A，24B），可以制造具有增强的光学限制和改善的散热特性的表面发射激光器折射率比活性区域。使用低损伤蚀刻和原位再生长或氢等离子体清洁，然后再生长，可以制备具有增强的光学隔离和散热特性的表面发射激光器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式